• Progress in Superconductivity
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• 제11권1호
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• pp.36-41
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• 2009

Superconducting quantum phenomena are getting attention from the field of metrology area. Following its first successful application of Josephson effect to voltage standard, piconewton force standard was suggested as a candidate for the next application of superconducting quantum effects in metrology. It is predicted that a micron-sized superconducting Nb ring in a strong magnetic field gradient generates a quantized force of the order of sub-piconewtons. In this work, we studied the design and fabrication of Nb superconducting quantum interference device (SQUID) on an ultra-thin silicon cantilever. The Nb SQUID and electrodes were structured on a silicon-on-insulator (SOI) wafer by dc magnetron sputtering and lift-off lithography. Using the resulting SOI wafer, we fabricated V-shaped and parallel-beam cantilevers, each with a $30-{\mu}m$-wide paddle; the length, width, and thickness of each cantilever arm were typically $440{\mu}m,\;4.5{\mu}m$, and $0.34{\mu}m$, respectively. However, the cantilevers underwent bending, a technical difficulty commonly encountered during the fabrication of electrical circuits on ultra-soft mechanical substrates. In order to circumvent this difficulty, we controlled the Ar pressure during Nb sputtering to minimize the intrinsic stress in the Nb film and studied the effect of residual stress on the resultant device.

• 센서학회지
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• 제13권1호
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• pp.35-40
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• 2004

A thin-film multijunction thermal converter was fabricated through the process using 6 inch silicon wafer semiconductor process and bulk micromachining. Evanohm R alloy and chromel-constantan were used as a heater and thermocouple materials, respectively. The temperature coefficient of resistance of Evanohm R heater was about 75.12 ppm/$^{\circ}C$ and the voltage sensitivity of the thermal converter indicated about 5.75 mV/mW in air. The transfer differences, measured by FRDC-DC method in the frequency range from 20 Hz to 10 kHz, showed the value under about 1.36 ppm, 0.83 ppm for the film thickness of 500, 200 nm, respectively. And in case of a 200 nm-thick thermal converter, the AC-DC transfer differences seems to be stabilized below the value of 1 ppm in the frequency range from 1 kHz to 500 kHz.

• 한국광학회지
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• 제10권5호
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• pp.373-378
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• 1999

투명한 유전체 박막과 관련된 측정 분야는 반도체 산업의 발전과 함께 급속히 성장하고 있으며, 회로의 고집적화 추세에 맞추어 고정밀도의 측정 성능을 요구하고 있다. 최근 웨이퍼의 광역 평탄화를 위한 CMP(chemical mechanical polishing)공정의 도입으로 인하여 박막의 두께뿐만 아니라 미세 형상에 대한 측정 요구가 증가하고 있다. 이 논문에서는 기존의 비접촉 표면 형상 측정법의 하나인 백색광 주사 간섭법을 이용하여 박막의 두께 형상을 측정하여 새로운 측정 알고리즘 제시하고자 한다. 이 방법은 기존의 백색광 간섭 신호 해석법의 하나인 주파수 분석법과 비선형 최소 자승법을 이용함으로써 구현된다. 그리고 실험을 통하여 개발된 알고리즘의 타당성을 검증한다.

• Current Optics and Photonics
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• 제1권1호
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• pp.29-33
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• 2017

A method for analysis of thin film thickness in spectroscopic reflectometry is proposed. In spectroscopic reflectometry, there has been a trade-off between accuracy and computation speed using the conventional analysis algorithms. The trade-off originated from the nonlinearity of spectral reflectance with respect to film thickness. In this paper, the spectral phase is extracted from spectral reflectance, and the thickness of the film can be calculated by linear equations. By using the proposed method, film thickness can be measured very fast with high accuracy. The simulation result shows that the film thickness can be acquired with high accuracy. In the simulation, analysis error is lower than 0.01% in the thickness range from 100 nm to 4 um. The experiments also show good accuracy. Maximum error is under $40{\AA}$ in the thickness range $3,000-20,000{\AA}$. The experiments present that the proposed method is very fast. It takes only 2.6 s for volumetric thickness analysis of 640*480 pixels. The study suggests that the method can be a useful tool for the volumetric thickness measurement in display and semiconductor industries.

