• 제목/요약/키워드: Thin film deposition

검색결과 2,988건 처리시간 0.034초

플라즈마 화학 기상 증착법에서 DC bias가 인가된 탄소나노튜브의 수직성장과 전계방출 특성 (The Vertical Growth of CNTs by DC Bias-Assisted PECVD and Their Field Emission Properties.)

  • 정성회;김광식;장건익;류호진
    • 한국전기전자재료학회논문지
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    • 제15권4호
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    • pp.367-372
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    • 2002
  • The vertically well-aligned carbon nanotubes(CNTs) were successfully grown on Ni coated silicon wafer substrate by DC bias-assisted PECVD(Plasma Enhanced Chemical Vapor Deposition). As a catalyst, Ni thin film of thickness ranging from 15~30nm was prepared by electron beam evaporator method. In order to find the optimum growth condition, the type of gas mixture such as $C_2H_2-NH_3$ was systematically investigated by adjusting the gas mixing ratio at $570^{\circ}C$ under 0.4Torr. The diameter of the grown CNTs was 40~200nm and the diameter of the CNTs increased with increasing the Ni particles size. TEM images clearly showed carbon nanotubes to be multiwalled. The measured turn-on field was $3.9V/\mu\textrm{m}$ and an emission current of $1.4{\times}10^4A/\textrm{cm}^2$ was $7V/\mu\textrm{m}$. The CNTs grown by bias-assisted PECVD was able to demonstrate high quality in terms of vertical alignment, crystallization of graphite and the processing technique at low temperature of $570^{\circ}C$ and this can be applied for the emitter tip of FEDs.

국산동판을 사용한 리드프레임 도금기술에 관한 연구 (Electroplating on the Lead Frames Fabricated from Domestic Copper Plate)

  • 장현구;이대승
    • 한국표면공학회지
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    • 제19권3호
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    • pp.92-108
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    • 1986
  • An electroplating on the lead frame fabricated from domestic copper plate was studied experimentally. In this study, nickel was plated on the thin copper lead frame and silver layer was coated on the nickel film in the cyanide electrolyte. The effect of process variables such as current density, plating time, coating thickness and flow rate of electrolytic solution on the properties of coating was investigated. Some samples on each step were fabricated during electroplating. The results obtained from polarization measurement, observation of SEM photograph, adhesion test of coating and microhardness test are as follows. On silver plating, polarization resistance of potentiostatic cathodic polarization curve is reduced as the flow rate of Ag electrolytic solution increases. And above resistance is also reduced when the minor chemicals of sodium cyanide and sodium carbonate are added in potassium silver cyanide bath. The reduced polarization resistance makes silver deposition on the cathode easy. An increase in the current density and the coating thickness causes the particle size of deposit to coarsen, and consequently the Knoop microhardness of the coating decreases. On selective plating an increase in the flow rate of plating solution lead to do high speed plating with high current density. In this case, the surface morphology of deposit is of fine microstructure with high Knoop hardness. An increasing trend of the adhesion of coating was shown with increasing the current density and flow rate of electrolytic solution.

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Ar 플라즈마 상태에서 운동하는 탄소 입자 모델링 (Carbon Plume Modeling Assisted by Ar Plasmas)

  • 소순열;이진;정해덕;여인선
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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    • pp.2163-2165
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    • 2005
  • A pulsed laser ablation deposition (PLAD) technique has been used for producing fine particle as well as thin film at relatively low substrate temperatures. However, in order to manufacture and evaluate such materials in detail, motions of plume particles generated by laser ablation have to be understood and interactions between the particles by ablation and gas plasma have to be clarified. Therefore, this paper was focused on the understanding of plume motion in laser ablation assisted by Ar plasma at 50(mTorr). Two-dimensional hybrid model consisting of fluid and particle models was developed and three kinds of plume particles which are carbon atom (C), ion $(C^+)$ and electron were considered in the calculation of particle method It was obtained that ablated $C^+$ was electrically captured in Ar plasmas by strong electric field (E). The difference between motions of the ablated electrons and $C^+$ made E strong and the collisional processes active.

