• 전기학회논문지
• /
• 제58권6호
• /
• pp.1146-1150
• /
• 2009

Cadmium telluride (CdTe) is one of the most attractive photovoltaic materials due to its low cost, high efficiency and stable performance in physical, optical and electronic properties. Few researches on the influences of uniform surface on the photovoltaic characteristics in large-area CdTe solar cell were not reported. As the preceding study of the effects of thickness-uniformity on the photovoltaic characteristics for the large-area CdTe thin film solar cell, chemical mechanical polishing (CMP) process was investigated for an enhancement of thickness-uniformity. Removal rate of CdTe thin film was 3160 nm/min of the maximum value at the 200 $gf/cm^2$ of down force (pressure) and 60 rpm of table speed (velocity). The removal rate of CdTe thin film was more affected by the down force than the table speed which is the two main factors directly influencing on the removal rate in CMP process. RMS roughness and peak-to-valley roughness of CdTe thin film after CMP process were improved to 96.68% and 85.55%, respectively. The optimum process condition was estimated by 100 $gf/cm^2$ of down force and 60 rpm of table speed with the consideration of good removal uniformity about 5.0% as well as excellent surface roughness for the large-area CdTe solar cell.

• ETRI Journal
• /
• 제25권4호
• /
• pp.270-273
• /
• 2003

This paper presents a simple process to integrate thin-film inductors with a bottom NiFe magnetic core. NiFe thin films with a thickness of 2 to 3${\mu}m$ were deposited by sputtering. A polyimide buffer layer and shadow mask were used to relax the stress of the NiFe films. The fabricated double spiral thin-film inductor showed an inductance of 0.49${\mu}H$ and a Q factor of 4.8 at 8 MHz. The DC-DC converter with the monolithically integrated thin-film inductor showed comparable performances to those with sandwiched magnetic layers. We simplified the integration process by eliminating the planarization process for the top magnetic core. The efficiency of the DC-DC converter with the monolithic thin-film inductor was 72% when the input voltage and output voltage were 3.5 V and 6 V, respectively, at an operating frequency of 8 MHz.

• 센서학회지
• /
• 제27권3호
• /
• pp.182-185
• /
• 2018

Zinc oxide (ZnO) thin films have the advantages of growing at a low temperature and obtaining high charge mobility (carrier mobility) [1]. Furthermore, the zinc oxide thin film can be used to control application resistance depending on its oxygen content. ZnO has the desired physical properties, a transparent nature, with a flexible display that makes it ideal for use as a thin-film transistor. Though these transparent flexible thin-film transistors can be manufactured in various manners, manufacturing large-area transistors using a solution process is easier owing to the low cost and flexible substrate. The advantage of being able to process at low temperatures has been attracting attention as a preferred method. However, in the case of a thin-film transistor fabricated through a solution process, it is reported that charge mobility is lower. To improve upon this, a method of improving the crystallinity through heat treatment and increasing electron mobility has been reported. However, as the heat treatment temperature is relatively high at $500^{\circ}C$, an application where a flexible substrate is absent would be more suitable.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.313-313
• /
• 2013

For high-performance TFT (Thin film transistor), poly-crystalline semiconductor thin film with low resistivity and high hall carrier mobility is necessary. But, conventional SPC (Solid phase crystallization) process has disadvantages in fabrication such as long annealing time in high temperature or using very expensive Excimer laser. On the contrary, MIC (Metal-induced crystallization) process enables semiconductor thin film crystallization at lower temperature in short annealing time. But, it has been known that the poly-crystalline semiconductor thin film fabricated by MIC methods, has low hall mobility due to the residual metals after crystallization process. In this study, Ni metal was shallow implanted using PIII&D (Plasma Immersion Ion Implantation & Deposition) technique instead of depositing Ni layer to reduce the Ni contamination after annealing. In addition, the effect of external magnetic field during annealing was studied to enhance the amorphous silicon thin film crystallization process. Various thin film analytical techniques such as XRD (X-Ray Diffraction), Raman spectroscopy, and XPS (X-ray Photoelectron Spectroscopy), Hall mobility measurement system were used to investigate the structure and composition of silicon thin film samples.

