• Korean Journal of Materials Research
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• v.24 no.12
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• pp.715-719
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• 2014

(PDDA/$SiO_2$) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged $SiO_2$ nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) self-assembly method. In this study, the microstructure and optical properties of the (PDDA/$SiO_2$) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and $SiO_2$ solution, the thickness of the $(PDDA/SiO_2)_{10}$ thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and $SiO_2$ solution increased. Especially, when the voltage was applied to the Pt electrode in the $SiO_2$ solution, the thickness increase of the (PDDA/$SiO_2$) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/$SiO_2$) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/$SiO_2$)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.27-31
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• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1288-1291
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• 2007

We investigated the effect of Cr thickness on the electrical properties of triisopropylsilyl pentacene organic thin-film transistor (OTFT) employing suspended source-drain electrode. With Cr thickness of 10 nm, the field-effect mobility, on/off ratio and subthreshold slope were $0.017\;cm^2/Vs$, $8.78\;{\times}\;10^3$ and 10 V/decade, respectively. By increasing the Cr thickness to 100 nm, the fieldeffect mobility was increased to $0.032\;cm^2/Vs$, on/off ratio to $1.12{\times}10^5$ and subthreshold slope to 1 V/decade.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.9
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• pp.29-35
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• 1992

Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

• Journal of the Korean Graphic Arts Communication Society
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• v.14 no.1
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

• Journal of Sensor Science and Technology
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• v.15 no.1
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• pp.65-70
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• 2006

Characteristics of thin-film NTC thermal sensors fabricated by micromachining technology were studied as a function of the thickness of membrane. The overall-structure of thermal sensor has a form of Au/Ti/NTC/$SiO_{X}$/(100)Si. NTC film of $Mn_{1.5}CoNi_{0.5}O_{4}$ with 0.5 mm in thickness was deposited on $SiO_{X}$ layer (1.2 mm) by PLD (pulsed laser deposition) and annealed at 873-1073 K in air for 1 hour. Au(200 nm)/Ti(100 nm) electrode was coated on NTC film by dc sputtering. By the results of microstructure, X-ray and NTC analysis, post-annealed NTC films at 973 K for 1 hour showed the best characteristics as NTC thermal sensing film. In order to reduce the thermal mass and thermal time constant of sensor, the sensing element was built-up on a thin membrane with the thickness of 20-65 mm. Sensors with thin sensing membrane showed the good detecting characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.3
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• pp.229-236
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• 1998

Ferroelectric $Sr_xBi_yTa_2O_{9+\alpha}$/(0.7$\leqSr\leq1.0,\; 2.0\leqBi\leq2.6)$ solutions were prepared by MOD (Metalorganic Deposition) process. These solutions were made into thin films with thickness ranging from 1500~2000${\AA}$ by spin coating. The phase transformation of the SBT thin films by variation of annealing temperature and annealing time were observed using high temperature XRD and SEM. The crystallization and grain growth of SBT thin film were accomplished at $800^{\circ}C$ for 30 minutes after deposition of Pt top electrode by sputtering to prevent electrical breakdown. Ferroelectric properties of the SBT thin films were measured in the range of $\pm$3V\; and\; \pm5V$. The specimen with composition ratio of Sr/Bi/Ta (0.8/2.4/2.0) has the excellent ferroelectric properties ; $2P_r = 10.5,\; 13.2\muC/cm^2 \;at\; \pm3V\; and\; \pm5V$ respectively. Observing the post annealed Pt/SBT/Pt interface by SEM, it was found that Pt electrode sputtered on to the SBT thin film penetrated into the hollow on the SBT thin film, thus decreasing the effective insulation thickness. The effective insulation thickness recovered by post annealing, and this was confirmed by leakage current density measurement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.72-75
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.97-98
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• 2007

In this paper, we analyzed the reset current variation of PRAM device with top electrode using the 3-D finite element analysis tool. As thickness of phase change material thin film decreased, reset current caused by phase transition highly increased. Joule's heat which was generated at the contact surface of phase change material and bottom electrode of PRAM was given off through top electrode to which was transferred phase change material. As thermal conductivity of top electrode decreased, heating temperate was increased.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1485-1486
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• 2011

A layer of $TiO_2$ thin film less than ~500nm in thickness, as a blocking layer, was coated by sol-gel method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte (I-/I3-). The effects of heat treatment conditions of the gel and as-coated film on the thickness and consolidation to substrate were studied. The flexible DSCs were fabricated with working electrode of Ti thin foil coated with blocking $TiO_2$ layer, dye-attached mesoporous $TiO_2$ film, gel electrolyte and counter electrode of Pt-deposited indium doped tin oxide/polyethylene naphthalate (ITO/PEN). The photo-current conversion efficiency of the cell was 5.3% ($V_{oc}=0.678V$, $J_{sc}=12.181mA/cm^2$, ff=0.634) under AM1.5, 100 mW/$cm^2$ illumination.