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레이저 빔을 이용한 비정질실리콘 전기적 특성의 비파괴 측정 (Nondestructive Measurement on Electrical Characteristics of Amorphous Silicon by Using the Laser Beam)

  • 박남천
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 추계학술대회 논문집
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    • pp.36-39
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    • 2000
  • A small electrical potential difference which appears on any solid body when subjected to illumination by a modulated light beam generated by laser is called photocharge voltage(PCV)[1,2]. This voltage is proportional to the induced change in the surface electrical charge and is capacitatively measured on various materials such as conductors, semiconductors, ceramics, dielectrics and biological objects. The amplitude of the detected signal depends on the type of material under investigation, and on the surface properties of the sample. In photocharge voltage spectroscopy measurements[3], the sample is illuminated by both a steady state monochromatic bias light and the pulsed laser. The monochromatic light is used to created a variation in the steady state population of trap levels in the surface and space charge region of semiconductor samples which does result in a change in the measured voltage. Using this technique the spatial variation of PCV can be utilized to evaluate the surface conditions of the sample and the variation of the PCV due to the monochromatic bias light are utilized to characterize the surface states. A qualitative analysis of the proposed measurement is present along with experimental results performed on amorphous silicon samples. The deposition temperature was varied in order to obtain samples with different structural, optical and electronic properties and measurements are related to the defect density in amorphous thin film.

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TiAlSiN 코팅의 대기중 고온산화 속도와 스케일 분석 (High-temperature Oxidation Kinekics and Scales Formed on the TiAlSiN film)

  • 지권용;박상환;김민정;박순용;정승부;이동복
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2015년도 춘계학술대회 논문집
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    • pp.131-132
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    • 2015
  • $Ti_{0.26}Al_{0.16}Si_{0.01}N_{0.57}$ (at%) coatings were synthesized on stainless steel 304 by using arc ion plating systems (AIPS). Targets employed for the deposition were Ti, AlSi(67:33at%) and AlSi(82:18at%). The thickness of TiAlSiN coatings is $4{\mu}m$. The oxidation characteristics of the deposited coatings were studied by thermogravimetric analysis (TGA) in air between 800 and $900^{\circ}C$ for 75 hr. The oxide scale formed on the TiAlSiN coatings consisted of $rutile-TiO_2$ layer and ${\alpha}-Al_2O_3$. At $800^{\circ}C$, the coatings oxidized relatively slowly, and the scales were thin and adherent. When oxidized above $900^{\circ}C$, $TiO_2$ grew fast over the mixed oxide layer, and the oxide scale formed on TiAlSiN coatings was prone to spallation. Microstructural changes of the TiAlSiN coatings that occurred during high temperature oxidation were investigated by EPMA, XRD, SEM and TEM.

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ICP-CVD에 의해 Ar 플라즈마 처리된 AZO 박막의 표면 거칠기에 관한 연구 (A study for properties of AZO thin film prepared to Ar-plasma treatment using ICP-CVD)

  • 방태복;유성원;김덕수;조도현;이병로;김종재;박승환;홍우표;김화민
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.386-387
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    • 2007
  • ICP-CVD(Inductively Coupled Plasma-Chemical Vapor Deposition)를 이용하여 플라즈마 처리에 따른 Al이 도핑된 ZnO(AZO) 박막의 표면 부착력과 굴절율, 표면거칠기에 관한 연구를 하였다. 플라즈마 처리는 인가전압, 시간을 변수로 하였고 반응 가스는 Ar을 사용하였다. 표면조성은 AFM, 광학적 특성은 UV-Vis 분광계를 이용한 광투과도 측정으로부터 굴절률과 밴드갭을 조사하였고 표면 부착력은 접촉각 분석기(제조사:Kruss)를 사용하여 조사하였다. 플라즈마 처리 시간이 길어짐에 따라 박막 표면의 거칠기가 커지고 부착력은 증가하는 것으로 나타났다.

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PBLG와 PBDG의 상전이와 전기특성에 관한 연구 (A Study on the Phase Transfer and Electrical Properties of PBLG and PBDG)

  • 김병근;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.400-403
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    • 2003
  • Recently, the study on development of electrical and electronic device is done to get miniature, high degrees of integration and efficiency by using inorganic materials. the study of Langmuir-Boldgett(LB) method that uses organic materials because of the limitation for the ultra small size. In this paper, detected displacement current using PBLG and PBDG, deposition and observed the electrical characteristics to each 1, 3, 5, 7, 9 layers by LB method. Maximum value of change ratio of displacement current by the detected speed and temperature appeared almost lineally, could confirm that it are in comparison relation each other speed temperature and displacement current. The structure of manufactured device is MIM. Also, we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from 0 to +2[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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태양전지용 $Cu_2S$ 나노와이어의 제작 및 특성분석 (Copper Sulfide Nanowires for Solar Cells)

