• 한국전기전자재료학회논문지
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• 제26권7호
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• pp.539-544
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• 2013

To study the encapsulation method for heat dissipation of high brightness organic light emitting diode (OLED), red emitting OLED of ITO (150 nm) / 2-TNATA (50 nm) / NPB (30 nm) / $Alq_3$ : 1 vol.% Rubrene (30 nm) / $Alq_3$ (30 nm) / LiF (0.7 nm) / Al (200 nm) structure was fabricated, which on $Alq_3$ (150 nm) / LiF (150 nm) as buffer layer and Al as protective layer was deposited to protect the damage of OLED, and subsequently it was encapsulated using attaching film and metal sheet. The current density, luminance and power efficiency was improved according to thickness of Al protective layer. The emission spectrum and the Commission International de L'Eclairage (CIE) coordinate did not have any effects on encapsulation process using attaching film and metal sheet The lifetime of encapsulated OLED using attaching film and metal sheet was 307 hours in 1,200 nm Al thickness, which was increased according to thickness of Al protective layer, and was improved 7% compared with 287 hours, lifetime of encapsulated OLED using attaching film and flat glass. As a result, it showed the improved current density, luminance, power efficiency and the long lifetime, because the encapsulation method using attaching film and metal sheet could radiate the heat on OLED effectively.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 1994년도 Proceedings of the Korea Automatic Control Conference, 9th (KACC) ; Taejeon, Korea; 17-20 Oct. 1994
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• pp.587-592
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• 1994

To realize artificial device with sensing ability of the human skin, a mono-material tactile sensor with three sensing functions made of some elastic thin electro-conductive rubber sheet with eight latticed patch elements is proposed. This trial sensor provides the information of three kinds of model material characteristics such as thermal property, hardness property and the surface situation of materials by setting up three kinds of surface models as test materials. It can be finally expected to estimate unknown model materials by analyzing the data of the sensor.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1739-1743
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• 2006

Recent advances in the microstructural modification of metal films using excimer laser projection irradiation and lateral resolidification are discussed. Pure copper films have been directionally resolidified into large sheet-like grains when properly encapsulated for suppression of liquid-phase dewetting. A survey and quantitative assessment of the defects found in these icrostructures, typical for rapidly solidified metals, is presented.

• 소성∙가공
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• 제26권3호
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• pp.144-149
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• 2017

In order to characterize the macroscopic mechanical response of ultra-thin (0.1 mm thick) ferritic stainless steel sheet at various loading paths, a crystal plasticity finite element method (CP-FEM) was introduced. The accuracy of the prediction results was validated by comparing with the experimental data. Based on the results, the forming limit diagram (FLD) was predicted using a modified Marchinicak-Kuczinski model coupled to a non-quadratic anisotropic yield function, namely, Yld2000-2d. The predicted FLD was found to be in good agreement with the experimental data.

• Archives of Metallurgy and Materials
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• 제65권3호
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• pp.1011-1014
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• 2020

Ice formed on radome surfaces causes communication disruption due to radio-frequency interference (RFI), which reveals the importance of de-icing systems for radomes. As a radome de-icing application, in this work, carbon nanotube (CNT) thin films were fabricated using a spray-coating method, and influence of process parameters on RF transmittance and electrothermal properties was investigated. With the increase of spraying time, sheet resistance of the fabricated film decreases, which results in a decrease of the RF transmittance and improvement of the heating performance. Also, the de-icing capability of the fabricated CNT film was evaluated at -20℃, and efficient removal of ice under cold conditions was demonstrated.

