• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.100-102
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• 2013

Magnetron-sputtering법을 사용하여 기존에 연구하였던 CrAlN (Cr 7：Al 3)박막에 Si를 첨가하여 Si의 함량 변화에 따라 미세구조와 화학적 결합상태, 온도저항계수(TCR) 및 산화저항의 영향과 기계적특성 개선을 통한 multi-functional heater resistor layer로써의 가능성을 연구하였다. CrAlSiN 박막의 Si 함량에 변화에 따라 온도저항계수 변화를 확인하였으며 X-선 회절 분석(XRD) 패턴 분석결과 CrAlSiN 박막의 결정구조가 Bl-NaCl 구조를 가지고 있는 것을 확인하였으며 SEM과 AFM을 통한 표면 및 미세구조 분석결과 Si의 함량이 증가할수록 입자가 조밀해짐을 알 수 있었다. 최근 digital priting technology의 핵심 기술로 부각되고 있는 inkjet priting technology는 널리 태양전지뿐만 아니라 thin film process, lithography와 같은 반도체 공정 기술에 활용 할 수 있기 때문에 반도체 제조장비에도 사용되고 있으며, 현재 thermal inkjet 방식을 사용하고 있다. Inkjet printing technology는 전기 에너지를 잉크를 배출하기 위해 열에너지로 변환하는 thermal inkjet 방식을 사용하고 있는데, 이러한 thermal inkjet 방식은 기본적으로 전기저항이 필요하지만 electrical resistor layer는 잉크를 높은 온도에서 순간적으로 가열하기 때문에 부식이나 산화 등의 문제가 발생할 수 있어 이에 대한 보호층을 필요로 한다. 하지만, 고해상도, 고속 잉크젯 프린터, 대형 인쇄 등을 요구되고 있어 저 전력 중심의 잉크젯 프린터의 열효율을 방해하는 보호층 제거에 필요성이 제기되고 있다. 본 연구는 magnetron-sputtering을 사용하여 기존의 CrAlN 박막에 Si를 합성하여 anti-oxidation, corrosion resistance 그리고 low temperature coefficient of resistance 값을 갖는 multi-functional heater resistor layer로써 CrAlSiN 박막의 Si 함량에 따른 효과에 초점을 두었다. 본 실험은 CrAlN 박막에 Si 함량을 4~11 at%까지 첨가시켜 함량의 변화에 따른 특성변화를 확인하였다. 함량이 증가할수록 amorphous silicon nitride phase의 영향으로 박막의 roughness는 감소하였으며 XRD 분석결과 (111) peak의 Intensity가 감소함을 확인하였으며 SEM 관찰시 모든 박막이 columnar structure를 나타내었으며 Si함량이 증가할수록 입자가 치밀해짐을 보여주었다.Si함량이 증가할수록 CrAlN 박막에 비하여 면저항은 증가하였으며 TCR 측정결과 Si함량이 6.5 at%일 때 가장 안정한 TCR값을 나타내었다. Multi-functional heater resistor layer 역할을 하기 위해서, CrAlSiN 박막의 원소 분포, 표면 거칠기, 미세조직, 전기적 특성 등을 조사하였다. CrAlN 박막의 Si의 첨가는 크게 XRD 분석결과 주상 성장을 억제 할 수 있으며 SEM 분석을 통하여 Si 함량이 증가할수록 Si3N4 형성이 감소하며 입자크기가 작아짐을 확인하였다. 면저항의 경우 Si 함량이 증가함에 따라 높은 면저항을 나타내었으며 Si함량이 6.5 at%일 때 가장 낮은 TCR 값인 3120.53 ppm/K값을 보였다. 이 값은 상용되고 있는 heater resistor보다 높지만, CrAlSiN 박막이 더 우수한 기계적 특성을 가지고 있기 때문에 hybrid heater resistor로 적용할 수 있을 것으로 기대된다.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.130-137
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• 2008

$La_{0.7}Sr_{0.3}MnO_3$ films were deposited on $SiO_2$/Si and Si substrates annealed at $350^{\circ}C$ by rf magnetron sputtering. The oxygen gas flow rates were varied as 0, 40, and 80 sccm. Without post annealing process, $La_{0.7}Sr_{0.3}MnO_3$ thin films on $SiO_2$/Si and Si substrates were polycrystalline with (100), (110), and (200) growth planes. The grain size of $La_{0.7}Sr_{0.3}MnO_3$ thin films was increased with increasing oxygen gas flow rate. The sheet resistance of $La_{0.7}Sr_{0.3}MnO_3$ thin films was decreased with oxygen flow rate due to the increased grain size which induced a reduction of grain boundary. TCR (temperature coefficient of resistance) values of $La_{0.7}Sr_{0.3}MnO_3$ thin films were obtained from -2.0% to -2.2%.

• Proceedings of the ESK Conference
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• 1995.04a
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• pp.55-61
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• 1995

We spend about 40% of lifte time on a bed and seek how such amount of time is spent comfort. Bed comfort has been pursuited. The pressure distributions on a bed by body pressure has been considered as one of the most important factors of bed comfort. This study is to quantify the subjective assessment by the body pressure distribution and develop the objective evaluation method of bed comfort. A new measurement system for body pressure on a bed was developed in this study. The thin film pressure sensor (FSR: Force Sensing Resistor) of an elastomer-type was used to prevent the distortion of contact pressure. The pressure distribution is measured by FSR and displayed on the monitor by color-coded contour patterns. Some of the bed test results were described. And the relations between body pressure distribution and bed comfort were evaluated.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1506-1508
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• 2001

We have investigated for the modeling and the simulation of the ferroelectric capacitor and MFS TFT (Metal-Ferroelectric-Semiconductor Thin Film transistor). For ferroelectric capacitor modeling, we adopted the equivalent circuit model which consists of a nonlear capacitor, a nonliner resistor, and a linear capacitor. MFS TFT have been modeled by combining the ferroelectric capacitor and Bsim3 MOSFET model. Our simulations show the characteristics of ferroelectric capacitor and MFS TFT.

