• Journal of the Korean Institute of Telematics and Electronics
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• v.24 no.3
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• pp.453-458
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• 1987

Amorphous silicon thin-film transtors (TFT's) have been designed and fabricated on glass substrates. The hydrogenated amorphous silicon (a-Si:H) thin-film has been deposited by decomposing silane(SiH4) in hydorgen ambient by rf glow discharge method. Amorphous silicon nitride(a-Si:H) has been chosen as the gate dielectric material. It has been prepared by decomposing the mixed gas of silane(SiH4) and ammonia(NH3). The electrical properties and performance characteristics of the thin-film transistrs have been measured and compared with the requirements for the switching elements in liquid crystal flat panel display. The results show that liquid crystal flat panel displays can be fabricated using the thin-film transistors described in this paper.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.27 no.2
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• pp.188-196
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• 2003

Liquid-assisted cleaning technology utilizing a nanosecond laser pulse is effective for removing submicron particulates from a variety of solid substrates. In the technique, saturated vapor is condensed on a solid surface to form a thin liquid film and the film is evaporated explosively by laser heating. The present work studies the role of liquid-film evaporation in the cleaning process. First, optical interferometry is employed for in-situ monitoring the displacement of the laser-irradiated sample in the cleaning process. The experiments are performed for estimating the recoil force exerted on the target with and without liquid deposition. Secondly, time-resolved visualization and optical reflectance probing are also conducted for monitoring the phase-change kinetics and plume dynamics in vaporization of thin liquid layers. Discussions are made on the effect of liquid-film thickness and dynamics of plume and acoustic wave. The results confirm that cleaning force is generated when the bubble nuclei initially grow in the strongly superheated liquid.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.05a
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• pp.198-201
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• 2004

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of a SiO thin film. The homogenous alignment can be obtain어 using ion beam (IB) exposure on the SIO thin film, when positive type NLC ($Delta\varepsilon$>0) was injected However, the homeotropic alignment can be obtained using ion beam (IB) exposure on the SiO thin film, when negative type NLC ($\Delta\varepsilon$>0) was injected The LC aligning ability on the SiO thin film depends on the dielectric anisotropy type of LC. It will be discussed.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.460-463
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• 2005

We studied the nematic liquid crystal (NLC) alignment capability by the Ultraviolet (UV) alignment method on a a-C:H thin -film , and investigated electro-optical performances of the UV aligned twisted nematic (TN)- liquid crystal display (LCD) with the UV exposure on a-C:H thin film surface. A good LC alignment by UV irradiation on a a-C:H thin -film surface was achieved. Monodomain alignment of the UV aligned TN-LCD can be observed. The good electro-optical (EO)characteristics of the UV aligned TN-LCD was observed with oblique UV exposure on the a-C:H thin film surface for 1min.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.468-470
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.526-529
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• 2002

We studied the nematic liquid crystal (NLC) aligning capabilities by the UV alignment method on a diamond like carbon (DLC) thin film surface. A good LC alignment by UV exposure on the DLC thin film surface at $200\AA$ of layer thickness was achieved. Also, a good LC alignment by the UV alignment method on the DLC thin film surface was observed at annealing temperature of $180^{\circ}C$. However, the alignment defect of the NLC was observed above annealing temperature of $200^{\circ}C$. Consequently, the good thermal stability of LC alignment by the UV alignment method on the DLC thin film surface can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.66-67
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• 2006

We studied nematic liquid crystal (NLC) alignment effect on the $SiO_x$ thin film deposited $45^{\circ}$ oblique by rf magnetic sputtering system. Pretilt angle and thermal stability characteristic as well as NLC alignment effect were investigated. A uniform liquid crystal alignment effect on the $SiO_x$ thin film was achieved and pretilt angle was about $90^{\circ}$. The thermal stability of the $SiO_x$ thin film was sustained by $200^{\circ}$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.489-490
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• 2005

We studied the nematic liquid crystal (NLC) aligning capabilities using the new alignment material of the SiC (Silicon Carbide) thin film. The SiC thin film exhibits good chemical and thermal stability. The good thermal and chemical stability makes SiC an attractive candidate for electronic applications. A vertical alignment of nematic liquid crystal by ion beam exposure on the SiC thin film surface was achieved. The about $87^{\circ}$ of stable pretilt angle was achieved at the range from $30^{\circ}$ to $45^{\circ}$ of incident angle. The good LC alignment is main-tained by the ion beam alignment method on the SiC thin film surface at high annealing temperatures up to 300.

• Journal of Satellite, Information and Communications
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• v.10 no.2
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• pp.75-79
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• 2015

In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the ion beam alignment method on the a-C:H thin film. The suitable inorganic thin films for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film were studied. An excellent voltage-transmittance (V-T) and response time curve of the ion beam aligned FFS-LCD was observed with oblique ion beam exposure on the a-C:H thin films. Also, the V-T hysteresis characteristics of the ion beam-aligned FFS-LCD with IB exposure on the a-C:H thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide surface.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.171-171
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• 2007

Dysprosium-doped bismuth titanate (BDT) thin films were successfully deposited on Pt(111)/Ti/$SiO_2$/Si(100) substrates by liquid delivery MOCVD process and their structural and ferroelectric properties were characterized. Fabricated BDT thin films were found to be random orientations, which were confirmed by X-ray diffraction experiment and scanning electron microscope analysis. The crystallinity of the BDT films was improved and the average grain size increased as the crystallization temperature increased from 600 to $720^{\circ}C$ at an interval of $40^{\circ}C$. The BDT thin film annealed at $720^{\circ}C$ showed a large remanent polarization (2Pr) of $52.27\;{\mu}C/cm^2$ at an applied voltage of 5V. The BDT thin film exhibits a good fatigue resistance up to $1.0{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied pulse of ${\pm}5\;V$. These results indicate that the randomly oriented BDT thin film is a promising candidate among ferroelectric materials useti비 in lead-free nonvolatile ferroelectric random access memory applications.