• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.7
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• pp.375-381
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• 2000

In this paper, we described the characterization of High-Tc Superconducting(HTS) microstrip antenna using non-radiating edge feeding technique and reported the microwave properties of HTS antennas with temperature. To do this, we prepared the $YBa_2Cu_3O_{7-x}$ superconducting thin film on MgO substrate using pulse-laser deposition techniques. The HTS microstrip antenna using non-radiating feeding technique was fabricated using chemical wet-etching. Then it was compared with identical antenna patterned with evaporated gold. The diverse measured results have been reported in terms of the input impedance, resonant frequency and return loss. In additional, at around the critical temperature, the effect of kinetic inductance which affect the resonant characteristic of the HTS microstrip antenna was reported.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.354-361
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• 2008

The dielectric characteristics of low-k interlayer dielectric materials was fabricated by plasma enhanced chemical vapor deposition (PECVD). BTMSM precursor was evaporated and introduced with the flow rates from 16 sccm to 25 sccm by 1sccm step in the constant flow rate of 60 sccm $O_2$ in process chamber. Manufactured samples are analyzed components by measuring FT/IR absorption lines. Decomposition each Microscopic structures through two-dimensional correlation analysis about mechanisms for the formation of SiOCH in $SiOCH_3$, Si-O-Si and Si-$CH_3$ bonding group and analyzed correlation between the micro-structure of each group. It is a tendency that seems to be growing of Si-O-Ci(C) bonding group and narrowing of Si-O-$CH_3$ bonding group relative to the increasing flow-rate BTMSM. The order of changing sensitivity about changes of flow-rate in Si-O-Si(C) bonding group is cross link mode$(1050cm^{-1})$ $\rightarrow$ open link mode$(1100cm^{-1})\rightarrow$ cage link mode $(1140cm^{-1})$.

• Journal of Magnetics
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• v.13 no.3
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• pp.88-91
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• 2008

This study examined the effect of Sn co-doping on the transport and magnetic properties of Cr-doped $In_2O_3$ thin films grown on (100) silicon substrates by pulsed laser deposition. The experimental results showed that Sn co-doping enhances the magnetization and appearance of the anomalous Hall effect, and increases the carrier (electron) concentration. These results suggest that the conduction carrier plays an important role in enhancing the ferromagnetism of a laser-deposited Cr-doped $In_2O_3$ film, which may have applications in transparent oxide semiconductor spin electronics devices.

• Journal of Surface Science and Engineering
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• v.39 no.6
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• pp.255-262
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• 2006

Pd-Cu alloy membrane for hydrogen separation was fabricated by sputtering and Cu reflow process. At first, the Pd and Cu was continuously deposited by sputtering method on oxidized Si support, the Cu reflow process was followed. Microstructure of the surface and permeability of the membrane was investigated depending on various reflow temperature, time, Pd/cu composition and supports. With respect to our result, Pd-Cu thin film (90 wt.% Pd/10 wt.% Cu) deposited by sputtering process with thickness of $2{\mu}m$ was heat-treated for Cu reflow The voids of the membrane surface were completely filled and the dense crystal surface was formed by Cu reflow behavior at $700^{\circ}C$ for 1 hour. Cu reflow process, which is adopted for our work, could be applied to fabrication of dense Pd-alloy membrane for hydrogen separation regardless of supports. Ceramic or metal support could be easily used for the membrane fabricated by reflow process. The Cu reflow process must result in void-free surface and dense crystalline of Pd-alloy membrane, which is responsible for improved selectivity oi the membrane.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.1-4
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• 2000

Thin films of hydrogenated amorphous silicon carbide compounds ($a-Si_{x}C_{1-x}:H$) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane (SiH$_4$) and methane ($CH_4$) as the gas precursors at 1 Torr and at a low substrate temperature ($250^{\circ}C$). The gas flow rate was changed with the other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of $a-Si_{x}C_{1-x}:H$films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.814-818
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• 2016

DSSCs (dye-sensitized solar cells) based on $TiO_2/SiO_2$ multi layer AR (anti-reflection) coating on the outer glass FTO (fluorine-doped tin oxide) substrate are investigated. We have coated an AR layer on the surface of a DSSCs device by using an IAD (ion beam-assisted deposition) system and investigated the effects of the AR layer by measuring photovoltaic performance. Compared to the pure FTO substrate, the multi layer AR coating increased the total transmittance from 67.4 to 72.9% at 530 nm of wavelength. The main enhancement of solar conversion efficiency is attributed to the reduction of light reflection at the FTO substrate surface. This leads to the increase of Jsc and the efficiency improvement of DSSCs.

• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.102-107
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• 2010

a-Si solar cell has relatively dominant drift current when compared with crystalline solar cell due to the high internal electric field. Such drift current make an impact on the PV module in the local shading. In this paper, the a-Si PV module output characteristics of shading effects was approached in terms of process condition, because of the different deposition layer of thin film lead to rising the resistance. We suggested design condition to ensure the long-term durability of the module with regard to the degradation factors such as hot spot by analyzing the module specification. The result shows a remarkable difference on module uniformity for each shading position. In addition, the unbalanced power loss due to power mismatch of each module could intensify the degradation.

• Journal of the Korean Magnetics Society
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• v.8 no.5
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• pp.295-299
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• 1998

The magnetic thin films can be prepared without vacuum process and under the low temperature(<100 $^{\circ}C$) by ferrite plating. We have performed ferrite plating of $Ni_xFe_{3-x}O_4$ (x=0.162~0.138) films on cover glass at the substrate temperature 80 $^{\circ}C$ and pH range of the oxidizing solution, 7.1~8.8. the crystal structure of the samples has been identified as a single phase of polycrystal spinel structure by x-ray diffraction technique. The deposition rate and the grain size of the film increased with the pH of oxidizing solution. The coercive force (H_C)$ decreased with the pH of oxidizing solution.