• Title/Summary/Keyword: Thin film evaporation

Search Result 522, Processing Time 0.03 seconds

Liquid crystal aligning capabilities for vertical aligned NLC on the $CeO_x$ thin film layer with thermal evaporation

  • Han, Jin-Woo;Kim, Mi-Jung;Kim, Jong-Yeon;Han, Jeong-Min;Kim, Young-Hwan;Kim, Jong-Hwan;Kim, Byoung-Yong;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2007.11a
    • /
    • pp.371-371
    • /
    • 2007
  • In this study, liquid crystal (LC) aligning capabilities for vertical alignment on the $CeO_x$ thin film by thermal evaporation method were investigated. Also, the control of pretilt angles and thermal stabilities of the NLC treated on $CeO_x$ thin film were investgated. The uniform LC alignment on the $CeO_x$ thin film surfaces and good thermal stabilities with thermal evaporation can be achieved. It is considerated that the LC alignment on the $CeO_x$ thin film by thermal evaporation is attributed to elastic interaction between LC molecules and micro-grooves at the $CeO_x$ thin film surface created by evaporation. In addition, it can be achieved the good electro-optical (EO) properties of the VA-LCD on $CeO_x$ thin film layer with oblique thermal evaporation.

  • PDF

Enhancement of thin film evaporation on low-fin tubes (낮은핀관의 액막 증발 촉진에 관한 연구)

  • 김내현
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
    • /
    • v.10 no.6
    • /
    • pp.674-682
    • /
    • 1998
  • In this study, thin film evaporation of water on low-fin tubes were experimentally investigated. Five low-fin tubes with different fin spacing and fin height were tested. Test range covered 0.146kg/ms $\leq$$\Gamma$$\leq$0.219kg/ms and 10㎾/$\m^2$$\leq$q $\leq$70㎾/$\m^2$. Saturation temperature was loot. Compared with the plain tube, low fin tubes enhanced the water film evaporation from 60% to 100%. Tubes with fin spacing smaller than 2mm and fin height higher than 1mm performed better than tubes with other fin configuration. However, when fin spacing was too small at high film flow or fin height was too high at low film flow, the performance decreased. The heat transfer coefficient slightly increased as the flow rate increased. Correlations are developed based on present data.

  • PDF

Cu(In,Ga)$Se_2$ Absorber Layer Prepared by Electron Beam Evaporation Method for Thin Film Solar Cell

  • Li, Zhao-Hui;Cho, Eou-Sik;Noh, Gap-Seong;Lim, Jae-Eok;Pahk, Heui-Jae;Bae, Kyung-Bin;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2009.10a
    • /
    • pp.1564-1567
    • /
    • 2009
  • Cu(In,Ga)$Se_2$ (CIGS) thin films were formed using CIGS bulk by electron-beam evaporation method with an evaporation current from 20 mA to 90 mA. The experimental results showed that the chemical compositions and the properties of CIGS films varied with the different evaporation current. The Cu-rich CIGS film was deposited successfully with a band gap of 1.20 eV when the evaporation current was 90 mA.

  • PDF

Characteristics of Thin Films Fabricated by Using the Layer-by-Layer Sputtering and Evaporation Method (순차 스퍼터 법과 증발 법으로 제작한 박막의 특성)

  • Cheon, Min-Woo;Park, Yong-Pil;Kim, Jeong-Ho
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2003.11a
    • /
    • pp.571-574
    • /
    • 2003
  • The thin films fabricated by using the layer-by-layer sputtering was compared with the thin film fabricated by using the evaporation method. Re-evaporation in the form of Bi atoms or $Bi_2O_3$ molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer-by-layer deposition. On the other hand, the respective atom numbers corresponding to BiSrCaCuO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BiSrCaCuO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

  • PDF

-Physical Properties of Metal Thin Film-(Changes of Structure with Evaporation Rates) (금속박막의 물리적 성질(I)(증착속도에 따르는 구조변화))

  • 백수현;조현춘
    • Journal of the Korean Institute of Telematics and Electronics
    • /
    • v.24 no.6
    • /
    • pp.980-985
    • /
    • 1987
  • The thin metal films of Cr, Al, Mn and were made in various evaporation rates with 100\ulcornerthickness under 2x10**-9 bar vacuum level. We analized and discussed the relationships between changes of structure, morphology and sheet resistance, light transmittance for the corresponding evaporation rates. As the evaporation rates were decreased at higher rates, grain sizes of all film were decreased, however both of the sheet resistance and light transmittance were increased. At lower evaporation rate, films of Cr and Cu porduced non-stoi-chiometric oxides but Al an Mn showed up amorphous structures.

  • PDF

The Formation Technique of Thin Film Heaters for Heat Transfer Components (열교환 부품용 발열체 형성기술)

  • 조남인;김민철
    • Journal of the Semiconductor & Display Technology
    • /
    • v.2 no.4
    • /
    • pp.31-35
    • /
    • 2003
  • We present a formation technique of thin film heater for heat transfer components. Thin film structures of Cr-Si have been prepared on top of alumina substrates by magnetron sputtering. More samples of Mo thin films were prepared on silicon oxide and silicon nitride substrates by electron beam evaporation technology. The electrical properties of the thin film structures were measured up to the temperature of $500^{\circ}C$. The thickness of the thin films was ranged to about 1 um, and a post annealing up to $900^{\circ}C$ was carried out to achieve more reliable film structures. In measurements of temperature coefficient of resistance (TCR), chrome-rich films show the metallic properties; whereas silicon-rich films do the semiconductor properties. Optimal composition between Cr and Si was obtained as 1 : 2, and there is 20% change or less of surface resistance from room temperature to $500^{\circ}C$. Scanning electron microscopy (SEM) and Auger electron spectroscopy (AES) were used for the material analysis of the thin films.

