• 한국전기전자재료학회논문지
• /
• 제26권1호
• /
• pp.44-48
• /
• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

• 한국광학회지
• /
• 제14권2호
• /
• pp.135-141
• /
• 2003

양의 열광학 계수를 갖는 실리카를 하부클래드 및 코아에 그리고 음의 열광학 계수를 갖는 폴리머를 상부클래드에 적용한 AWG(Arrayed Waveguide Grating) 파장분할 다중화 소자에 대하여 이차원 스칼라 유한차분법(Scalar Finite Difference Method; SFDM)으로 온도의존 특성을 분석한 결과, 클래드의 굴절률을 변화시키거나 실리카 코어 상부에 실리카 박막이 존재하는 구조에서 박막의 두께를 변화시켜 온도의존 특성을 조절할 수 있음을 확인하였다. 이러한 해석결과에 근거하여 폴리머 상부클래드가 적용된 AWG 소자를 제작하였으며 기존의 실리카 AWG 소자와 특성을 비교분석하였다. 폴리머 상부클래드의 도입에 의해 삽입손실 및 크로스톡은 큰 변화가 없었으나 중심파장의 온도의존성은 0.0130 nm/$^{\circ}C$에서 0.0028 nm/$^{\circ}C$ 수준으로 감소하였다.

• 한국진공학회지
• /
• 제19권2호
• /
• pp.141-147
• /
• 2010

$Al_2O_3$, $TiO_2$, $HfO_2$와 같은 high-k (고 유전상수) 산화물 박막을 Si, $SiO_2$/Si, GaAs 기판에 각각 입혀서 주기적인 온도변화에 의해 발생되는 박막 표면에서의 반사율 변화를 이용한 열-반사율법을 이용하여 열전도도를 측정하였다. 그 결과, 약 50nm 두께에서 0.80~1.29 W/(mK)와 같은 높은 열전도도를 가지고 있어 CMOS와 메모리 디바이스와 같은 전자 회로에서 발생되는 열을 효과적으로 방산할 수 있고, 또 미세 입자의 크기에 따라 열전달이 변화하는 것을 확인하였다.

• 한국재료학회지
• /
• 제3권2호
• /
• pp.166-174
• /
• 1993

반도체 소자의 표면 보호용으로 사용되는 상압 CVD 방법에 의한 PSG(Phosposilicate glass)막 및 플라즈마 CVD방법에 의한 PE-SiN(Plasma enhanced CVD S${i_2}{N_4}$)막의 항균열 특성을 알루미늄박막이 증착되어 있는 실리콘 기판위에서 조사했다. 45$0^{\circ}C$에서 30분간으 열처리를 반복하면서 균열 발생 유무 및 그 형태를 조사하여 이러한 균열의 생성을 각 막의 막응력과 관련하여 검토하였다. 이들 박막에서의 균열 발생은 하부 조직인 알루미튬배선과의 열팽창계수차에 의한 것임을 알 수 있었다. PSG막 두께가 증가할수록 인장응력이 증가하여 항균열성이 저하되었다. PSG막의 P농도가 증가할수록 막응력은 압축응력쪽으로 이동하였고 균열 발생은 억제되었다. PE-SiN 막도 높은 압축응력을 갖게 함으로써 항균열성을 향상시킬 수 있었다. 본 실험의 결과로부터 반복 열처리시 균열 발생여부에 대한 실험식을 제시하였다.

• 전기학회논문지
• /
• 제60권2호
• /
• pp.344-348
• /
• 2011

A layer of $TiO_2$ thin film less than ~200nm in thickness, as a blocking layer, was deposited by 13.56 MHz radio frequency magnetron sputtering method directly onto the anode electrode to be isolated from the electrolyte in dye-sensitized solar cells (DSCs). This is to prevent the electrons from back-transferring from the electrode to the electrolyte ($I^-/{I_3}^-$). The presented DSCs were fabricated with working electrode of F:$SnO_2$(FTO) glass coated with blocking $TiO_2$ layer, dye-attached nanoporous $TiO_2$ layer, gel electrolyte and counter electrode of Pt-deposited FTO glass. The effects of blocking layer were studied with respect to impedance and conversion efficiency of the cells. The, electrochemical impedances of DSCs using this electrode were $R_1$: 13.9, $R_2$: 15.0, $R_3$: 10.9 and $R_h$: $82{\Omega}$. The $R_2$ impedance related by electron movement from nanoporous $TiO_2$ to TCO showed lower than that of normal DSCs. The photo-conversion efficiency of prepared DSCs was 5.97% ($V_{oc}$: 0.75V, $J_{sc}$: 10.5 mA/$cm^2$, ff: 0.75) and approximately 1% higher than general DSCs sample.

• 한국정보전자통신기술학회논문지
• /
• 제13권4호
• /
• pp.293-297
• /
• 2020

본 논문은 multiplex deposition sputter system을 이용하여 ITO 유리에 CdS 박막을 증착하여 태양전지에 적용될 수 있는 가장 좋은 조건을 찾고자 하였다. RF power를 50W, 100W, 150W로 변화주었고 스퍼터링시간은 10분으로 하였다. 투과율을 측정한 결과, 400~800 nm 영역에서 평균 투과율은 60%에서 80% 까지 측정되었으며 150W일 때 84%로 가장 좋은 특성이 측정되었다. 또한 밴드갭은 50W일 때 3.762eV, 100W일 때 4.037eV, 150W일 때 4.052eV로 측정되었다. XRD 분석에서는 RF power가 증가하여도 CdS의 구조인 Wurtzite(hexagonal)로 관찰되었다. 그리고 RF power가 증가할수록 입자가 크고 균일하게 증착 되었나, 100W 일 때 입자들이 조밀하게 구성되었고 밀도가 크다는 것을 알 수 있었다. 그리고 두께 측정 결과 RF power 가 증가할수록 균일성 있게 증가되었다.

