• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.110-114
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• 2011

Polymeric films of high chemical stability and mechanical strength covered with a thin metallic film have been extensively used in various fields as electric and electronic materials. In this study, we have chosen polypropylene (PP) as the polymer due to its outstanding chemical resistance and good creep resistance. We coated thin nickel film on PP films by the electroless plating process. The surfaces of PP films were pre-treated and modified to increase the adhesion strength of metal layer on PP films, prior to the plating process, by an environment-friendly process with atmospheric plasma generated using dielectric barrier discharges in air. The surface morphologies of the PP films were observed before and after the surface modification process using a scanning electron microscope (SEM). The static contact angles were measured with deionized water droplets. The cross-sectional images of the PP films coated with thin metal film were taken with SEM to see the combined state between metallic and PP films. The adhesion strength of the metallic thin films on the PP films was confirmed by the thermal shock test and the cross-cutting and peel test. In conclusion, we made a composite material of metallic and polymeric films of high adhesion strength.

• Current Photovoltaic Research
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• 제7권2호
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• pp.33-37
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• 2019

In this paper, we compared the performance of $Cu(In,Ga)(S,Se)_2$ (CIGSSe) thin film solar cell with CdS buffer layer deposited by irradiating 365 nm UV light with 8 W power in Chemcial Bath Deposition (CBD) process. The effects of UV light irradiation on the thin film deposition mechanism during CBD-CdS thin film deposition were investigated through chemical and electro-optical studies. If the UV light is irradiated during the solution process, the hydrolysis of Thiourea is promoted even during the same time, thereby inhibiting the formation of the intermediate products developed in the reaction pathway and decreasing the pH of the solution. As a result, it is suggested that the efficiency of the CdS/CIGSSe solar cell is increased because the ratio of the S element in the CdS thin film increases and the proportion of the O element decreases. This is a very simple and effective approach to control the S/O ratio of the CdS thin film by the CBD process without artificially controlling the process temperature, solution pH or concentration.

• 한국진공학회지
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• 제12권3호
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• pp.168-173
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• 2003

유리 기판 위에 증착된 비정질 실리콘 박막의 고상 결정화에 대한 새로운 방법을 제시하였다. 비정질 실리콘 박막의 하부에 패턴 된 다양한 크기의 $TiSi_2$ 박막을 전기저항 가열 방식으로 가열함으로서 비정질 실리콘이 고상 결정화 되도록 하였다. 박막히터를 이용한 열처리는 매우 빠른 열처리 공정으로써, 일반적인 로에 의한 열처리에 비해 매우 낮은 thermal budget을 가지므로, 유리기판 위에서도 고온 열처리가 가능하다는 장점을 가진다. 본 연구에서는 500 $\AA$의 비정질 실리콘 박막을 약 $850^{\circ}C$ 이상의 높은 온도에서 수 초 내에 결정화 할 수 있음을 보였으며, 열처리 조건의 변화에 따른 영향과 지역선택성의 장점을 보였다.

• 한국정밀공학회지
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• 제26권10호
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• pp.74-80
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• 2009

This paper presents a study on fluid flow analysis of organic semiconductor thin film deposition process using the computational numerical method. In the production process, the thickness of deposited organic thin film depends on distribution of nozzle size in the linear cell system, so we analyze to decide the optimal nozzle system for uniform thickness of organic thin film. The results of deposited thickness of thin film by numerical analysis are in good agreement with those of the experimental measurements.

• 한국전기전자재료학회논문지
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• 제16권2호
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• pp.138-143
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• 2003

A double spiral thin-film inductor with a NiFe magnetic core is integrated with DC-DC converter IC. The NiFe core is deposited on a polyimide film as the thinckness of NiFe is 2.5~3.5 ${\mu}$m. Then, copper conductor line is deposited on the NiFe core with double spiral structure. Process integration is performed by sequential processes of etching the polyimide film deposited both top and bottom of the NiFe core and electroplation copper conductor line from exposed metal pad of the DC-DC converter IC. Process integration is simplified by elimination planarization process for top core because the proposed thin-film inductor has a bottom NiFe core only. Inductor of the fabricated monolithic DC-DC converter IC is 0.53 ${\mu}$H when the area of converter IC and thin-film inductor are 5X5$\textrm{mm}^2$ and 3.5X2.5$\textrm{mm}^2$, respectively. The efficiency is 72% when input voltage and output voltage are 3.5 V and 6 V, respectively at the operation frequency of 8 MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.356-356
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• 2007

