• 대한디지털의료영상학회논문지
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• 제9권1호
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• pp.7-15
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• 2007

고정식 초점형 격자가 적용된 비정질 실리콘 평판형 검출기에서 초점-격자간 중심변위와 두부 팬텀의 검출기내 위치 변위가 영상 특성에 미치는 영향을 조사하여, 디지털 의료영상 장비의 올바른 사용 방법을 제안하고자 한다. 고정식 초점형 격자를 적용한 비정질 실리콘 평판형 검출기에서 두부 팬텀을 사용하여 초점-격자간 중심 변위와 두부 팬텀의 위치 변위에 따라 영상을 획득 하였다. 획득된 영상을 NIH(Image J) 영상 분석 프로그램을 이용하여 동일 영역에서의 픽셀값(Pixel value), 히스토그램(Histogram), 도면형상(plot profile), 표면도(Surface plot)등을 분석하고, 표준 촬영 영상과 비교 하였다. 초점-격자간 측 방향 중심 변위와 초점-격자와 두부 팬텀의 이중 변위는 수평, 대각선으로 증가할수록 픽셀의 평균값과 표준편차값이 비례적으로 감소하였다. 또한 높은 픽셀값의 빈도수가 상당히 감소하여 영상의 대조도를 저하시켰고, 변위가 증가할수록 영상 왜곡현상도 증가하였다. 다음으로 두부 팬텀 위치 변위의 픽셀 평균값은 큰 변화가 없었으나 수평, 대각선으로 증가할수록 높은 픽셀값의 빈도수가 감소하는 양상을 보여 영상의 대조도가 저하 되었다. 디지털 검출기의 넓은 관용도와 후처리 능력은 영상의 화소 잡음이 증가하여도 방사선사들이 인지하지 못할 수 있다. 따라서 방사선사는 격자가 장착된 디지털 검출기에서 화소 잡음을 증가시키는 촬영 요인들을 정확히 인지하여 검사에 임해야 할 것이다.

• 한국진공학회지
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• 제13권1호
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• pp.29-33
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• 2004

본 논문에서는 RF 마그네트론 스퍼터링법으로 비정질 실리콘을 증착하여 진공분위기에서 엑시머 레이저 어닐링을 이용하여 플라스틱 기판위에 극저온 다결정 실리콘 박막(＜$150^{\circ}C$)을 형성하였다. 비정질 실리콘 박막은 $120^{\circ}C$에서 Ar/He 혼합가스로 증착하였으며, Rutherford Backscattering Spectrometry로 측정한 박막내 아르곤 함량은 2% 이하였다. 에너지 밀도 320mJ/$\textrm{cm}^2$일 때 다결정 실리콘의 결정화도는 62%, Root-Mean-Square roughness는 267$\AA$를 나타내었다. 엑시머 레이저 결정화 후 결정립의 크기는 50nm에서 100nm 정도를 나타내었다.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.467-470
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• 2004

Diamond-Like Carbon (DLC) thin film is a semiconductor with high mechanical hardness, low friction coefficient, high chemical inertness, and optical transparency. DLC thin films have widespread applications as protective coatings and solid lubricant coatings in areas such as Hard Disk Drive (HDD) and Micro-Electro-Mechanical-Systems (MEMS). In this work, the wear characteristics of DLC thin films deposited on silicon substrates using a DC-magnetron sputtering system were analyzed. The wear tracks were measured with an Atomic Force Microscope (AFM). To identify the sp2 and sp3 hybridization of carbon bonds and other bonds Raman spectroscopy was used. The structural information of DLC thin films was obtained with Fourier transform infrared spectroscopy and wear tests were conducted by using a micro-pin-on-reciprocator tester. Results showed that the wear characteristics were dependent on the sputtering conditions. The wear rate could be correlated with the bonding state of the DLC thin film.

