• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.826-831
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• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• 한국재료학회지
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• 제30권5호
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• pp.262-266
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• 2020

In this paper, we investigated the effect of the passivation stack with Al₂O₃, hydrogenated silicon nitride (SiN_x:H) stack and Al₂O₃, silicon oxynitride (SiON_x) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiON_x films were deposited by plasma enhanced chemical vapor deposition on the Al₂O₃ thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiN_x:H with Al₂O₃ stack is 10 mV higher in implied open circuit voltage and 60 ㎲ higher in minority carrier lifetime than SiON_x with Al₂O₃ stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al₂O₃/Si interface and Al₂O₃ layer of laser damaged area during annealing.

• 한국재료학회지
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• 제15권7호
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• pp.458-464
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• 2005

In microelectronics packaging, the reliability of the metal/polymer interfaces is an important issue because the adhesion strength between dissimilar materials is often inherently poor. The modification of polymer surfaces by ion beam irradiation and rf plasma is commonly used to enhance the adhesion strength of the interface. T-peel strengths were measured using a Cu/polyimide system under varying $N_2^+$ ion beam irradiation conditions for pretreatment. The measured T-peel strength showed reversed camel back shape regarding the fixed metal-layer thickness, which was quite different from the results of the 90° peel test. The elementary analysis suggests that the variation of the T-peel strength is a combined outcome of the plastic bending work of the metal and polymer strips. The results indicate that the peel strength increases with $N_2^+$ ion beam irradiation energy at the fixed metal-layer thickness.

• 한국표면공학회지
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• 제32권3호
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• pp.428-432
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• 1999

As metallic surface has its unique lustrous appearance and optical reflectance in visible range of light, the metallization of plastic surface has been an essential drive toward weight reduction for fuel economy and decorations in transportation industry and has been put into practiced from wet chemical-electrochemial to dry vacuum process in view of an environmental effect. Electron-beam metallization was used in this work with an aim at improving the scratchproof surface hardness of plastic substrate with metallic finish character. Thin film of Al ($1000\AA$) and $SiO_2$($7000\AA$) were metallized on substrate of PC and PMMA and the films were evaluated by pencil test for surface hardness and by cross-cut tape test for adhesion. The ion beam treatment improved around twice as hard as non-treat surface. The ion beam is effect on its hardness and adhesion to surface hardened PC substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.210-213
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• 2004

The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. Memory switching in chalcogenides is mostly a thermal process, which involves phase transformation from amorphous to crystalline state. The nonvolatile memory cells are composed of a simple sandwich (metal/chalcogenide/metal). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.1184-1187
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• 2003

Electrochemical capacitors are becoming attractive energy storage systems particularly for applications involving high power requirements such as hybrid systems consisting of batteries and electrochemical capacitors for electric vehicle propulsion. A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. We established Process Parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured CNFs electrodes using controlled solution chemistry. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency.

• Macromolecular Research
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• 제16권3호
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• pp.247-252
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• 2008

Lithium gel electrolytes based on a mixed polymer matrix consisting of poly(vinylidenefluoride-hexafluoropropylene) (PVDF-HFP) and cyanoresin type M (CRM) were prepared using an in situ blending process. The CRM used in this study was a copolymer of cyanoethyl pullulan and cyanoethyl poly(vinyl alcohol) (PVA) with a mole ratio of 1:1. The mixed plasticizer was ethylene carbonate (EC) and propylene carbonate (PC) with a volume ratio of 1:1. In this study, the presence of PVDF in the electrolytes helps to form a dimensionally stable film over a broad composition range, and decreases the viscosity. In addition, it provides better rheological properties that are suitable for the extrusion of thin films. However, the presence of HFP has a positive effect on generating an amorphous domain in a crystalline PVDF structure. The ionic conductivity of the polymer electrolytes was investigated in the range 298-333 K. The introduction of CRM into the PVDF-HFP/$LiPF_6$, complex produced a PVDF-HFP/CRM/$LiPF_6$ complex with a higher ionic conductivity and improved thermal stability and dynamic mechanical properties than a simple PVDF-HFP/$LiPF_6$, complex.

• Advances in materials Research
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• 제2권4호
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• pp.181-193
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• 2013

Description and theory of spin coating technique has been elaborately outlined and a spin coating machine designed and fabricated using affordable components. The system was easily built with interdisciplinary knowledge of mechanics, fluid mechanics and electronics. This equipment employs majorly three basic components and two circuit units in its operation. These include a high speed dc motor, a proximity sensor mounted at a distance of about 15 mm from a reflective metal attached to the spindle of the motor to detect every passage of the reflective metal at its front and generate pulses. The pulses are transmitted to a micro-controller which process them into rotational speed (revolution per minute) and displays it on a lead crystal display (LCD) which is also a component of the micro-controller. The circuit units are a dc power supply unit and a PWM motor speed controlling unit. The various components and circuit units of this equipment are housed in a metal casing made of an 18 gauge black metal sheet designed with a total area of 1, $529.2cm^2$. To illustrate the use of the spin-coating system, ZnO sol-gel films were prepared and characterized using SEM, XRD, UV-vis, FT-IR and RBS and the result agrees well with that obtained from standard equipment and a speed of up to 9000 RPM has been achieved.

• Journal of the Optical Society of Korea
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• 제17권1호
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• pp.1-4
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• 2013

For the conventionally polished fused silica substrate, an around 100 nm depth redeposition polishing layer was formed on the top of surface. Polishing compounds, densely embedded in the redeposition polishing layer were the dominant factor that limited the laser induced damage threshold (LIDT) of transmission elements in nanosecond laser systems. Chemical etching, super-precise polishing and ion beam etching were employed in different ways to eliminate these absorbers from the substrate. After that, Antireflection (AR) coatings were deposited on these substrates in the same batch and then tested by 1064 nm nano-pulse laser. It was found that among these techniques only the ion beam etching method, which can effectively remove the polishing compound and did not induce extra absorbers during the disposal process, can successfully improve the LIDT of AR coatings.

• 반도체디스플레이기술학회지
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• 제16권3호
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• pp.1-7
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• 2017

Multi-wafer planetary type chemical vapor deposition reactors are widely used in thin film growth and suitable for large scale production because of the high degree of growth rate uniformity and process reproducibility. In this study, a two-dimensional model for estimating the effect of the gap between satellite and wafer on the wafer surface temperature distribution is developed and analyzed using computational fluid dynamics technique. The simulation results are compared with the results obtained from an analytical method. The simulation results show that a drop in the temperature is noticed in the center of the wafer, the temperature difference between the center and wafer edges is about $5{\sim}7^{\circ}C$ for all different ranges of the gap, and the temperature of the wafer surface decreases when the size of the gap increases. The simulation results show a good agreement with the analytical ones which is based on one-dimensional heat conduction model.