• Title/Summary/Keyword: Thin Film Thickness

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A Conductive-grid based EMI Shielding Composite Film with a High Heat Dissipation Characteristic (전도성 그리드를 활용한 전자파 흡수차폐/방열 복합소재 필름)

  • Park, Byeongjin;Ryu, Seung Han;Kwon, Suk Jin;Kim, Suryeon;Lee, Sang Bok
    • Composites Research
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    • v.35 no.3
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    • pp.175-181
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    • 2022
  • Due to the increasing number of wireless communication devices in mmWave frequency bands, there is a high demand for electromagnetic interference (EMI) shielding and heat dissipating materials to avoid device malfunctions. This paper proposes an EMI shielding composite film with a high heat dissipation characteristic. To achieve this, a conductive grid is integrated with a polymer-based composite layer including magnetic and heat dissipating filler materials. A high shielding effectiveness (>40 dB), low reflection shielding effectiveness (<3 dB), high thermal conductivity (>10 W/m·K), thin thickness (<500 ㎛) are simultaneously achieved with a tailored design of composite layer compositions and grid geometries in 5G communication band of 26.5 GHz.

Characteristics of SiO2 Based Asymmetric Multilayer Thin Films for High Performance Flexible Transparent Electrodes (고성능 유연 투명전극용 SiO2 기반 비대칭 다층 박막의 특성)

  • Jeong, Ji-Won;Kong, Heon;Lee, Hyun-Yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.1
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    • pp.25-30
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    • 2020
  • Oxide (SiO2)/Metal(Ag)/Oxide(SiO2, ITO, ZnO) multilayer films were fabricated using a magnetron sputtering technique at room temperature on Si (p-type, 100) and a glass substrate. The electrical and optical properties of the asymmetric multilayer films depended on the thickness of the mid-layer film and the type of oxide in the bottom layer. As the metal layer becomes thicker, the sheet resistance decreases. However, the transmittance decreases when the metal layer exceeds a threshold thickness of approximately 10~12 nm. In addition, the sheet resistance and transmittance change according to the type of oxide in the bottom layer. If the oxide has a large resistivity, the overall sheet resistance increases. In addition, the anti-reflection effect changes according to the refractive index of the oxide material. The optical and electrical properties of multilayer films were investigated using an ultraviolet visible (UV-Vis) spectrophotometer and a 4-point probe, respectively. The optimum structure is SiO2 (30 nm)/Ag (10 nm)/ZnO (30 nm) multilayer, with the highest FOM value of 7.7×10-3 Ω-1.

Poly-4-vinylphenol and Poly (melamine-co-formaldehyde)-based Tungsten Diselenide (WSe2) Doping Method

  • Nam, Hyo-Jik;Park, Hyung-Youl;Park, Jin-Hong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.194.1-194.1
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    • 2015
  • Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

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Surface Analysis of Cold Rolled Steel Sheets by X-ray Photoelectron Spectroscopy (X-ray Photoelectron Spectroscopy를 이용한 냉연 강판의 표면 분석 연구)

  • Lee, Do Hyung;So, Jae Choon
    • Analytical Science and Technology
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    • v.7 no.1
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    • pp.115-124
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    • 1994
  • The corroded surface of cold rolled steel sheet in the process of rinsing after alkali-cleaning was examined by means of X-ray Photoelectron Spectroscopy(XPS). In addition, the surface-treated cold rolled steel with 0.05wt% $Na_5P_3O_{10}$ solution for the purpose of preventing the corrosion was examined by means of XPS and the results were compared with those for the non-treated cold rolled steel. It was found that the corroded surface consists of $Fe_2O_3$, FeO and $Fe(OH)_3$ and the thickness of the oxide layer is about $1500{\AA}$. On the other hand, in the case of surface-treated cold rolled steel, the phosphate layer of $60{\AA}$ thickness was found to act as a protective film over the relatively thin Fe oxide layer.