• 한국전기전자재료학회논문지
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• 제29권7호
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• pp.408-413
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• 2016

The dielectric thin films applied to multi-colored semitransparent thin film solar cells have been extensively studied. In this work, we prepared GeSbTe and GeTe chalcogenide thin films using magnetron sputtering, and investigated their optical and phase-change properties to replace the dielectric films. The changes of surface morphology, sheet resistance, and X-ray diffraction of the Te-based chalcogenide films support the fact that the amorphous stability of GeTe films is superior to that of GeSbTe films. While both amorphous GeSbTe and GeTe films thinner than 30 nm have optical transparency between 5% and 60%, GeTe films transmit more visible light than GeSbTe films. It is confirmed by computer simulation that the color of semitransparent silicon thin film solar cells can be adjusted with the addition of GeSbTe or GeTe films. Since it is possible to adjust the contrast of the solar cells by exploiting the phase-change property, the two kinds of chalcogenide films are anticipated to be used as an optical layer in semitransparent solar cells.

• Korean Chemical Engineering Research
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• 제48권2호
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• pp.218-223
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• 2010

본 연구에서는 반도체식 가스센서 재료로서 활용 가능한 ZnO 박막을 Continuous Flow Reaction(CFR) 방법으로 실리콘 기판 위에 성장시켰다. 또한 전구물질로 사용한 zinc acetate의 농도에 따른 산화아연 박막의 성장특성과 이들의 전기적 특성이 조사되었다. 산화아연 박막 제조는 0.005~0.02 M의 zinc acetate 농도에서 수행되었다. 산화아연 박막을 구성하고 있는 ZnO의 입자크기는 농도가 증가할수록 증가되었으며, 박막의 두께도 함께 증가되었다. CFR 법에 의한 산화아연 박막의 성장속도는 전구물질의 농도에 비례적으로 의존되는 것을 확인하였으며, 균일한 박막을 제조하기 위한 전구물질의 최적 농도는 0.01 M이였다. 한편, 전구물질의 농도를 달리하여 제조된 산화아연 박막의 전압에 대한 전류를 I-V 측정기로 측정한 결과, 박막의 두께가 증가될수록 높은 전류가 흘렀다. 그러므로 산화아연 박막의 전류를 전구물질의 농도변화로 조절할 수 있다. 또한 산화아연 박막을 $300^{\circ}C$에서 5 min 동안 $500ppmv\;H_2S$에 노출시킨 결과, 전압에 대한 전류값이 낮아졌다. 이와 같이 산화아연의 전기적 특성은 가스센서로 응용할 수 있는 가능성을 확인시켜 주는 결과라 할 수 있다.

• 한국재료학회지
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• 제14권2호
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• pp.90-93
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• 2004

Silicon dioxide thin films were deposited on p-type Si (100) substrates by atomic layer deposition (ALD) method using alternating exposures of $SiH_2$$Cl_2$ and $O_3$ at $300^{\circ}C$. $O_3$ was generated by corona discharge inside the delivery line of $O_2$. The oxide film was deposited mainly from $O_3$ not from $O_2$, because the deposited film was not observed without corona discharge under the same process conditions. The growth rate of the deposited films increased linearly with increasing the exposures of $SiH_2$$Cl_2$ and $O_3$ simultaneously, and was saturated at approximately 0.35 nm/cycle with the reactant exposures over $3.6 ${\times}$ 10^{9}$ /L. At a fixed $SiH_2$$Cl_2$ exposure of $1.2 ${\times}$ 10^{9}$L, growth rate increased with $O_3$ exposure and was saturated at approximately 0.28 nm/cycle with $O_3$ exposures over$ 2.4 ${\times}$ 10^{9}$ L. The composition of the deposited film also varied with the exposure of $O_3$. The [O]/[Si] ratio gradually increased up to 2 with increasing the exposure of $O_3$. Finally, the characteristics of ALD films were compared with those of the silicon oxide films deposited by conventional chemical vapor deposition (CVD) methods. The silicon oxide film prepared by ALD at $300^{\circ}C$ showed better stoichiometry and wet etch rate than those of the silicon oxide films deposited by low-pressure CVD (LPCVD) and atmospheric-pressure CVD (APCVD) at the deposition temperatures ranging from 400 to $800^{\circ}C$.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.817-821
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• 2011

