• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.66.1-66.1
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• 2012

Although all printed cost-less radio frequency identification (RFID) tags have been considered as a core tool for bringing up a ubiquitous society, the difficulties in integrating thin film transistors (TFTs), diodes and capacitors on plastic foils using a single in-line printing method nullify their roles for the realization of the ubiquitous society1,2. To prove the concept of all printed cost-less RFID tag, the practical degree of the integration of those devices on the plastic foils should be successfully printed to demonstrate multi bit RFID tag. The tag contains key device units such as 13.56 MHz modulating TFT, digital logic gates and 13.56 MHz rectifier to generate and transfer multi bit digital codes via a wireless communication (13.56 MHz). However, those key devices have never been integrated on the plastic foils using printing method yet because the electrical fluctuation of fully printed TFTs and diodes on plastic foils could not be controlled to show the function of desired devices. In this work, fully gravure printing process in printing 13.56 MHz operated 32 bit RFID tags on plastic foils has been demonstrated for the first time to prove all printed RFID tags on plastic foils can wirelessly generate and transfer 32 bit digital codes using the radio frequency of 13.56 MHz. This result proved that the electrical fluctuations of printed TFTs and diodes on plastic foils should be controlled in the range of maximum 20% to properly operate 32 bit RFID tags.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.473-473
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• 2011

In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.263-267
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• 2006

As technology advances, there is a demand for development of hard solid lubricant coating. (Ti, Cr, Zr)N-$MoS_2$ films were deposited on AISI H13 tool steel substrate by co-deposition of $MoS_2$ with (Ti, Cr, Zr)N using a D.C. magnetron sputtering process. The influence of the $N_2Ar$ gas ratio, the amount of $MoS_2$ in the films and the bias voltage on the mechanical and structural properties of the films were investigated. The highest hardness level was observed at the $N_2/Ar$ gas ratio of 0.3. Hardness of the films did not change much with the increase of the $MoS_2$ content in the films. As the substrate bias potential was increased, hardness level of the film reached maximum at -150 V. Surface morphology of these films indicated that high hardness was attributed to the fine dome structure.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.19-24
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• 2001

The lead frame, which is principal material used in semiconductor packaging, is required to be microscopic in leads and pitches to cope with miniaturization, thin film, large scale integrated. In addition, it is indispensable to eliminate residual stress and burrs occurring at manufacturing lead frames This thesis applied electrolytic abrasion in order to remove burrs and residual stress created during the stamp process. Electrolytic abrasion removed the burrs on the surface of lead frame. Removal of residual stress highly depends on the types of electrolyte solution. In case of perchloric system, electrolytic abrasion removed 23% of residual stress. Through removal of burrs and reducing residual stress, the reliability of lead frame was substantially improved.

• Journal of the Korean Society of Safety
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• v.24 no.6
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• pp.50-54
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• 2009

Ionizer is used for improving manufacturing process and reducing inferior goods in the clean room. As a general rule, neutralization of the electrostatic charge is most important to make TFT-LCD, PDP and OLED. Pulse AC-static eliminator with output voltage of about 10.5kV has been used these days as neutralization device. But this device has a problem with lower performance which was caused by particles-adhesion on the electrode when it has been used for a long time. So we studied to solve the problem with lower performance using high Frequency(72kHz) static eliminator which was produced by Piezo transformer device, and compared Pulse-AC type with Piezo-electronic device such as decay time and ion balance for 10 weeks periods. As a result of this study, we found that Piezo transformer device has been maintained normal condition for 10 weeks. Also, we made the rule by this study, normally Piezo transformer device has to clean the electrode during every 11th weeks.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• Korean Chemical Engineering Research
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• v.46 no.5
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• pp.852-857
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• 2008

The immobilization technique is important to extend the application field of a photocatalyst. Titanium surface was changed into a $TiO_2$ thin film by the anodizing process. The anodized $TiO_2$ had photocatalytic activity, and showed sponge like shape. The photocatalytic degradation of gas phase acetaldehyde and VOCs by anodized titania has been studied in various initial concentrations, humidity and discharge potentials. The reactivity of anodized titania was increased with relative humidity, but excessive humidity led to a decrease of the reaction rate. The electric dark discharge that was combined with photocatalytic reaction enhanced the decomposition rate of the organic compounds. But excessively applied voltage caused corona discharge, which decreased the reaction rate. Optimum relative humidity was 40% and discharge potential was 5 kV under dark discharge region in photocatalytic reaction.

• Journal of Information Display
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• v.2 no.4
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• pp.1-7
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• 2001

This paper investigates the characteristics of a newly developed high density hollow cathode plasma(HCP) system and its application for the etching of silicon wafers. We used $SF_6$ and $O_2$ gases in the HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}cm^{-3}$ at a discharge current of 20 rna, Silicon etch rate of 1.3 ${\mu}m$/min was achieved with $SF_6/O_2$ plasma conditions of total gas pressure of 50 mTorr, gas flow rate of 40 seem, and RF power of200W. This paper presents surface etching characteristics on a crystalline silicon wafer and large area cast type multicrystlline silicon wafer. We obtained field emitter tips size of less than 0.1 ${\mu}m$ without any photomask step as well as with a conventional photolithography. Our experimental results can be applied to various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this research, we studied silicon etching properties by using the hollow cathode plasma system.

• Journal of the Korean Solar Energy Society
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• v.30 no.6
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• pp.102-107
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• 2010

a-Si solar cell has relatively dominant drift current when compared with crystalline solar cell due to the high internal electric field. Such drift current make an impact on the PV module in the local shading. In this paper, the a-Si PV module output characteristics of shading effects was approached in terms of process condition, because of the different deposition layer of thin film lead to rising the resistance. We suggested design condition to ensure the long-term durability of the module with regard to the degradation factors such as hot spot by analyzing the module specification. The result shows a remarkable difference on module uniformity for each shading position. In addition, the unbalanced power loss due to power mismatch of each module could intensify the degradation.