• 센서학회지
• /
• 제5권5호
• /
• pp.69-77
• /
• 1996

Pt/Cr 이중층과 E-beam으로 증착된 산화막으로 구성된 발열체의 발열특성과 열처리 온도에 따른 Pt/Cr 이중층의 전기적, 구조적 특성을 살펴보았다. E-beam으로 증착된 산화막을 갖는 발열체의 표면 방사율(${\varepsilon}$)은 0.5임을 열전대와 I.R. Thermo-Vision System을 통하여 확인할 수 있었다. 한편 열처리전 Pt/Cr의 면저항은 Cr의 두께와는 무관한데, 이는 백금과 크롬의 계면에 형성된 산화크롬에 의한 것으로 사료되며, 열처리 온도가 증가함에 따라 Cr의 외부확산이 증대되고, Pt(220)면의 결정립이 성장함을 AES 분석결과와 SEM 촬영, XRD 분석을 통하여 알 수 있었다. 열처리 온도에 따른 특성 분석결과, $500^{\circ}C$에서 열처리한 Pt/Cr 이중층이 안정된 결정구조를 갖음을 XRD, AES 분석결과로 확인할 수 있었다.

• 한국표면공학회지
• /
• 제49권3호
• /
• pp.280-285
• /
• 2016

In this study, we investigated the influences of potassium fluoride(KF) addition on the surface characteristics of plasma electrolytic oxidation(PEO) coating produced on Al alloy. The PEO of marine grade Al alloy(5083 grade) was conducted in KOH 1g/L solution adding different concentrations of KF(0, 1 and 2 g/L) under a galvanostatic regime. With KF addition, unusual behavior was observed on the voltage-time characteristic curves, which can be characterized by the following process: (i) initial rapid increase in voltage (ii) a short plateau after 1st breakdown (iii) gradual increase in voltage (iv) intermittent fluctuation of voltage after 2nd breakdown. The SEM observation revealed irregular surface morphology with KF addition, as compared with one formed without KF addition, which had a reticulate structure. The XRD analysis detected the formation of aluminium hydroxide fluoride hydrate($H_{4.76}Al_2F_{3.24}O_{3.76}$) on surface grown by PEO process with KF. Particularly, at very early stage of the process (~ 120 s), thin film was formed having nanoporous structure, and F element was confirmed on surface by EDS analysis. The thickness and surface roughness of the coating increased with increasing KF concentration. As a result, KF addition was found to be less beneficial influences on PEO of marine grade Al alloy, and therefore needs further research to improve its capability.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
• /
• pp.502-502
• /
• 2007

Current thin film process using memory device fabrication process use expensive processes such as manufacturing of photo mask, coating of photo resist, exposure, development, and etching. However, direct printing technology has the merits about simple and cost effective processes because inks are directly injective without mask. And also, this technology has the advantage about fabrication of fine pattern line on various substrates such as PCB, FCPB, glass, polymer and so on. In this work, we have fabricated the fine and thick metal pattern line for the electronic circuit board using metal ink contains Ag nano-particles. Metal lines are fabricated by two types of printing methods. One is a conventional printing method which is able to quick fabrication of fine pattern line, but has various difficulties about thick and high resolution DPI(Dot per Inch) pattern lines because of bulge and piling up phenomenon. Another(Second) methods is sequential printing method which has a various merits of fabrication for fine, thick and high resolution pattern lines without bulge. In this work, conductivities of metal pattern line are investigated with respect to printing methods and pattern thickness. As a result, conductivity of thick pattern is about several un.

• 한국전기전자재료학회논문지
• /
• 제22권10호
• /
• pp.821-825
• /
• 2009

Recently, transparent ZnO-based TFTs have attracted much attention for flexible displays because they can be fabricated on plastic substrates at low temperature. We report the fabrication and characteristics of ZnO TFTs having different channel thicknesses deposited at low temperature. The ZnO films were deposited as active channel layer on $Si_3N_4/Ti/SiO_2/p-Si$ substrates by RF magnetron sputtering at $100^{\circ}C$ without additional annealing. Also, the ZnO thin films deposited at oxygen partial pressures of 40%. ZnO TFTs using a bottom-gate configuration were investigated. The $Si_3N_4$ film was deposited as gate insulator by PE-CVD at $150^{\circ}C$. All Processes were processed below $150^{\circ}C$ which is optimal temperature for flexible display and were used dry etching method. The fabricated devices have different threshold slop, field effect mobility and subthreshold slop according to channel thickness. This characteristics are related with ZnO crystal properties analyzed with XRD and SPM. Electrical characteristics of 60 nm ZnO TFT (W/L = $20\;{\mu}m/20\;{\mu}m$) exhibited a field-effect mobility of $0.26\;cm^2/Vs$, a threshold voltage of 8.3 V, a subthreshold slop of 2.2 V/decade, and a $I_{ON/OFF}$ ratio of $7.5\times10^2$.