• 한국전기전자재료학회논문지
• /
• 제20권4호
• /
• pp.352-356
• /
• 2007

The Ni/Cr/Al/Cu (51/41/4/4 wt%) thin films were deposited by using DC magnetron sputtering method for the application of the resistors having low TCR (temperature coefficients of resistance) and high resistivity from the former printed-results[3]. The TCR values measured on the as-deposited thin film resistors were less than ${\pm}10\;ppm/^{\circ}C$ and $-6{\sim}+1\;ppm/^{\circ}C$ after annealing and packaging process. The TCR values were $-3{\sim}1\;ppm/^{\circ}C$ (ratio of variation : about 0.02 %) and $-30{\sim}20\;ppm/^{\circ}C$ (ratio of variation : about $0.5{\sim}1\;%$) for the thermal cycling and PCT (pressure cooker test), respectively. It was confirmed that the reliability properties of the thin film resistor were good for electronic components.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
• /
• pp.782-784
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposition because In and Sb has been very different feature of vapor pressure($10^4$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
• /
• pp.370-374
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure ($10^{-4}$ times) When In and Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
• /
• pp.128-132
• /
• 2002

Many compound semiconductors which have high carrier mobility and small band gap have attentive in application of various practical a field. Especially, InSb served for Hall device and magnetic resistor such as magnetic sensor because InSb thin film has high mobility. Many studies on InSb thin film deposistion because In and Sb has been very different feature of vapor pressure($10^{-4}$ times) When In and. Sb deposited. In this paper studied it In and Sb deposited simultaneously using by method of co-sputtering deposotion. This process, get to effects of manufacture process simplification. After that this paper observed micro structure and electronic behavior of InSb thin film using by co-sputtering and we study properties of magneto-resistance by annealing

• 한국진공학회지
• /
• 제6권1호
• /
• pp.77-84
• /
• 1997

DC Magnetron Sputtering 방법으로 원기둥형 Alumina기판(직경 4mm, 길이 11mm) 상에 부(-)의 TCR특성의 TaN0.1(부도체)와 정(+)의 TCR특성의 Cr(금속)박막두께를 적절히 조절하므로써 초정밀 저항기를 제조하였다. 그리고 면저항(Rs)을 1k$\Omega$/수준으로 높이고 보 호막을 형성키 위하여 상부에 $Ta_2O_5$막을 입형 $Ta_2O_5/TaN_{0.1}/Cr/Al_2O_3$(substrate)의 다층 박 막저항체를 제조하였다. 적절한 조건(기판온도, $N_2$(g), Ar(g)의 유속 등)으로 상기 다층박막 내 각 막의 두께를 약10,100과 500nm두께로 증착했을 때, $Rs\approx 1k\Omega/\Box$와 $TCR\approx 20$\pm 5ppm/^{\circ}C$ 의 초정밀 저항체가 제조되었다.

• 한국진공학회지
• /
• 제16권6호
• /
• pp.439-445
• /
• 2007

RF 및 고속 아날로그 특성 및 제조 공정의 용이성에 의하여 고속 유무선통신 및 초고주파 분야에서 많이 이용되고 있는 SiGe 집적회로에서, SiGe 박막 저항기의편차를 줄여 집적회로의 신뢰성을 높이는 것이 중요하다. 본 논문에서는 실리콘계 박막 저항기 제조 후 발생하는 불균일한 저항 값 분포의 원인 규명과 그 해결 방안에 대하여 고찰한다. SiGe 박막 저항기의 실리사이드가 존재하는 컨택 영역에서 Ti-B석출물의 영향으로 인하여 저항 값의 불균일성 발생하는데, 이를 최소화하기 위하여는 가능한 최대의 boron 이온을 주입할 필요가 있다. SiGe 저항기와 금속을 배선하기 위한 컨택 홀의 크기가 작을수록 SiGe 층 내에서 돌출부가 컨택 홀의 전체면적을 차지하게 될 확률이 커지게 되어 접촉저항이 비정상적으로 커질 확률 또한 높아지게 되므로, 돌출부가 생성되는 SiGe 저항기의 경우는 컨택 홀의 면적을 크게하여 SiGe 저항기의 편차를 개선하였다.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 하계학술대회 논문집
• /
• pp.809-812
• /
• 2001

We were fabricated of NiCr thin film resistors on A1$_2$O$_3$and SiO$_2$/Si substrates by dc magnetron sputtering system. The AC characteristics of resistors were studied. The cut-off frequency were found >10 MHz for the resistors with 39 ohm value of Alumina substrates, but the cut-off frequency were found 400 kHz for the resistors with 168 ohm value of SiO$_2$/Si substrates. In high frequency applications, the substrate selection is the most important factor.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.126-126
• /
• 2012

In past decades, the themal inkjet (TIJ) printer has been widely used as one of the most well-known digital printing technology due to its low cost, and high printing quality. Since the printing speed of TIJ printers are much slower than that of laser printers, however, there has been intensive efforts to raise the printing speed of TIJ printers. One of the most plausible methods to raise the printing speed of TIJ printers is to adopt a page-wide array TIJ printhead. To accomplish this goal, the high efficiency inkjet heating resistor films should be developed to settle the high power consumption problem of a page-wide array TIJ printhead. In this study, we investigated noble metal based multicomponent thin film resistor films prepared by atomic layer deposition (ALD) for a high efficiency inkjet printhead. Design concept, preparation, material properties of noble metal based multicomponent thin films will be discussed in terms of mutlfunctionality.

• 한국통신학회:학술대회논문집
• /
• 한국통신학회 1983년도 춘계학술발표회논문집
• /
• pp.45-47
• /
• 1983

In integrated circuit, for a saving in total chip area per circuit, stably high value resistor was fabricated. Hence this paper explained that the measurement and fabrication of high value semiconductor resistor using ITO thin film. It is also used special material and new method fabrication.

• 한국재료학회:학술대회논문집
• /
• 한국재료학회 1992년도 춘계학술발표회
• /
• pp.78-78
• /
• 1992