• 제목/요약/키워드: Thin film multilayers

검색결과 41건 처리시간 0.068초

Investigation of Giant Magnetoresistance in Vacuum-Annealed NiFe/Ag Discontinuous Multilayers

  • Park, Chang-Min;Kim, Young-Eok;Shin, Kyung-Ho
    • Journal of Magnetics
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    • 제2권2호
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    • pp.50-54
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    • 1997
  • The vacuum-annealed Ni80Fe20/Ag discontinuous multilayers were found to show giant magnetoresistive behaviors comparable to those of corresponding multilayers annealed at atmospheric pressure in a mixture of H2 and Ar. This vacuum-annealing process will offer potential advantages, enabling a continuous batch process from the deposition to the annealing. Their giant magnetoresistive behaviors were attributed to the magnetostatic coupling that are induced at the edges of the discontinuous magnetic grains. We also present our results about the multilayer patterned into a basic device for the magnetic field sensor.

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Positive Exchange Bias in Thin Film Multilayers Produced with Nano-oxide Layer

  • 전병선;황찬용
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.304-305
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    • 2013
  • We report a positive exchange bias (HE) in thinmultilayered filmscontaining nano-oxide layer. The positive HE, obtained for our system results from an antiferromagnetic coupling between the ferromagnetic (FM) CoFe and the antiferromagnetic (AFM) CoO layers, which spontaneously form on top of the nano-oxide layer (NOL). The shift in the hysteresis loop along the direction of thecooling field and the change in the sign of exchange bias are evidence of antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. Our calculation indicates that uncompensated oxygen moments in the NOL results in antiferromagnetic interfacial exchange coupling between the CoO and CoFe layers. One of the interesting features observed with our system is that it displays the positive HE even above the bulk Neel temperature (TN) of CoO. Although the positive HEsystem has a different AFM/FM interfacial spin structure compare to that of the negative HE one, the results of the angular dependence measurements show that the magnetization reversal mechanism can be considered within the framework of the coherent rotation model.

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Chemical Fixation of Polyelectrolyte Multilayers on Polymer Substrates

  • Tuong, Son Duy;Lee, Hee-Kyung;Kim, Hong-Doo
    • Macromolecular Research
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    • 제16권4호
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    • pp.373-378
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    • 2008
  • A simple chemical fixation method for the fabrication of layer-by-layer (LbL) polyelectrolyte multilayer (PEM) has been developed to create a large area, highly uniform film for various applications. PEM of weak poly-electrolytes, i.e., polyallylamine hydrogen chloride (PAH) and poly(acrylic acid)(PAA), was assembled on polymer substrates such as poly(methyl methacrylate)(PMMA) and polycarbonate (PC). In the case of a weak polyelectrolyte, the fabricated thin film thickness of the polyelectrolyte multilayers was strongly dependent on the pH of the processing solution, which enabled the film thickness or optical properties to be controlled. On the other hand, the environmental stability for device application was poor. In this study, we utilized the chemical fixation method using glutaraldehyde (GA)-amine reaction in order to stabilize the polyelectrolyte multilayers. By simple treatment of GA on the PEM film, the inherent morphology was fixed and the adhesion and mechanical strength were improved. Both surface tension and FT-IR measurements supported the chemical cross-linking reaction. The surface property of the polyelectrolyte films was altered and converted from hydrophilic to hydrophobic by chemical modification. The possible application to antireflection coating on PMMA and PC was demonstrated.

홀센서 InSb 박막 이동도의 온도의존성 (Temperature Dependent Mdbility Characteristics of InSb Thin Film)

  • 이우선;조준호;최권우;김남오;김형곤;김상용;서용진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.582-585
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    • 2001
  • InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

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OBSERVATION OF THE DOMAIN STRUCTURES IN SOFT MAGNETIC ${(Fe_{97}Al_3)}_{85}N_{15}/Al_2O_3$ MULTILAYERS

  • Stobiecki, T.;Zoladz, M.;Roell, K.;Maass, W.
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2002년도 동계연구발표회 논문개요집
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    • pp.14-15
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    • 2002
  • Iron nitride alloy films prepared in the form of laminated ${(Fe_{97}Al_3)}_{85}N_{15}/Al_2O_3$ multilayers (Ml's) due to excellent soft magnetic properties and high saturation magnetization [1, 2] are very promising materials for poles and shields in ultra high density thin film heads. The present work concerns the ferromagnetic (FM) coupling effect as a function of the thickness of $Al_2O_3$ spacers by analysis of the magnetic domain structure.