We have proposed an optical thin film and micro lens to improve the luminance of organic light emitting device. The first method, optical thin film was calculated refractive index of dielectric layer material that was modulated refractive index of organic material, ITO (indium tin oxide)and glass. The second method, microlens was applied with lenses on the organic device. Optical thin films were designed with Macleod Simulator and Micro Lenses were calculated by FDTD (finite-difference time-domain) solution. The structure of thin film was designed in organic material/ITO/dielectric layer/glass. The lenses size, height and distance were 5 ${\mu}m$, 1 ${\mu}m$, 1 ${\mu}m$, respectively. The material of micro lenses used silicon dioxide. Result, The highest luminance of OLED which applied with microlens was 11,185 $cd/m^2$, when approval voltage was 14.5 V, applied thin film was 5,857 $cd/m^2$. The device efficiency applying microlens increased 3 times than the device which does not apply microlens.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.78-78
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• 2012

In this presentation I will review the expanding thermal plasma chemical vapour deposition (ETP-CVD) technology, a deposition technology capable of reaching ultrahigh deposition rates. High rate deposition of a-Si:H, ${\mu}c$-Si:H, a-SiNx:H and silicon nanocrystals will be discussed and their various applications, mainly for photovoltaic applications demonstrated. An important aspect over the years has been the fundamental investigation of the growth mechanism of these films. The various in situ (plasma) and thin film diagnostics, such as Langmuir probes, retarding field analyzer, (appearance potential) mass spectrometry and cavity ring absorption spectroscopy, spectroscopic ellipsometry to name a few, which were successfully applied to measure radical and ion density, their temperature and kinetic energy and their reactivity with the growth surface. The insights gained in the growth mechanism provided routes to novel applications of the ETP-CVD technology, such as the ultrahigh high growth rate of silicon nanorystals and surface passivation of c-Si surfaces.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.28-32
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• 1998

This paper reports on photoluminescence (PL), luminescence decay curves, and compositional analysis of porous silicon(PS) which is aged under air ambient by Fourier transform infrared vibrational spectroscopy (FTIR) and by Auger electron spectroscopy (AES). Porous silicos which has been aged under air ambient yields two PL band structures, i.e. blue/violet PL and red PL. The evolution of a blue/violet band is pronounced, especially for thin PS film which is prepared in dilute HF solution. The blue/violet PL band has been observed initially to increrase rapidly with aging, then saturated with further atmospheric aging. The ambient air aged PS exhibits a fast decay time of sub-nanosecond at room temperature and shows appreciably faster decay time than that at 20K. Atmospheric aging of this thin blue/violet luminescing PS yield non-stoichiometric oxide judging from the vibrational spectra of Si-O and AES analysis.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.45-48
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• 2008

The mechanical behavior of small-sized materials has been investigated for many industrial applications, including MEMS and semiconductors. It is challenging to obtain accurate mechanical properties measurements for thin films due to several technical difficulties, including measurement of strain, specimen alignment, and fabrication. In this work, we used the micro-tensile testing unit with the real-time DIC (Digital Image Correlation) strain measurement system. This system has advantages of real time strain monitoring up to 50 nm resolution during the micro-tensile test, and ability to measure the young's modulus and Poisson's ratio at the same time. The mechanical properties of SCS (Single Crystal Silicon) are measured by uniaxial tension test from freestanding SCS which are $2.5{\mu}m$ thick, $200-500{\mu}m$ wide specimens on the (100) plane. Young's modulus, Poisson's ratio and tensile strength in the <110> direction are measured by micro-tensile testing system.