• 전자공학회논문지D
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• 제36D권9호
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• pp.37-45
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• 1999

박막형 다중접합 열전변환기의 시간에 따른 출력 전압 변화를 감소시키기 위해 벌크의 저항온도계수가 매우 적은 EVANOHM-S 합금을 박막 히터재료로 사용하였고, 또한 Seebeck 계수차이가 비교적 작은 크로멜-알루멜 열전쌍을 박막 열전퇴(thermopile)의 열전요소로 하였다. EVANOHM-S 박막 히터의 저항온도계수는 약 $1.4 {\times} 10^4/^{\circ}C$ 였고, 크로멜-알루멜 박막 열전쌍의 Seebeck 계수차이는 약 $38 {\mu}V/K$였다. 열전변환기의 출력 전압 변화는 공기중에서 처음 120초 동안 약 0.06%였고, 약 5분간이상 히터의 예열후 출력전압 변화는 현저히 감소하였다. 10 Hz ~ 10 kHz의 주파수 범위에서 열전변환기의 교류-직류 전압 및 전류 변환 오차범위는 각각 ${\pm}$1.6 ppm 및 ${\pm}$0.7 ppm이었고, 10Hz 이하 또는 10 kHz 이상의 주파수에서는 교류-직류 변환오차가 크게 증가하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.141-141
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• 2010

The effect of thermal anneal on the characteristics of structural properties and the enhancement of luminescence and photovoltaic (PV) characteristics of silicon-rich silicon-nitride films were investigated. By using an ultra high vacuum ion beam sputtering deposition, B-doped silicon-rich silicon-nitride (SRSN) thin films, with excess silicon content of 15 at. %, on P-doped (n-type) Si substrate was fabricated, sputtering a highly B doped Si wafer with a BN chip by N plasma. In order to examine the influence of thermal anneal, films were then annealed at different temperature up to $1100^{\circ}C$ under $N_2$ environment. Raman, X-ray diffraction, and X-ray photoemission spectroscopy did not show any reliable evidence of amorphous or crystalline Si clusters allowing us concluding that nearly no Si nano-cluster could be formed through the precipitation of excess Si from SRSN matrix during thermal anneal. Instead, results of Fourier transform infrared and X-ray photoemission spectroscopy clearly indicated that defective, amorphous Si-N matrix of films was changed to be well-ordered thanks to high temperature anneal. The measurement of spectral ellipsometry in UV-visible range was carried out and we found that the optical absorption edge of film was shifted to higher energy as the anneal temperature increased as the results of thermal anneal induced formation of $Si_3N_4$-like matrix. These are consistent with the observation that higher visible photoluminescence, which is likely due to the presence of Si-N bonds, from anneals at higher temperature. Based on these films, PV cells were fabricated by the formation of front/back metal electrodes. For all cells, typical I-V characteristic of p-n diode junction was observed. We also tried to measure PV properties using a solar-simulator and confirmed successful operation of PV devices. Carrier transport mechanism depending on anneal temperature and the implication of PV cells based on SRSN films were also discussed.

