• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.453-454
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• 2006

We studied the nematic liquid crystal (NLC) alignment capability by the IB(Ion bean) alignment method on a NDLC(Nitrogen Diamond Like Carbon) as a-C:H thin film. and investigated electro-optical performances of the IBaligned IPS(In plane switching)cell with NDLC surface. A good LC alignment by IB exposure on a NDLC surface was achieved. Monodomain alignment of the IB aligned IPS cell can be observed. The goodelectro-optical (EO) characteristics of the IB aligned IPS cell was observed with oblique IBexposure on the NDLC as a-C:H thin film for 1 min.

• Journal of the Korean Vacuum Society
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• v.2 no.4
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• pp.480-485
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• 1993

Factros considered building the magnetron sputtering system for TFT LCD (thin film transistor liquid crystal display0 metallization were thin film thichnes uniformity, temperature uniformity and the pressure gradient of sputtering gas flow in vacuum chamber, base pressure, and the stability fo the carrier moving . The system was consisted of a deposition chamber, a pre-heating chamber, a RF-precleaning chamber and a load/unload lock chamber. The system was designed to handle a substrate with dimension of 400$\times$400mm. The temperautre uniformity of a heater table developed showed $250 ^{\circ}C\pm$5% accuracyon the substrate glass. A base pressure of 1.8 $\times$10-7 torr was obtained after 24 hours pumping with a cryo pump. After an aluminum target was installed in a sputtering source and the film wa sdeposited on the glass, the uniformity, reflectivity and sheet resistance of the deposited film were measured.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.190-193
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• 2006

Gadolinium-substituted bismuth titanate, $Bi_{3.3}Gd_{0.7}Ti_{3}O_{12}$, thin films were successfully fabricated on Pt(111)/Ti/$SiO_2$/Si(100) substrates by a MOCVD process. Fabricated BGT thin films were found to be random oriental ions, which were confirmed by X-ray diffraction and scanning electron microscope analysis. The remanent polarization value ($2P_r$) of the BGT thin film annealed at $720^{\circ}C$ was $45.13{\mu}C/cm^2$, at an applied voltage of 5 V. The BGT thin film exhibits a good fatigue resistance up to $1{\times}10^{11}$ switching cycles at a frequency of 1 MHz with applied voltage of 5 V. These results indicate that the randomly oriented BGT thin film is a promising candidate among ferroelectric materials useful in lead-free nonvolatile ferroelectric random access memory applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.18 no.6
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• pp.477-485
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• 2006

A study on frost prevention of fin-tube heat exchanger is experimently performed by spreading antifreezing solution on heat exchanger surface. It is desirable that the antifreezing solution spreads completely on the surface forming thin liquid film to prevent frost nucleation and crystal growth and to reduce the thermal resistance across the liquid film. A small amount of antifreezing solution falls in drops on heat exchanger surface using two types of supplying devices, and a porous layer coating technique is adopted to enhance the wettedness of antifreezing solution on the surface. It is observed that the antifreezing solution liquid film prevents fin-tube heat exchanger from frosting, and heat transfer performance does not degrade through the frosting tests. The concentration of supplied antifreezing solution can be determined by heat transfer analysis of the first row of heat exchanger to avoid antifreezing solution freezing due to dilution by moisture absorption.

• Proceedings of the Materials Research Society of Korea Conference
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• 1999.11a
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• pp.88-88
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• 1999

• 한국전기화학회:학술대회논문집
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• 2002.04a
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• pp.48-48
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• 2002

• 한국전기화학회:학술대회논문집
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• 2001.10a
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• pp.38-38
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• 2001

• Polymer(Korea)
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• v.34 no.5
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• pp.450-453
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• 2010

The electrical/optical properties and surface structures of polypyrrole (PPy) thin films, which were prepared by liquid phase polymerization (LPP) and vapor phase polymerization (VPP) of pyrrole using FTS as an initiatior are compared. The PPy thin film prepared by VPP showed superior surface resistance characteristics as compared with that prepared by LPP. We investigated the relation between surface morphology of PPy film and surface resistance by surface characteristic analysis. The surface of PPy thin film prepared by VPP was smoother than that prepared by LPP. Micro-patterned PPy thin film could be prepared effectively using VPP-combined ink-jet printing and soft lithography.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.311-312
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• 2005

By using 45$^{\circ}$ obliqued evaporation method with electron beam system, uniformly vertical liquid crystal (LC) alignment was achieved. And a high pretilt angles of about 2.5$^{\circ}$ were measured. Also, it was verified that there are no variations of pretilt angle as a function of $SiO_x$ thin film thickness 20nm and 50nm. A good LC alignment states were observed at annealing temperature of 250$^{\circ}C$. The high pretilt angle and the good thermal stability of LC alignment by 45$^{\circ}$ obliqued electron beam evaporation method on the $SiO_x$ thin film can be achieved.