  • PDF

Surface Chemical Reactions for Metal Organic Semiconductor Films by Alternative Atomic Layer Deposition and Thermal Evaporation

  • Kim, Seong Jun;Min, Pok Ki;Lim, Jong Sun;Kong, Ki-Jeong;An, Ki-Seok
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.166.2-166.2
    • /
    • 2014
  • In this work, we demonstrated a facile and effective method for deposition of metal tetraphenylporphyrin (MTPP) thin film by a combined a thermal evaporation (TE) and atomic layer deposition (ALD). For the deposition of Zn-TPP thin film, Tetraphenylporphyrin (TPP) and diethyl zinc (DEZ) were used as organic and inorganic materials, respectively. Optimum conditions for the deposition of Zn-TPP thin film were established systematically: (1) the exposure time of DEZ as inorganic precursor and (2) the substrate temperature were adjusted, respectively. As a result, we verified that the surface reaction between organic semiconductor (TPP) and metal atom (Zn) was ALD process. In addition, we calculated activation energy by using Arrhenius equation for the substrate temperature versus area change rate of pyrrolic nitrogen. The surface and interface reactions between TPP with Zn were investigated by X-ray photoelectron spectroscopy, Raman spectroscopy, UV-vis spectroscopy, and scanning electron microscopy. These results show a facile and well-controllable fabrication technique for the metal-organic thin film for future electronic applications.

  • PDF

Analysis of Bi-Superconducting Thin Films Fabricated by Using the Layer by Layer Deposition and Evaporation Deposition Method

  • Yang, Seung-Ho;Cheon, Min-Woo;Lee, Ho-Shik;Park, Yong-Pil
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2007.06a
    • /
    • pp.517-520
    • /
    • 2007
  • The BSCCO thin film fabricated by using the layer by layer deposition method was compared with the BSCCO thin film fabricated by using the evaporation method. Reevaporation in the form of Bi atoms or $Bi_2O_3$molecules easily bring out the deficiency of Bi atoms in thin film due to the long sputtering time of the layer by layer deposition. On the other hand, the respective atom numbers corresponding to BSCCO phase is concurrently supplied on the film surface in the evaporation deposition process and leads to BSCCO phase formation. Also, it is cofirmed that by optimizing the deposition condition, each single phase of the Bi2201 phase and the Bi2212 phase can be fabricated, the sticking coefficient of Bi element is clearly related to the changing of substrate temperature and the formation of the Bi2212 phase.

  • PDF

Design and Development of Sputter-evaporation System for Micro-wiring on Medical Catheter (의료용 도뇨관 표면의 도선용 구리 박막 증착을 위한 스퍼터링-열증착 연속공정장비의 설계 및 개발)

  • Chang, Jun-Keun;Chung, Seok
    • Journal of the Korean Society for Precision Engineering
    • /
    • v.16 no.3 s.96
    • /
    • pp.62-71
    • /
    • 1999
  • Integrating micro-machined sensors and actuators on the conventional devices with the copper power lines was incompatible to fabricate the mass produced micro electromechanical system (MEMS) devices. To achieve the compatibility of the wiring method between MEMS parts and devices, we developed the three-dimensional sputter-evaporation system that coats micropatterned thin copper films on the surface of the MEMS element. The system consists of a process chamber, two branch chambers, the substrate holder, and a linear-rotary motion feedthrough. Thin copper film was sputtered and evaporated on the biocompatible polymer, Pellethane$^{circed{R}}$ and silicone, catheter that is 2 mm in diameter and 700 mm in length. The metal film coating technique with three-dimensional thin film sputter-evaporation system was developed to apply the power and signal lines on the micro active endoscope. In this paper, we developed the three-dimensional metal film sputter-evaporation system operated on the low temperature for the biopolymeric substrates used in the medical MEMS devices.

  • PDF

Properties of Inclined Silicon Carbide Thin Films Deposited by Vacuum Thermal Evaporation

  • Hamadi Oday A.;Yahia Khaled Z.;Jassim Oday N.S.
    • JSTS:Journal of Semiconductor Technology and Science
    • /
    • v.5 no.3
    • /
    • pp.182-186
    • /
    • 2005
  • In this work, thermal evaporation system was employed to deposit thin films of SiC on glass substrates in order to determine the parameters of them. Measurements included transmission, absorption, Seebak effect, resistivity and conductivity, absorption coefficient, type of energy band-gap, extinction coefficient as functions of photon energy and the effect of increasing film thickness on transmittance. Results explained that SiC thin film is an n-type semiconductor of indirect energy band-gap of ${\sim}3eV$, cut-off wavelength of 448nm, absorption coefficient of $3.4395{\times}10^{4}cm^{-1}$ and extinction coefficient of 0.154. The experimental measured values are in good agreement with the typical values of SiC thin films prepared by other advanced deposition techniques.