• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.956-960
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• 2009

The characteristics of organic films can be affected by the temperature of evaporation source because the temperature of evaporation source has an effect on substrate temperature during OLED fabrication process using the thermal evaporation. To investigate the characteristics of OLED devices fabricated by using thermally damaged organic films, I-V-L and half life-time in OLED devices fabricated with various substrate temperatures were measured. During emission layer(EML) evaporation, OLED devices with a structure of ITO(100 nm)/ELM200(50 nm)/NPB(30 nm)/$Alq_3$(55 nm)/LiF(0.7 nm)/Al(100 nm) were fabricated at various substrate temperatures(room temperature, $30^{\circ}C$, $40^{\circ}C$, and $50^{\circ}C$). The characteristics of current density and luminance versus applied voltage in OLED devices fabricated shows that many electrical currents flowed and high brightness appeared at low voltage, but that the lifetime of OLED devices dropped suddenly. This phenomenon explained that the crystallization of $Alq_3$ thin film appeared owing to the substrate heating during evaporation.

• 산업공학
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• 제15권4호
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• pp.325-337
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• 2002

In this study we consider the problem of production planning of TFT-LCD(Thin Film Transistor - Liquid Crystal Display) production factory. Due to the complexities of the TFT-LCD production processes, it is difficult to schedule the production planning, and the study about automated scheduler is insufficient. In addition, the existing production method is a Push-System to raise the operation rate with expensive equipment, that has the problem to satisfy the due-date. This study presents an algorithm having a concept of Pull-System that satisfies the due-date and considers specialties of TFT-LCD production process. We make MPS(Master Production Schedule) according to the sales order, and present algorithms for scheduling about In/Out plan considering factory capacity, line balancing, material requirement, and inventory level of all Array, Cell, and Module processes. These algorithms are integrated as an automated production system, and we implement them in the actual TFT-LCD factory circumstance.

• 한국전기전자재료학회논문지
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• 제25권8호
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• pp.620-625
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• 2012

The sol-gel method has been widely used to synthesize the $TiO_2$ for dye sensitized solar cells and has advantages of easily fabrication process, controlling the $TiO_2$ phase and getting transparent thin-film composed of the $TiO_2$. In this paper, we synthesized the crystalline $TiO_2$ by sol-gel method controlled by the quantity ratio of Nitric acid and Ammonium hydroxide additives. The best efficiency result was obtained by 0.05 M Ammonium hydroxide and that results of Voc, Jsc, FF, and efficiency were 0.68 V, 3.28 mA/$cm_2$, 58.14 and 5.21%, respectively.

• 한국전기전자재료학회논문지
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• 제23권10호
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• pp.763-766
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• 2010

By improving the conducting process of metal source/drain (S/D) in direct contact with the channel, schottky barrier metal-oxide-semiconductor field effect transistors (SB MOSFETs) reveal low extrinsic parasitic resistances, offer easy processing and allow for well-defined device geometries down to the smallest dimensions. In this work, we investigated the arrhenius plots of the SB MOSFETs with different S/D schottky barrier (SB) heights between simulated and experimental current-voltage characteristics. We fabricated SB MOSFETs using difference S/D metals such as Cr (${\Phi}_{Cr}$ ~4.5 eV) and Ni (${\Phi}_{Ni}$~5.2 eV), respectively. Schottky barrier height (${\Phi}_B$) of the fabricated devices were measured to be 0.25~0.31 eV (Cr-S/D device) and 0.16~0.18 eV (Ni-S/D device), respectively in the temperature range of 300 K and 475 K. The experimental results have been compared with 2-dimensional simulations, which allowed bandgap diagram analysis.

• 한국전기전자재료학회논문지
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• 제25권5호
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• pp.377-380
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• 2012

Laser direct patterning of indium tin oxide(ITO) is one of new methods of direct etching process to replace the conventional photolithography. A diode pumped Q-switched Nd:$YVO_4$ (${\lambda}$= 1,064 nm) laser was used to produce ITO electrode on various transparent oxide semiconductor films such as zinc oxide(ZnO). The laser direct etched ITO patterns on ZnO were compared with those on glass substrate and were considered in terms of the overlapping rate of laser beam. In case of the laser etching on double-layer, it was possible to obtain the higher overlapping rate of laser beam.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.2113_2114
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• 2009