• Progress in Superconductivity and Cryogenics
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• v.6 no.3
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• pp.50-55
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• 2004

We fabricated and tested a resistive type superconducting fault current limiter (SFCL) of three-phase 6.6 $kV_{rms}/200 A_{rms}$ rating based on YBCO thin films grown on sapphire substrates with a diameter of 4 inches, Short circuit tests were carried out at a accredited test facility for single line-to- ground faults, phase-to-phase faults and three-phase faults, Each phase of the SFCL was composed of 8${\times}$6 elements connected in series and parallel respectively. Each element was designed to have the rated voltage of 600 $V_{rms}$. A NiCr shunt resistor of 23 Ω was connected to each element for simultaneous quenches. Firstly, single phase-to-ground fault tests were carried out. The SFCL successfully developed the impedance in the circuit within 0.12 msec after fault and controlled the fault current of 10 $kA_{rms} below 816 A_{peak}$ at the first half cycle. In addition, in case of phase-to-phase fault and three- phase fault test. simultaneous quenches among the SFCLs of the phases successfully accomplished. In conclusion. the SFCL showed excellent performance of current limitation upon fault and stable operation regardless of the amplitude of fault currents.

• KIEE International Transactions on Electrophysics and Applications
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• v.11C no.3
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• pp.70-74
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• 2001

Admittance or impedance spectroscopy is one of the powerful tools to study dielectric relaxation and loss processes in organic and inorganic materials. In this study, the frequency dependent properties of an indium tin oxide/tris(8-hydroxyquinoline) aluminum($Alq_3$)/aluminum structure have been studied. The conductance of the $Alq_3$ film increases with the DC applied voltage up to 4V and decreases above 4V in the low frequency region. This indicates that the resistance of the device decreases with the applied bias due to the carrier injection enhancement, thereafter the injected carriers form the space charge and the additional injection of carriers is prevented. The Cole-Cole plot of the admittance takes a one-semicircle shape, which means that the device can be modeled as a parallel resistor-capacitor network. The resistance and capacitance were estimated as 8.62k${\Omega}$ and 2.7nF, respectively, at 3V in the low frequency region. The dielectric constant ( ${\epsilon}'$ ) of the $Alq_3$ film is independent of the frequency in the low frequency region below 100kHz, while the frequency dependency was observed at above 100kHz. The dielectric loss factor ( ${\epsilon}"$ ) of the $Alq_3$ film shows the dielectric dispersion below 100kHz and dielectric absorption in higher frequency domain. The dispersion is thought to be related to the hopping process of the carriers. The ${\epsilon}"$ is proportional to the reciprocal of the frequency. The dielectric relaxation time was extracted to about 0.318${\mu}s$ from the dielectric absorption spectrum.

• Journal of electromagnetic engineering and science
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• v.8 no.3
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.272-275
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• 2000

We investigated a resistive superconducting fault current limiter (SFCL) fabricated using YBCO thin films on 2-inch diameter sapphire substrates. Nearly identical SFCL units were prepared and tested. The units were connected in series and parallel to increase the current and voltage ratings. A serial connection of the units showed significantly unbalanced power dissipation between the units. This imbalance was removed by introducing a shunt resistor to the firstly quenched unit. Parallel connection of the units increased the current rating. An SFCL module of 4 units in parallel, each of which has minimum quench current 25 Ap, was produced and successfully tested at a 220 V circuit. From the resistance increase, we estimated that the film temperature increases to 200 K in 5 msec, and 300 K in 120 msec. Successive quenches revealed that this system is stable without degradation in the current limiting capability under such thermal shocks as quenches at 220 V.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1470-1472
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• 2002

3원계 51wt%Ni-4lwt%Cr-8wt%Si 합금 타겟을 가지고 DC/RF 마그네트론 스퍼터를 이용하여 박막저항을 제조하였고, 낮은 저항온도계수(TCR)를 가지는 박막을 만들기 위해 제조공정의 변화에 따른 박막의 미세구조와 전기적인 특성을 조사하였다. 스퍼터링 제조공정 변수로써 DC/RF Power, 반응압력, 기판온도를 변화시켰고, 제조된 박막은 공기중에서 $400[^{\circ}C]$까지 열처리 하였다. 반응압력을 감소시킴에 따라 TCR값은 감소하였고, 기판온도 및 열처리 온도의 증가에 따라 TCR값도 증가하였다. 또한, 비저항은 DC Power에서 $172[{\mu}{\Omega}cm]$, RF인 경우에는 $209[{\mu}{\Omega}cm]$을 나타내었고, 각각 +52, $-25[ppm/^{\circ}C]$의 TCR값을 나타냈다. 이와 같은 결과로부터 제조공정을 변화시킴에 따라 면저항 및 저항온도계수의 제어가 가능함을 알 수 있었다.