• Journal of the Korean Society for Heat Treatment
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• v.30 no.1
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• pp.13-16
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• 2017

$SnO_2$ single layer films and 2 nm thick Ni thin film intermediated $AZO/Ni/SnO_2$ trilayer films were deposited on glass substrate at room temperatures by RF and DC magnetron sputtering and then the optical and electrical properties of the films were investigated to enhance opto-electrical performance of $SnO_2$ single layer films. As deposited $SnO_2$ films show the optical transmittance of 81.8% in the visible wavelength region and a resistivity of $1.2{\times}10^{-2}{\Omega}cm$, while $AZO/Ni/SnO_2$ films show a lower resistivity of $5.8{\times}10^{-3}{\Omega}cm$ and an optical transmittance of 77.1% in this study. Since $AZO/Ni/SnO_2$ films show the higher figure of merit than that of the $SnO_2$ single layer films, it is supposed that the $AZO/Ni/SnO_2$ films can assure high opto-electrical performance for use as a transparent conducting oxide in various display applications.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.9
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• pp.1615-1622
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• 2008

We have fabricated the poly-silicon thin film transistor(TFT) which has the LDD-region with graded spacer. The devices of n-channel poly-si TFT's hydrogenated by $H_2$ and $H_2$/plasma processes were fabricated for the devices reliability. We have biased the devices under the gate voltage stress conditions of maximum leakage current. The parametric characteristics caused by gate voltage stress conditions in hydrogenated devices are investigated by measuring/analyzing the drain current, leakage current, threshold voltage($V_{th}$), sub-threshold slope(S) and transconductance($G_m$) values. As a analyzed results of characteristics parameters, the degradation characteristics in hydrogenated n-channel polysilicon TFT's are mainly caused by the enhancement of dangling bonds at the poly-Si/$SiO_2$ interface and the poly-Si grain boundary due to dissolution of Si-H bonds. The structure of novel proposed poly-Si TFT's are the simplicities of the fabrication process steps and the decrease of leakage current by reduced lateral electric field near the drain region.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.657-663
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• 2011

This study represents the results of the peel strength and surface morphology according to the preprocessing times of polyimide (PI) in a Cu/Ni/PI structure flexible copper clad laminate production process based on the polyimide. Field emission scanning electron microscopy, X-ray diffraction, and X-ray photoelectron spectroscopy were used to analyze the surface morphology, crystal structure, and interface binding structure of sputtered Ni, Cu, and electrodeposited copper foil layers. The surface roughness of Ni, Cu deposition layers and the crystal structure of electrodeposited Cu layers were varied according to the preprocessing times. In the RF plasma times that were varied by 100-600 seconds in a preprocessing process, the preprocessing applied by about 300-400 seconds showed a homogeneous surface morphology in the metal layers and that also represented high peel strength for the polyimide. Considering the effect of peel strength on plastic deformation, preprocessing times can reasonably be at about 400 seconds.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.18 no.4
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• pp.100-108
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• 2019

In this paper, a new stacked element pressure sensor has proposed for heartbeat and respiration measurement. This device can be directly attached to an individual's chest; heartbeat and respiration are detected by the pulsatile vibration and deformation of the chest. A key feature of the device is the simultaneous measurement of heart rate and respiration. The structure of the sensor consists of two stacked elements, in which one element includes one polyvinylidene fluoride (PVDF) thin film bonded on polydimethylsiloxane (PDMS) substrate. In addition, for the measurement and signal processing, the electric circuit and the filter are simply constructed with an OP-amp, resistance, and a capacitor. One element (element1, PDMS) maximizes the respiration signal; the other (element2, PVDF) is used to measure heartbeat. Element1 and element2 had sensitivity of 0.163V/N and 0.209V/N, respectively, and element2 showed improved characteristics compared with element1 in response to force. Thus, element1 and element2 were optimized for measuring respiration heart rate, respectively. Through mechanical and vivo human tests, this sensor shows the great potential to optimize the signals of heartbeat and respiration compared with commercial devices. Moreover, the proposed sensor is flexible, light weight, and low cost. All of these characteristics illustrate an effective piezoelectric pressure sensor for heartbeat and respiration measurements.

• Applied Chemistry for Engineering
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• v.32 no.3
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• pp.229-236
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• 2021

During the last two decades, metal-organic frameworks (MOFs) have been drawn attention due to their high specific surface area, porosity, and catalytic activities that allow to use in many applications such as sensor, catalysis, energy storage, etc. To synthesize MOFs hydrothermal or solvothermal method were generally used. However, these methods require high-cost equipment and long time-spend for the synthesis with multi-step process. In contrast, electrochemical synthesis has been considered as a simple and easy process under the ambient conditions. In this review, we described the mechanism of electrochemical MOFs synthesis by the number of configured electrodes system, with the recent reports of various applications.