• 센서학회지
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• 제24권6호
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• pp.364-367
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• 2015

Tin oxide thin films were fabricated on glass substrates by the successive ionic layer adsorption and reaction (SILAR) method at room temperature and ambient pressure. Before measuring their properties, all samples were annealed at $500^{\circ}C$ for 2 h in air. Film thickness increased with the number of cycles; X-ray diffraction patterns for the annealed $SnO_2$ thin films indicated a $SnO_2$ single phase. Thickness of the $SnO_2$ films increased from 12 to 50 nm as the number of cycles increased from 20 to 60. Although the optical transmittance decreased with thickness, 50 nm $SnO_2$ thin films exhibited a high value of more than 85%. Regarding electronic properties, sheet resistance of the films decreased as thickness increased; however, the measured resistivity of the thin film was nearly constant with thickness ($3{\times}10^{-4}ohm/cm$). From Hall measurements, the 50 nm thickness $SnO_2$ thin film had the highest mobility of the samples ($8.6cm^2/(V{\cdot}s)$). In conclusion, optical and electronic properties of $SnO_2$ thin films could be controlled by adjusting the number of SILAR cycles.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.196-203
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• 1995

We presented Tungsten and Tungsten Nitride thin films deposited by RF and DC sputtering. It deposited at various conditions that determining the resistivity and sheet resistivity by stabilizing the basic theory. We investigated properties of the resistivity and sheet resistivity of these films under various conditions, temperature of substrate, flow rate of the argon gas and content of nitrogen from nitrogen-argon mixtures. As the temperature of substrate increased and the flow rate of the argon gas decreased, the resistivities of these films reduced by structural transformation. We found that these resistivities were depend on the temperature of substrate, flow rate and electric power. Very highly resistive tungsten films obtained at 10W RF power. On the contrary, we found that films deposited by DC sputtering, from which very lowly resistive tungsten films were obtained. Tungsten nitride thin films deposited by reactive DC sputtering and the resistivities of these films increased as the content of nitrogen gas increased from nitrogen-argon mixture. And also we found the results show very good agreement, compared with experimental data.

• 한국재료학회지
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• 제29권6호
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• pp.363-370
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• 2019

The recent development of information and communication technologies brings new changes to automobile traffic systems. The most typical example is the advancement of dedicated short range communication(DSRC). DSRC mainly consists of an intelligent transportation system(ITS), an electronic toll collection system(ETCS) and an advanced traveler information system(ATIS). These wireless communications often cause unnecessary electromagnetic waves, and these electromagnetic waves, in turn, cause frequent system malfunction. To solve this problem, an absorber of electromagnetic waves is suggested. In this research, various materials, such as powdered metal and iron oxides, are used to test the possibility for an effective absorption of the unnecessary electromagnetic waves. The various metal powders are made into a thin sheet form by compositing through processing. The electromagnetic characteristics(complex permittivity, complex permeability) of the fabricated sheet are measured. As a result, we achieve -6.5 dB at 940 MHz(77.6 % absorption rate) with a 1.0 mm-thickness electromagnet wave absorber, and -9.5 dB at 940 MHz(88.8 % absorption rate) with a 2.0 mm-thickness absorber.

• 한국재료학회지
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• 제24권3호
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• pp.140-144
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• 2014

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

• 한국재료학회지
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• 제19권9호
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• pp.488-493
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• 2009

Thin films of single-wall carbon nanotubes (SWNT) with various thicknesses were fabricated, and their optical and electrical properties were investigated. The SWNTs of various thicknesses were directly coated in the arc-discharge chamber during the synthesis and then thermally and chemically purified. The crystalline quality of the SWNTs was improved by the purification processes as determined by Raman spectroscopy measurements. The resistance of the film is the lowest for the chemically purified SWNTs. The resistance vs. thickness measurements reveal the percolation thickness of the SWNT film to be $\sim$50 nm. Optical absorption coefficient due to Beer-Lambert is estimated to be $7.1{\times}10^{-2}nm^{-1}$. The film thickness for 80% transparency is about 32 nm, and the sheet resistance is 242$\Omega$/sq. The authors also confirmed the relation between electrical conductance and optical conductance with very good reliability by measuring the resistance and transparency measurements.