• 한국정밀공학회지
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• 제21권6호
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• pp.15-21
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• 2004

반도체 제조산업과 나노, 바이오 산업의 비약적 발전에 따라 게이트 산화막(gate oxide)과 같이 반도체 제조공정에서 사용되는 유전체 박막(dielectric film)의 두께는 수 $\mu\textrm{m}$에서 수 nm 에 이르기까지 다양할 뿐 아니라 얇아지고 있으며, 또한 이러한 박막들이 다층으로 복잡하게 적층된 다층 박막의 응용이 높아지는 추세이다. 따라서, 반도체 및 광통신 소자, 발광소자, 바이오 칩 어레이 등과 같은 나노박막을 이용하는 산업에서는 박막의 두께 측정을 더욱 정확하고, 보다 빠르며 효율적으로 측정할 수 있는 박막 두께 측정용 계측기가 요구된다.(중략)

• Journal of the Optical Society of Korea
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• 제8권1호
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• pp.34-52
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• 2004

Over the past decade the experimental technique of THz time domain spectroscopy (㎔- TDS) has proved to be a versatile method for investigating a wide range of phenomena in the ㎔ or far infrared spectral region from 100 ㎓ to 5 ㎔. This paper reviews some recent results of the Ultrafast ㎔ Research Group at Oklahoma State University using ㎔-TDS as a characterization tool. The experimental technique is described along with recent results on ㎔ beam propagation and how ㎔ beam profiles arise from propagation of pulse fronts along caustics. To illustrate how spatio-temporal electric field measurements can determine material properties over a wide spectral range, propagation of ㎔ pulses through systems exhibiting frustrated total internal reflection (FTIR) are reviewed. Finally two potential metrology applications of ㎔-TDS are discussed, thin film characterization and non-destructive evaluation of ceramics. Although ㎔-TDS has been confined to the research laboratory, the focus on application may stimulate the adoption of ㎔- TDS for industrial or metrology applications.

• 센서학회지
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• 제9권4호
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• pp.288-296
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• 2000

$64{\sim}85\;{\Omega}$의 저출력저항을 갖는 박막 크로멜-알루멜 다중접합 열전변환기의 입력-출력 관계는 근사적으로 제곱법칙을 따랐지만, 전압 감응도는 공기 중 및 진공 중에서 각각 $0.34{\sim}0.67\;V/W$ 및 $1.15{\sim}1.48\;V/W$로서 매우 작았고, 공기 중에서 교류-직류 전압 변환오차는 입력이 1 V의 정현파 실효전압일 때 $40\;Hz{\sim}10\;kHz$의 주파수 범위에서 약 +340 ppm으로서 매우 크게 나타났다. 열전변환기의 큰 변환오차는 주로 저출력저항으로부터 기인된 작은 전압 감응도 및 큰 열손실 때문으로 생각되고, 따라서 작은 교류-직류 변환오차를 얻기 위한 최적화가 필요하다.

• Journal of the Optical Society of Korea
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• 제19권6호
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• pp.705-710
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• 2015

The fabrication process of thin boron-doped nanocrystalline diamond (B-NCD) microelectrodes on fused silica single mode optical fiber cladding has been investigated. The B-NCD films were deposited on the fibers using Microwave Plasma Assisted Chemical Vapor Deposition (MW PA CVD) at glass substrate temperature of 475 ℃. We have obtained homogenous, continuous and polycrystalline surface morphology with high sp³ content in B-NCD films and mean grain size in the range of 100-250 nm. The films deposited on the glass reference samples exhibit high refractive index (n=2.05 at λ=550 nm) and low extinction coefficient. Furthermore, cyclic voltammograms (CV) were recorded to determine the electrochemical window and reaction reversibility at the B-NCD fiber-based electrode. CV measurements in aqueous media consisting of 5 mM K₃[Fe(CN)₆] in 0.5 M Na₂SO₄ demonstrated a width of the electrochemical window up to 1.03 V and relatively fast kinetics expressed by a redox peak splitting below 500 mV. Moreover, thanks to high-n B-NCD overlay, the coated fibers can be also used for enhancing the sensitivity of long-period gratings (LPGs) induced in the fiber. The LPG is capable of measuring variations in refractive index of the surrounding liquid by tracing the shift in resonance appearing in the transmitted spectrum. Possible combined CV and LPG-based measurements are discussed in this work.