• Membrane Journal
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• v.31 no.3
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• pp.170-183
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• 2021

Fouling has continued to be a problem that hinders the effectiveness of membrane properties. To solve this problem of reducing fouling effects on membrane surface properties, different and innovative types of membrane patterning has been proposed. This article reviews on the progress of patterned membranes and their separation process concerning the fouling effects of membranes. The types of separation processes that utilize the maximum effectiveness of the patterned membranes include nanofiltration (NF), reverse osmosis (RO), microfiltration (MF), ultrafiltration (UF), and pervaporation (PV). Using these separation processes have shown and prove to have a major effect on reducing fouling effects, and in addition, they also add beneficial properties to the patterned membranes. Each patterned membrane and their separation processes gave notable results in threshold towards flux, salt rejections, hydrophilicity and much more, but there are also some unsolved cases to be pointed out. In this review, the effects of patterned membrane for separation processes will be discussed.

• Membrane Journal
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• v.32 no.6
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• pp.390-400
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• 2022

Nanofiltration (NF) membranes are more popular than reverse osmosis (RO) membranes as they can be operated at much lower pressures for applications in treatment of wastewater from industries like food processing and pharmaceutical as well as municipal sewage water. The separation mechanism in case of NF membranes is based on solution diffusion as well as sieving, for which the crosslinking density of the thin film of the composite membrane is less then RO membrane. Unlike ceramic membranes, membrane fouling is one of the chronic problems that occur during the nanofiltration process in polymeric membranes. Membrane cleaning is done to get rid of reversible as well as irreversible fouling by treatment with sodium hypochlorite. Compared to polymeric membranes, ceramic membranes show higher stability against these agents. In this review different types of ceramic membrane applied wastewater treatment by NF process are discussed.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.6
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• pp.1099-1103
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• 2007

TFT's have been intensively researched for possible electronic and display applications. Through tremendous engineering and scientific efforts, a-Si:H TFT fabrication process was greatly improved. In this paper, the reason on defects occurring at a-Si:H TFT fabrication process is analyzed and solved, so a-Si:H TFT's yield is increased and reliability is improved. The a-Si:H TFT of this paper is inverted staggered type TFT. The gate electrode is formed by patterning with length of $8{\mu}m{\sim}16{\mu}m$ and width of $80{\sim}200{\mu}m$ after depositing with gate electrode (Cr). We have fabricated a-SiN:H, conductor, etch-stopper and photo-resistor on gate electrode in sequence, respectively. We have deposited n+a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-slower pattern. The NPR layer by inverting pattern of upper Sate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. The a-Si:H TFT made like this has problems at photo-lithography process caused by remains of PR. When sample is cleaned, this remains of PR makes thin chemical film on surface and damages device. Therefor, in order to improve this problem we added ashing process and cleaning process was enforced strictly. We can estimate that this method stabilizes fabrication process and makes to increase a-Si:H TFT's yield.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.38-44
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• 2015

This review article summarizes the recent progress of quantum dot (QD)-sensitized solar cells based on mesoporous $TiO_2$ thin films. From the intrinsic characteristics of nanoscale inorganic QDs with various compositions, it was possible to construct a variety of 3rd-generation thin film solar cells by solution process. Depending on preparation methods, colloidal QD sensitizers are pre-prepared for later deposition onto the surface of $TiO_2$ or in-situ deposition of QDs from chemical bath is done for direct growth of QD sensitizers over substrates. Recently, colloidal QD sensitizers have shown an overall power conversion efficiency of ~7% by a very precise control of composition while a representative CdS/CdSe from chemical bath deposition have done ~5% with polysulfide electrolytes. In the near future, it is necessary to carry out systematic investigations for developing new hole-conducting materials and controlling interfaces within the cell, thus leading to an enhancement of both open-circuit voltage and fill factor while keeping the current high value of photocurrents from QDs towards more efficient and stable QD-sensitized solar cells.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.63-74
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• 1994

The ultrathin oxide films less than 100$\AA$ were grown by thermal oxidation in $N_2O$ ambient to improve the controllability of thickness, thickness uniformity, process reproducibility and their electrical properties. Oxidation rate was reduced significantly at very thin region due to the formation of oxynitride layer in $N_2O$ ambient and moreover nitridation of the oxide layer was simultaneously accompanied during growth. The nitrogen incorporation in the grown oxide layer was characterized with the wet chemical etch-rate and ESCA analysis of the grown oxide layer. All the oxides thin films grown in $N_2O$, pure and dilute $O_2$ ambients show Fowler-Nordheim electrical conduction. The electrical characteristics of thin oxide films grown in $N_2O$ such as leakage current, electrical breakdown, interface trap density generation due to the injected electron and reliability were better than those in pure or dilute ambient. These improved properties can be explained by the fact that the weak Si-0 bond is reduced by stress relaxation during oxidation and replacement by strong Si-N bond, and thus the trap sites are reduced.