• Corrosion Science and Technology
• /
• v.20 no.1
• /
• pp.7-14
• /
• 2021

PosMAC^® is a brand of Zn-Mg-Al hot-dip coated steel sheet developed by POSCO. PosMAC^® can form dense surface oxides in corrosive environments, providing advanced corrosion resistance compared to traditional Zn coatings such as GI and GA. PosMAC^® 3.0 is available for construction and solar energy systems in severe outdoor environments. PosMAC^®1.5 has better surface quality. It is suitable for automotive and home appliances. Compared to GI and GA, PosMAC^® shows significantly less weight reduction due to corrosion, even with a lower coating thickness. Thin coating of PosMAC^® provides advanced quality and productivity in arc welding applications due to its less generation of Zn fume and spatters. In repeated friction tests, PosMAC^® showed lower surface friction coefficient than conventional coatings such as GA, GI, and lubricant film coated GA. Industrial demand for PosMAC^® steel is expected to increase in the near future due to benefits of anti-corrosion and robust application performance of PosMAC^® steel.

• Journal of Sensor Science and Technology
• /
• v.28 no.1
• /
• pp.1-6
• /
• 2019

This paper presents an air flow sensor (AFS) based on a polymer thin film. This AFS primarily consists of a polymer membrane attached to a metal-patterned glass substrate and a temperature-sensing element composed of NiCr. These two components were integrated on a single glass substrate. The AFS measures changes in capacitance caused by deformation of the polymer membrane based on the air flow and simultaneously detects the temperature of the surrounding environment. A readout integrated circuit (ROIC) was also fabricated for signal processing, and an ROIC chip, 1.8 mm by 1.9 mm in size, was packaged with an AFS in the form of a system-in-package module. The total size of the AFS is 1 by 1 cm, and the diameter and thickness of the circular-shaped polymer membrane are 4 mm and $15{\mu}m$, respectively. The rate of change of the capacitance is approximately 11.2% for air flows ranging between 0 and 40 m/s.

• Proceedings of the Materials Research Society of Korea Conference
• /
• 2003.03a
• /
• pp.44-44
• /
• 2003

Growth mechanism of carbon nanotubes(CNTs) synthesized by chemical vapor deposition is abided by two growth modes. These growth modes are classified by the position of activated catalytic metal particle in the CNTs. Growth mode can be also affected by interaction between substrate and catalytic metal and induced energy such as thermal and plasma. We studied the reaction of catalytic metal to the substrate and growth mode of CNTs. Various substrates such as Si(100), graphite plate, coming glass, sapphire and AAO membrane are used to study the relation between catalytic metal and substrate in the synthesis of CNTs. For catalytic metal, thin film was deposited on various substrate via sputtering technique with a thickness of ∼20nm and magnetic fluids with none-sized particles were dispersed on AAO membrane. After laying process on AAO membrane, it was dried at 80$^{\circ}C$ for 8 hour. Synthesizing of CNTs was carried out at 900$^{\circ}C$ in NH3/C2H2 mixture gases flow for 10minutes.

• Nuclear Engineering and Technology
• /
• v.56 no.1
• /
• pp.317-327
• /
• 2024

This study investigated the chloride-induced stress corrosion cracking (CISCC) behavior expected to occur in welds of austenitic stainless steel, which are considered candidate materials for dry storage containers for spent nuclear fuel. The behavior was studied by varying temperature, relative humidity (RH), and chloride concentration. 304L-ER308L welded plates were processed into U-bend specimens and exposed to a cyclic corrosion chamber for 12 weeks. The CISCC behavior was then analyzed using electron microscopy. A previous study by the authors confirmed that CISCC occurred in ER308L at 60 ℃, 30% RH, and 0.6 M NaCl via selective corrosion of δ-ferrite. When the temperature was lowered from 60 ℃ to 50 ℃, CISCC still occurred. However, when the humidity was reduced to 20% RH, CISCC did not happen. This can be attributed to the retardation of the deliquescence of NaCl at lower humidity, which was insufficient to promote CISCC. Furthermore, increased chloride concentration to 1.0 M resulted in the absence of CISCC and widespread surface corrosion with severe pitting corrosion because of the increase in thin film thickness.