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Magnetic Properties of Nanocrystalline CoW Thin Film Alloys Electrodeposited from Citrate Baths

  • Park, Doek-Yong;Ko, Jang-Myoun
    • 전기화학회지
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    • 제6권4호
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    • pp.236-241
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    • 2003
  • Magnetic CoW thin film alloys were electrodeposited from citrate baths to investigate the resulting microstructure and magnetic properties. Deposit tungsten (W) content in the films electrodeposited at $70^{\circ}C$ were independent of current density, while coercivity decreased from hard $(H_{c,//}\~150\;Oe\;and\;H_{c.{\bot}}\;\~240\;Oe)$ to soft magnetic properties $(H_{c,//}\~20\;Oe\;and\;H_{c.{\bot}}\;\~30\;Oe)$ with increasing current densities from $10\;to\;100mA{\cdot}cm^2$, with deposit W content $(\~40\%)$ relatively unaffected by the applied current density. X-ray diffraction analysis indicated that hcp $Co_3W$ phases [(200), (201) and (220) planes] in the CoW films electrodeposited at $70^{\circ}C\;and\;10mA{\cdot}cm^{-2}$ were dominant, whereas amorphous CoW phases with small amount of hcp $Co_3W$ [(002) planes] were dominant with deposition at $70^{\circ}C\;and\;100mA{\cdot}cm^{-2}$. At intermediate current densities $(25\;and\;50mA{\cdot}cm^{-2}),\;hop\;Co_3W$ phases [(200), (002), (201) and (220)] were observed. The average grain size was measured to be 30 nm from Sheller formula. It is suggested that the change of the deposit coercivities in the CoW thin films electrodeposited at $70^{\circ}C$ is attributed to the change of microstructures with varying the current density. Nanostructured $Co_3W/amorphous-CoW$ multilayers were fabricated by alternating current density between 10 and $100 mA{\cdot}cm^{-2}$, varying the individual layer thickness. The magnetic properties of $Co_3W/amorphous-CoW$ multilayers were strongly dependent on the thickness of the alternating hard and soft magnetic thin films. The nanostructured $Co_3W/amorphous-CoW$ multilayers exhibited a shift from low to high coercivities suggesting a strong coupling effect.

InSb 박막의 홀효과 특성 (Hall Effect Characteristics of InSb Thin Film)

  • 이우선;조준호;최권우;정용호;김상용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.6-9
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    • 2000
  • InSb hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at $200^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

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InSb 박막 홀효과의 온도의존성 (Temperature Dependent Hall Effect Characteristics of InSb Thin Film)

  • 이우선;조준호;최권우;김남오;김상용
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.21-24
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    • 2000
  • lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

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건습식 혼합공정을 이용한 유연소재 상 전자파 차폐용 다층막 코팅 (Multilayer Coatings on Flexible substrate for Electromagnetic Shielding by Using Dry/Wet Hybrid Processes)

  • 이훈성;이명훈
    • 한국표면공학회지
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    • 제50권5호
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    • pp.373-379
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    • 2017
  • Dry processes like evaporation and sputtering in vacuum chamber are difficult to make a uniform, large area and high quality film on thin PET substrate because of PET degradation and bad adhesion. On the other hand, wet processes like electro or electroless plating have complex processes and require high environmental cost. In this study, we successfully prepared $2{\mu}m$ Zn/Cu/Ni multilayers coated on $12{\mu}m$ polyethylene terephthalate (PET) substrate by using dry-wet mixing processes. Their surface electric resistances were evaluated around $0.2{\Omega}$ by using 4 probe measurements. Furthermore, their corrosion resistance also evaluated by natural potential test and compared with other wet, dry and mixing process samples.

레이저 초음파 기법을 이용한 박막 탄성계수 측정 (Elastic modulus measurement of thin films using laser generated guided ultrasonic waves)

  • 조승현;허태훈;지봉규;안봉영;장강원
    • 한국소음진동공학회:학술대회논문집
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    • 한국소음진동공학회 2014년도 추계학술대회 논문집
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    • pp.550-554
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    • 2014
  • Regarding thin films in MEMS/NEMS structures, the exact evaluation of mechanical properties is very essential to enhance the reliability of their design and manufacturing. However, such methods as a tensile test and a resonance test, general methods to measure elastic moduli, cannot be applied to thin films since its thickness is so small. This work concerns guided wave based elastic modulus measurement method. To this end, guided wave excitation and detection system using a pulsed laser and a laser interferometry has been established. Also an elastic modulus extraction algorithm from the measured guided wave signal was developed. Finally, it was applied to actual thin film structures such as Ni-Si and Al-Si multilayers. From experimental results, we confirm that the proposed method has considerable feasibility to measure elastic properties of thin films.

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