• Journal of the Korean Wood Science and Technology
• /
• 제23권4호
• /
• pp.74-84
• /
• 1995

Eight types of thin composite panels were manufactured by press-lam and mat-forming process applied to optimum manufacturing condition, studied in former first research by author (1995). They were tested and compared with control boards on dimensional stability, internal bond strength, tensile strength, Screw withdrawal strength, and bending properties. These thin composite panels manufactured by mat-forming process were generally superior to those by press-lam in dimensional stability and mechanical properties. In the dimensional stability and mechanical properties of thin composite panels manufactured by mat-forming process, the thin composite panels (A and E type) composed of particle or sawdust core and veneer face with polyethylene film, were as good as those of common plywood (control board). Internal bond strength showed highest value in the thin composite panel(D type) which composed of particle core and polypropylene screen face with polyethylene film. The thin composite panels(G and H type) composed of sawdust or particle core and polypropylene screen face with polyethylene film by press-lam and mat-forming process, showed most highest value in dimensional stability and water absorption.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.100-101
• /
• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.

• 한국정밀공학회:학술대회논문집
• /
• 한국정밀공학회 1997년도 춘계학술대회 논문집
• /
• pp.1053-1057
• /
• 1997

Laser thin film process with a Q-switch pulsed YAG laser was performed for micro machining. In this research, we performed basic Cr thin film on glass substrates removal machining experiments. Form experiments, it happens not only evaporration of thin film but also spatter and cohesion of melting substance in working region, when machining a Cr thin film by Q-switch YAG laser beam irradiation. Critical energy of surface irradiation type by irradiation direction of laser in a face composing thin film on the glass is higher than that of back irradiation type, but the latter is favorable because of spatter appearance. In case of image formation position when laser beam is irradiated, the defocus is permitted to a certain extent within forcus depth. Ifexceeds focus depth, formation of pattern is vanishing step by step.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.253-253
• /
• 2012

Low temperature SiOx film process has being required for both silicon and oxide (IGZO) based low temperature thin film transistor (TFT) for application of flexible display. In recent decades, from low density and high pressure such as capacitively coupled plasma (CCP) type plasma enhanced chemical vapor deposition (PECVD) to the high density plasma and low pressure such as inductively coupled plasma (ICP) and electron cyclotron resonance (ECR) have been used to researching to obtain high quality silicon oxide (SiOx) thin film at low temperature. However, these plasma deposition devices have limitation of controllability of process condition because process parameters of plasma deposition such as RF power, working pressure and gas ratio influence each other on plasma conditions which non-leanly influence depositing thin film. In compared to these plasma deposition devices, neutral beam assisted chemical vapor deposition (NBaCVD) has advantage of independence of control parameters. The energy of neutral beam (NB) can be controlled independently of other process conditions. In this manner, we obtained NB dependent high crystallized intrinsic and doped silicon thin film at low temperature in our another papers. We examine the properties of the low temperature processed silicon oxide thin films which are fabricated by the NBaCVD. NBaCVD deposition system consists of the internal inductively coupled plasma (ICP) antenna and the reflector. Internal ICP antenna generates high density plasma and reflector generates NB by auger recombination of ions at the surface of metal reflector. During deposition of silicon oxide thin film by using the NBaCVD process with a tungsten reflector, the energetic Neutral Beam (NB) that controlled by the reflector bias believed to help surface reaction. Electrical and structural properties of the silicon oxide are changed by the reflector bias, effectively. We measured the breakdown field and structure property of the Si oxide thin film by analysis of I-V, C-V and FTIR measurement.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
• /
• pp.144.2-144.2
• /
• 2013

With the synthesis of graphene sheets as large-scale and high quality, it is essentially important to develop suitable graphene patterning process for future industrial applications. Especially, transfer or patterning method of CVD-grown graphene has been studied. We report simple soft lithographic process to develop easily applicable patterning method of large-scale graphene sheets by using chemically functionalized polymer stamp. Also important applications, the prototype capacitors with graphene electrode and commercial polymer dielectrics for the electrostatic-type touch panel are fabricated using the developed soft lithographic patterning and transfer process.

• 반도체디스플레이기술학회지
• /
• 제17권2호
• /
• pp.57-60
• /
• 2018

Recently, Thin-film transistors (TFTs) are fundamental building blocks for state-of-the-art microelectronics, such as flat-panel displays and system-on-glass. Zinc oxide thin films have the advantage that they can grow at low temperature and can obtain high charge movility. Also the zinc oxide thin film can be used to control the resistance according to the oxygen content, so it is very easy to obtain the desired physical properties. In this paper, we fabricated a zinc oxide thin film on a polished copper substrate through a solution process, then improved the crystallinity through a geat treatment porcess, and studied to transfer it on a flexible substrate after the heat treatment was completed.