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Effect of the Thickness and the Annealing Conditions of the Catalytic Ni Films on the Graphene Films Grown by a Rapid-Thermal Pulse CVD (Rapid-Thermal Pulse 화학증착법에 의해 증착된 그래핀 박막에서 촉매금속 Ni의 두께 및 열처리 조건의 영향)

  • Na, Sin-Hye;Yoon, Soon-Gil
    • Korean Journal of Materials Research
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    • v.21 no.2
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    • pp.78-82
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    • 2011
  • Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.

Effect of Deposition Parameters on the Morphology and Electrochemical Behavior of Lead Dioxide

  • Hossain, Md Delowar;Mustafa, Chand Mohammad;Islam, Md Mayeedul
    • Journal of Electrochemical Science and Technology
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    • v.8 no.3
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    • pp.197-205
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    • 2017
  • Lead dioxide thin films were electrodeposited on nickel substrate from acidic lead nitrate solution. Current efficiency and thickness measurements, cyclic voltammetry, AFM, SEM, and X-ray diffraction experiments were conducted on $PbO_2$ surface to elucidate the effect of lead nitrate concentration, current density, temperature on the morphology, chemical behavior, and crystal structure. Experimental results showed that deposition efficiency was affected by the current density and solution concentration. The film thickness was independent of current density when deposition from high $Pb(NO_3)_2$ concentration, while it decreased for low concentration and high current density deposition. On the other hand, deposition temperature had negative effect on current efficiency more for lower current density deposition. Cyclic voltammetric study revealed that comparatively more ${\beta}-PbO_2$ produced compact deposits when deposition was carried out from high $Pb(NO_3)_2$ concentration. Such compact films gave lower charge discharge current density during cycling. SEM and AFM studies showed that deposition of regular-size sharp-edge grains occurred for all deposition conditions. The grain size for high temperature and low concentration $Pb(NO_3)_2$ deposition was bigger than from low temperature and high concentration deposition conditions. While cycling converted all grains into loosely adhered flappy deposit with numerous pores. X-ray diffraction measurement indicates that high concentration, high temperature, and high current density favored ${\beta}-PbO_2$ deposition while ${\alpha}-PbO_2$ converted to ${\beta}-PbO_2$ together with some unconverted $PbSO_4$ during cycling in $H_2SO_4$.

Development of micro check valve with polymer MEMS process for medical cerebrospinal fluid (CSF) shunt system (Polymer MEMS 공정을 이용한 의료용 미세 부품 성형 기술 개발)

  • Chang, J.K.;Park, C.Y.;Chung, S.;Kim, J.K.;Park, H.J.;Na, K.H.;Cho, N.S.;Han, D.C.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2000.05a
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    • pp.1051-1054
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    • 2000
  • We developed the micro CSF (celebrospinal fluid) shunt valve with surface and bulk micromachining technology in polymer MEMS. This micro CSF shunt valve was formed with four micro check valves to have a membrane connected to the anchor with the four bridges. The up-down movement of the membrane made the CSF on & off and the valve characteristic such as open pressure was controlled by the thickness and shape of the bridge and the membrane. The membrane, anchor and bridge layer were made of the $O_2$ RIE (reactive ion etching) patterned Parylene thin film to be about 5~10 microns in thickness on the silicon wafer. The dimension of the rectangular nozzle is 0.2*0.2 $\textrm{mm}^2$ and the membrane 0.45 mm in diameter. The bridge width is designed variously from 0.04 mm to 0.12 mm to control the valve characteristics. To protect the membrane and bridge in the CSF flow, we developed the packaging system for the CSF micro shunt valve with the deep RIE of the silicon wafer. Using this package, we can control the gap size between the membrane and the nozzle, and protect the bridge not to be broken in the flow. The total dimension of the assembled system is 2.5*2.5 $\textrm{mm}^2$ in square, 0.8 mm in height. We could precisely control the burst pressure and low rate of the valve varing the design parameters, and develop the whole CSF shunt system using this polymer MEMS fabricated CSF shunt valve.

