• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.790-794
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• 2003

This paper describes the fabrication and characteristics of ceramic thin film type pressure sensors based on Ta-N strain gauges for high temperature applications. Ta-N thin-film strain gauges are deposited onto a thermally oxidized Si diaphragm by RF sputtering in an argon-nitrogen atmos[here($N_2$ gas ratio: 8%, annealing condition: 90$0^{\circ}C$, 1 hr.), patterned on a wheatstone bridge configuration, and used as pressure sensing elements with a high stability and a high gauge factor. The sensitivity is 1.097 ～ 1.21 mV/Vㆍkgf/$\textrm{cm}^2$ in the temperature range of 25 ～ 200 $^{\circ}C$ and the maximum non-linearity resistance), non-linearity than existing Si piezoresistive pressure sensors. The fabricated ceramic thin-film type pressure sensor is expected to be usefully applied as pressure and load sensors that os operable under high-temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.838-841
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• 2003

The aim of the study is to scrutinize the relationship between the area of resonance and insertion loss by analyzing the characteristics of 2-port resonator. This was done through designing an air-gap type Film Bulk Acoustic Resonator (FBAR) by using CAD model for the application of bandpass filter of high-frequency band with piezoelectric thin film. Moreover, through the design of ladder-type BPF, we were able to observe changes in bandwidth, resonation, out-of-band rejection depending on the number and area of resonator.

• 한국재료학회지
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• 제26권4호
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• pp.222-227
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• 2016

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of $P_{O2}=3%$ was obtained with > 80% transmittance, carrier concentration of $1.12{\times}10^{18}cm^{-3}$, and mobility of $1.18cm^2V^{-1}s^{-1}$. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

• 한국정보전자통신기술학회논문지
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• 제11권6호
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• pp.772-777
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• 2018

본 논문은 RF 마크네트론 스퍼터링 장비를 이용하여 ITO 유리에 N-type 및 P-type을 증착하였다. N-Type의 오믹접촉은 모든 조건에서 잘 되었다. 면저항은 RF Power가 증가할수록 면 저항이 증가되는 현상을 나타내었다. 증착한 박막의 표면을 분석해 본 결과, RF Power가 250W이고, 기판온도가 $250^{\circ}C$의 조건에서 입자가 균일하고 크기가 일정한 박막이 증착 된 것으로 측정되었다. P-Type은 모든 조건에서 오믹접촉이 잘 이루어졌으며 면저항은 RF Power가 증가할수록 증가되는 것으로 나타내었다. RF Power가 증가할수록 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막과 NP junction 박막은 스퍼터링 시간이 증가할수록 박막의 두께가 증가하고 안정화 된 것을 알 수가 있었다. PN junction 박막을 제작한 결과, 변환효율은 스퍼터링 시간이 10분일 때 0.2로 가장 우수하였다.

• Mass Spectrometry Letters
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• 제12권1호
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• pp.26-30
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• 2021

The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

• Transactions on Electrical and Electronic Materials
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• 제10권1호
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• pp.24-27
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• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.74-83
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• 2001

In this study, the optimum structure of a magnetic thin film inductor was designed for application of DC-DC converters. The Ni$\sub$81/Fe$\sub$19/ (at%) alloy was selected as a high-frequency($\geq$MHz) magnetic thin film magnetron sputtering system. As-deposited NiFe thin films show similar magnetic properties compared to bulk NiFe alloys, indicating that they have a good film quality. The optimum design of dolenoid-type magnetic thin film inductors was performed utilizing a Maxwell computer simulator (Ansoftt HFSS V7.0 for PC) and parameters obtained from the magnetic properties of magnetic core materials selected. The high-frequency characteristics of the inductance(L) and quality factor(Q) obtained for the designed inductors through simulation agreed well with those obtained by theoretical calculations, confirming that the simulated result is realistic. The optimum structure of high-performance (Q$\geq$60, L = 1${\mu}$H, efficiency $\geq$90%), high-frequency ($\geq$5MHz), and solenoid-type magnetic thin film inductors was designed successfully.

• 한국산학기술학회논문지
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• 제12권5호
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• pp.2267-2271
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• 2011

p-채널 박막트랜지스터에 이용할 수 있는 p-형 산화구리 박막반도체를 얻기 위한 연구를 하였다. 진공열증착방법으로 산화구리 박막을 성막하였으며, 증착 후 열처리 조건을 조절하여 박막트랜지스터의 활성층에 적용 가능한 특성을 가지는 산화구리 박막반도체를 얻었다. 열처리 전에 $10^{22}\;cm^{-3}$ 수준의 전자 이송자농도를 가지던 n-형 박막이 열처리 조건을 최적화함에 따라 $10^{16}\;cm^{-3}$ 수준의 정공 이송자농도를 가지는 p-형 산화물반도체 박막으로 변화하였다.

• 정보저장시스템학회논문집
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• 제8권2호
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• pp.39-43
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• 2012

In spite of many advantages, the practical application of the thin film solar cell is restricted due to its low efficiency compared with the bulk type solar cells. This study intends to adopt the surface plasmon effect using nano particles to solve the low efficiency problem in thin film solar cells. By inserting Ag nano-particles in the absorbing layer of a thin film solar cell, the poynting vector value of the absorbing layer is increased due to the strong energy field. Increasing the value may give thin film solar cells chance to absorb more energy from the incident beam so that the efficiency of the thin film solar cell can be improved. In this work, we have designed the optimal shape of Ag nano-particle in the absorbing laser of a basic type thin film solar cell using the finite element analysis commercial package COMSOL. Design parameters are set to the particle diameter and the distance between each Ag nano-particle and by changing those parameters using the full factorial design variable set-up, we can determine optimal design of Ag nano-particles for maximizing the poynting vector value in the absorbing layer.

• Journal of the Korean Wood Science and Technology
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• 제23권4호
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• pp.74-84
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• 1995

Eight types of thin composite panels were manufactured by press-lam and mat-forming process applied to optimum manufacturing condition, studied in former first research by author (1995). They were tested and compared with control boards on dimensional stability, internal bond strength, tensile strength, Screw withdrawal strength, and bending properties. These thin composite panels manufactured by mat-forming process were generally superior to those by press-lam in dimensional stability and mechanical properties. In the dimensional stability and mechanical properties of thin composite panels manufactured by mat-forming process, the thin composite panels (A and E type) composed of particle or sawdust core and veneer face with polyethylene film, were as good as those of common plywood (control board). Internal bond strength showed highest value in the thin composite panel(D type) which composed of particle core and polypropylene screen face with polyethylene film. The thin composite panels(G and H type) composed of sawdust or particle core and polypropylene screen face with polyethylene film by press-lam and mat-forming process, showed most highest value in dimensional stability and water absorption.