  • 임영석;강윤묵;김원목;김동환
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2006년도 춘계학술대회
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    • pp.166-169
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    • 2006
  • We fabricated hexagonal copper sulfide $Cu_2S$ nanowires to obtain a larger contact area of $Cu_2S/CdS$ solar cell. Copper sulfide nanowires were grown on Cu foil at room temperature by gas-sol id reaction. The size, density and shape of nanowires seemed to be affected by the change or reaction time temperature, crystallographic orientation of Cu foil, and molar ratio of the mixed gas. We controled the length and the diameter of the nanowires and we obtained suitable nanowire arrays which has fitting size for uniform deposition with n-type CdS. CdS layer was deposited on the nanowire array by electrodeposition and it seemed to be uniform. The $Cu_2S/CdS$ nanowires/CdS junction showed diode characteristics, A large contact area is expected with the $Cu_2S/CdS$ nanowire structure as compared with the $Cu_2S/CdS$ thin film.

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PCVD법에 의한 저마찰 DLC 코팅막 제조 및 특성 평가에 관한 연구 (Synthesis and evaluation of DLC thin film with low friction coefficient prepared by Plasma Chemical Vapor Deposition (PCVD))

  • 이경황;박종원;정재인;양지훈;박영희;허규용
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2009년도 추계학술대회 초록집
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    • pp.177-178
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    • 2009
  • DLC (Diamond-like Carbon) 코팅막은 저마찰, 고경도, 낮은 표면조도 등의 우수한 특성을 갖는 박막 물질로 다양한 산업분야에서 그 코팅막의 활용을 목적으로 응용연구가 활발하게 이루어지고 있다. 본 연구에서는 플라즈마 화학기상증착(PCVD) 공정을 이용하여 바이어스, 진공도, 공정 온도 등의 코팅 조건 변수를 이용하여 DLC 코팅막을 제작하였다. 또한, 코팅막은 공정 조건에 따라 증착속도, 표면 및 단면 조직, 밀착력, 경도, 마찰계수 등의 특성을 평가하였다. 플라즈마 화학기상증착법을 이용한 DLC 코팅막 제조는 상온과 $175^{\circ}C$에서 이루어졌으며, 저온 중 DLC 코팅막 제조가 가능해짐에 따라 고분자 와 같은 저융점을 갖는 피처리물의 코팅처리가 가능하여 산업적 응용의 확대가 기대된다. SEM 표면 조직 관찰에 따른 DLC 코팅막의 표면조직과 조도는 공정조건에 따라 큰 차이는 보이지 않았지만, 밀착력에 있어서는 매우 큰 차이를 나타내었다. 스크래치 시험 결과 가장 높은 밀착력은 100 N 이상을 나타내었으며, 이 때의 마찰계수는 약 0.02를 나타내었다. 가장 낮은 마찰계수는 약 0.01을 보였으며, 이때의 밀착력은 25 N을 나타내었다. 증착속도는 바이어스 전압의 증가에 따라 증가하는 경향을 나타내었으며, 온도의 증가에 따라 감소하는 경향을 나타내었다.

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알루미늄의 발수 표면처리 기술 개발 (Development of Surface Treatment for Hydrophobic Property on Aluminum Surface)

  • 변은연;이승훈;김종국;김양도;김도근
    • 한국표면공학회지
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    • 제45권4호
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    • pp.151-154
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    • 2012
  • A hydrophobic surface has been fabricated on aluminum by two-step surface treatment processes consisting of structure modification and surface coating. Nature inspired micro nano scale structures were artificially created on the aluminum surface by a blasting and Ar ion beam etching. And a hydrophobic thin film was coated by a trimethylsilane ($(CH_3)_3SiH$) plasma deposition to minimize the surface energy of the micro nano structure surface. The contact angle of micro nano structured aluminum surface with the trimethylsilane coating was $123^{\circ}$ (surface energy: 9.05 $mJ/m^2$), but the contact angle of only trimethylsilane coated sample without the micro nano surface structure was $92^{\circ}$ (surface energy: 99.15 $mJ/m^2$). In the hydrophobic treatment of aluminum surface, a trimethylsilane coated sample having the micro nano structure was more effective than only trimethylsilane coated sample without the micro nano structure.