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Oxidation and Neutral Electrolytic Pickling Behavior of 304 and 430 Stainless Steels (304 및 430 스테인레스 강판의 산화 및 중성염 전해산세 거동)

  • Kim T. S.;Park Y. T.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2004.08a
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    • pp.285-293
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    • 2004
  • Oxidation behavior of 304 and 430 stainless steel were studied using thin film X-ray analysis and glow discharge spectrum analysis (here-after GDS). The oxidation layer of 304 stainless steel was composed of $Cr_2O_3\;and\;FeCrO_4$ and its thickness was about $1.5{\mu}m$ after $1\~5$ minutes of annealing at $1120^{\circ}C$ open air. However, the oxidation layer of 430 stainless steels was mainly composed of $Cr_2O_3$ and its typical thickness was 0.5um after $1\~5$ minutes of annealing at $1000^{\circ}C$ open air. Electro-chemical analysis revealed that the descaling of oxidation layer could be activated by Fe, Cr dissolution from the matrix behind the oxidation layer at the current density of $5\~10ASD$ and by Fe, Cr-oxide dissolution from the oxidation layer at the current density over than 10ASD. Electrolytic stripping of 430 and 304 revealed the intial incubation period of descaling by oxygen evolving at low current density range such as $5\~10ASD$. However the dissolution of oxide layer was occurred when applying the anodic current of $10\~20ASD$ on 430 and 304 stainless steels. It was suggested that the electrolytic pickling of high Cr bearing stainless steel such as 430 and 304 seemed to be the more effective in the high current density range such as $10\~20ASD$ than the low current density range such as $5\~10ASD$.

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High Power Characteristics of Amorphous $MnO_2$ Electrode by Variation of Electrode Thickness (비정질 $MnO_2$ 전극의 전극두께에 따른 고출력 특성 변화)

  • Seong W. K.;Kim E. S.;Lee H. Y.;Kim S. W.
    • Journal of the Korean Electrochemical Society
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    • v.3 no.4
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    • pp.235-240
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    • 2000
  • Screen-printing and doctor blade method were investigated and proposed as an electrode coating process for high power capacitor. CV measured from the amorphous $MnO_2$ electrode prepared by screen-printing shows closer to ideal capacitor characteristics. Specific capacitances calculated from CVs with potential scan rate of 50mV/s were 5.8, 81.8, and 172.0 F/g for electrode thickness of $140{\mu}m,\;24{\mu}m,\; 3{\mu}m$, respectively. Assumed that utilization of active $MnO_2$ in electrode of screen-printing is $100\%$, those were $3.4\%$ in one of paste method and $47.6\%$ in one of doctor blade method. The screen-printing can be good technique to coat thin film on current collector for high power application.

Water Layer in Course of Corrosion of Copper in Humid Air Containing $SO_2$

  • Sasaki, Takeshi;Itoh, Jun;Ohtsuka, Toshiaki
    • Corrosion Science and Technology
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    • v.2 no.2
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    • pp.88-92
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    • 2003
  • The technique for in situ simultaneous measurements of IR-RAS and QCM, which has been developed for investigation of corrosion in gaseous environments, was employed to study the effects of an extremely thin water layer on the corrosion rate. An evaporated copper film on a QCM element was exposed to air containing water vapor and $SO_2$, and time-resolved IR-RAS spectra were measured and mass gains were simultaneously followed with QCM. The tested ranges of relative humidity (RH) and concentration of $SO_2$ were 60% - 90% and 1 - 20 ppm, respectively. On the basis of 2D-IR analysis, the corrosion products were determined to be Chevreul's salt ($CuSO_3Cu_2SO_3{\cdot}2H_2O$) and $CuSO_4{\cdot}5H_2O$. By constructing curves of the relations between band intensities of IR spectra and mass gains of QCM for the corrosion products, the time variations in each product were determined from spectral experiments on copper plates. The thicknesses of physically adsorbed water layers in course of the corrosion process were also determined from water band intensities. The results showed that the thickness of the physically adsorbed water layer increased with increase in RH, and it also increased with increase in accumulation of corrosion products. The latter is probably due to the capillary effect of the corrosion products.