• Journal of the Microelectronics and Packaging Society
• /
• v.10 no.1
• /
• pp.1-5
• /
• 2003

The multi-layered OELDs(organic electroluminescent devices) were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The $Alq_3$ (tris-(8-hydroxyquinoline)aluminum) low molecule compound was used as the light emission layer. TPD(triphenyl-diamine) and $\alpha-NPD$ were used as the hole transport layer. CuPc (Copper phthalocyanine) was also used as the hole injection layers. In addition, QD2 (quinacridone2) organic material with $10\AA$ thickness was deposited in the $Alq_3$ emission layer to improve the luminance efficiency. The threshold voltage was about 7V for all devices. The luminance and efficiency of devices was improved by substitution the $\alpha-NPD$ for TPD as the hole as the hole transport layer. The luminance efficiency of the OELD sample with QD2 thin film in the $Alq_3$ emission layer was found to be 1.55 lm/W, which is about 8 times larger value compared to the sample without QD2 thin layer.

• 한국신재생에너지학회:학술대회논문집
• /
• 2009.06a
• /
• pp.138-138
• /
• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Journal of the Korean Vacuum Society
• /
• v.12 no.1
• /
• pp.40-45
• /
• 2003

High quality $Ta_2O_5$ thin films have been obtained from the anodization of deposited tantalum (Ta). The as-deposited amorphous films of 750 $\AA$ thickness have excellent electrical properties. These properties include refractive indices 2.1~2.2 dielectric constants ~25, and leakage currents $10^{-8}$ /A$\textrm{cm}^{-2}$ at 1 MV$\textrm{cm}^{-1}$. We fabricated a MIM element with the $Ta_2O_5$ films. They have perfect current-voltage symmetry characteristics. A high performance MIM device was formed by newly developed processes based on our unique anodization and annealing treatment. The effects of various processing conditions (top-electrode metals, annealing conditions) on the MIM device performances will be extensively discussed throughout this work.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
• /
• 2006.10a
• /
• pp.68-71
• /
• 2006

Multi-component $ZnO-In_2O_3-SnO_2$ thin films have been prepared by RF magnetron co-sputtering using targets composed of $In_3Sn_4O_{12}$(99.99%) [1] and ZnO(99.99%) at room temperature. $In_3Sn_4O_{12}$ contains less In than commercial ITO, so that it lowers cost. Working pressure was held at 3 mtorr flowing Ar gas 20 sccm and sputtering time was 30 min. RF power ratio [RF1 / (RFI + RF2)] of two guns in sputtering system was varied from 0 to 1. Each RF power was varied $0{\sim}100W$ respectively. The thickness of the films was $350{\sim}650nm$. The composit ion concentrations of the each film were measured with EPMA, AES and XPS. The low resistivity of $1-2\;{\times}\;10^3$ and an average transmittance above 80% in the visible range were attained for the films over a range of ${\delta}\;(0.3\;{\leq}\;{\delta}\;{\leq}\;0.5)$. The films also showed a high chemical stability with time and a good uniformity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.07b
• /
• pp.787-790
• /
• 2003

A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.26 no.5
• /
• pp.52-59
• /
• 1989

The reliability of the thin thermal oxide was investigated by using constant current stress method. Polysilicon gate MOS capacitors with oxide thickness range of 20-25nm were used in this experiment. Automatic measurement and statistical data analysis which were essential in reliability evaluation of VLSI process preformed by HP 9000 computer. Based on TDDB results, defect density, breakdown charge (Qbd) and lifetime of oxide film were evaluated. According to the polarity of the stress, some different characteristics were shown. Defect density was 62/$cm^2$ at negative gate injection. The value of Qbd was about 30C/$cm^2$ at positive gate injection, and about 21C/$cm^2$ at negative. The current density acceleration factor was 1.43$cm^2$/A for negative gate injection, and 1.25$cm^2$/A for positive gate injection.