Plasma immersion ion beam deposition (PIIBD) technique is a cost-effective process for the deposition of diamond like carbon thin film, the possible solid lubricant on large surface and a complex shape. We used PIIB process for the preparation of DLC thin film on $Al_2O_3$ with deposition conditions of deposition temperature range $200^{\circ}C$, working gas pressure of 1.310-1Pa. DLC thin films were coated by $C_2H_2$ ion beam deposition on $Al_2O_3$ after the ion bombardment of SiH4 as the bonding layer. Energetic bombardment of $C_2H_2$ ions during the DLC deposition to ceramic materials generated mixed layers at the DLC-Si interface which enhanced the interface to be highly bonded. Wear test showed that the low coefficient of friction of around 0.05 with normal load 2.9N and proved the advantage of the low energy ion bombardment in PIIBD process which improved the tribological properties of DLC thin film coated alumina ceramic. Furthermore, PIIBD was recognized as a useful surface modification technique for the deposition of DLC thin film on the irregular shape components, such as molds, and for the improvement of wear and adhesion problems of the DLC thin film, high temperature solid lubricant.

• 한국재료학회지
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• 제29권11호
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• pp.709-714
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• 2019

In order to observe the microstructure and morphology of porous titanium -oxide thin film, deposition is performed under a higher Ar gas pressure than is used in the general titanium thin film production method. Black titanium thin film is deposited on stainless steel wire and Cu thin plate at a pressure of about 12 Pa, but lustrous thin film is deposited at lower pressure. The black titanium thin film has a larger apparent thickness than that of the glossy thin film. As a result of scanning electron microscope observation, it is seen that the black thin film has an extremely porous structure and consists of a separated column with periodic step differences on the sides. In this configuration, due to the shadowing effect, the nuclei formed on the substrate periodically grow to form a step. The surface area of the black thin film on the Cu thin plate changes with the bias potential. It has been found that the bias of the small negative is effective in increasing the surface area of the black titanium thin film. These results suggest that porous titanium-oxide thin film can be fabricated by applying the appropriate oxidation process to black titanium thin film composed of separated columns.

• Transactions on Electrical and Electronic Materials
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• 제11권1호
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• pp.33-36
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• 2010

$MgF_2$ is a current material used for optical applications in the ultraviolet and deep ultraviolet range. Process variables for manufacturing $MgF_2$ thin film were established in order to clarify the optimum conditions for the growth of the thin film, dependant upon the process conditions, and then by changing a number of the vapor deposition conditions, substrate temperatures, and heat treatment conditions, the structural and optical characteristics were measured. Then, optimum process variables were thus derived. Nevertheless, modern applications still require improvement in the optical and structural quality of the deposited layers. In the present work, in order to understand the composition and microstructure of $MgF_2$, single layers grown on a slide glass substrate using an Electron beam Evaporator (KV-660), were analyzed and compared. The surface substrate temperature, having an effect on the quality of the thin film, was changed from $200^{\circ}C$ to $350^{\circ}C$ at intervals of $50^{\circ}C$. The heat treatment temperature, which also has an effect on the thin film, was changed from $200^{\circ}C$ to $400^{\circ}C$ at intervals of $50^{\circ}C$. The physical properties of the thin film were investigated at various fabrication conditions, such as the substrate temperature, the heat treatment temperature, and the heat treatment time, by X-ray diffraction, and field emission-scanning electron microscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.286-290
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• 2020

The formation of inorganic thin films in low-temperature solution processes is necessary for a wide range of commercial applications of organic electronic devices. Aluminum oxide thin films can be utilized as barrier films that prevent the deterioration of an electronic device due to moisture and oxygen in the air. In addition, they can be used as the gate insulating layers of a thin film transistor. In this study, aluminum oxide thin film were formed using two methods simultaneously, a thermal process and the DUV process, and the properties of the thin films were compared. The result of converting aluminum nitrate hydrate to aluminum oxide through a hybrid process using a thermal treatment and DUV was confirmed by XPS measurements. A film-based a-IGZO TFT was fabricated using the formed inorganic thin film as a gate insulating film to confirm its properties.