Chalcopyrite based sollar cells have received much attention because of their tunable electronic and optical properties. As a typical ternary chalcopyrite material, $CuInS_2$ has been considered as one of the most popular and promising candidates as absorber materials for photovoltaic applications because of its high absorption coefficient and environmental consideration. In this study, $CuInS_2$ powders have been synthesized using polyol process of a mixture of copper nitrate, indium nitrate, and thiourea with various stoichiometric molar ratios in ethylene glycol at $196^{\circ}C$. As boiling time goes by, the color of metal ion mixed solutions were changed transparent green to dark green and finally turned to black by reduction of OH- radicals. The prepared powders were fully characterized using SEM, XRD. The particle shape of black colored powders showed sphere with about 50 nm in particle size compared to those with dark green colored powders showed irregular shape with about $1{\mu}m$ in particle size. The XRD results showed highly crystallized $CuInS_2$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1319_1321
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• 2009

본 논문은 마이크로웨이브 플라즈마 프로세스에 의하여 사이클로헥산을 이용한 다이아몬드 박막 제작에 관한 산소유량 변화 및 파라메타 변화에 따른 분광분석 결과에 대하여 논하였다. 인가전력을 증가시킴에 따라서 수소원자의 $H_{\alpha}$ 및 $H_{\beta}$의 발광강도는 증가되는 반면에 CH(B-X) 발광강도는 일정하였으며, 헥산 유량을 증가시킴에 따라 CH(B-X) 라디칼의 발광강도가 증가되고, 산소유량을 증가시킴에 따라 CH(B-X) 라디칼이 산소원자와의 결합에 의해 밀도가 감소하여 발광강도가 감소되었다. 그리고, 산소가 공급되지 않은 경우에는 비정질 또는 DLC 성분이 많이 함유된 결정성이 거의 없는 다이아몬드 박막이 성장되었으며, 산소유량을 증가시킴에 따라서 결정 표면에 잔존하는 미결합 탄소성분들이 제거되면서 결정성이 향상됨을 알 수 있었다. 본 연구를 통하여 유기용매인 사이클로헥산을 이용하여 다이아몬드 박막이 성장됨을 확인할 수 있었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2011년도 춘계학술대회 초록집
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• pp.106.2-106.2
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• 2011

다층 박막 구조로 이루어진 CdS/CdTe 태양전지의 경우, 각각의 박막이 다양한 제조 공정을 거치면서 물성특성의 변화를 겪게 된다. 각각의 박막이 고온의 열처리 공정과, $CdCl_2$ 용액 처리 및 후면 산화막 제거 공정 등을 거치게 되면서 겪게 되는 물성 변화 분석을 살펴보고자 한다. 각각의 박막 제조 방식은 일반적으로 사용되는 방식으로, CdS의 경우는 용액성장법(Chemical Bath Deposition, CBD), CdTe의 경우는 근접승화법(Closed Space Sublimaition, CSS)을 사용했으며, X-Ray Diffractometer (XRD), Raman spectroscopy, Field Emission Scanning Electron Microscope (FE-SEM), Energy Dispersive Spectroscopy (EDS), X-ray Photoelectron Spectroscopy (XPS) 등을 이용하여 분석하였다. 각각의 셀 제조 공정을 거치면서 CdS, CdTe 박막들은 결정, 광 특성, 성분 변화를 보였다.

• 센서학회지
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• 제23권5호
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• pp.295-298
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• 2014

A novel approach to fabricating high-performance glucose sensors is reported, which is based on the process of self-assembled monolayers (SAMs). In this study, we have particularly used ${\alpha}$-lipoic acid (LA) SAMs for the glucose sensors. To our best knowledge, this study is the first one to use LA as SAMs for this purpose. N-hydroxysuccinimide (NHS) and 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide (EDC) were deliberately attached at the same time on the LA SAM. Then, glucose oxidase ($GO_X$) and horseradish peroxidase (HRP) were sequentially immobilized. Thus, the HRP/$GO_X$/NHS-EDC/LA-SAM/Au/Cr/glass working electrode was developed. The glucose-sensing capability of the fabricated sensor was systematically measured by the use of cyclic voltammetry in the range of 1-30 mM glucose in phosphate-buffered saline. The result showed a good sensitivity, that is, as high as $27.5{\mu}A/(mM{\cdot}cm^2)$. This result conspicuously demonstrates that LA can be one of promising substances for use as SAMs for accurately monitoring trace levels of glucose concentration in human blood.

• 한국분말재료학회지
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• 제23권1호
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• pp.1-7
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• 2016

Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are $700^{\circ}C$ and $80^{\circ}C/min$, respectively. The heating directly progresses up to $700^{\circ}C$ with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of $700^{\circ}C$ without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to $700^{\circ}C$.