• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2702-2707
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• 2007

The purpose of this study is to calculate the behavior of molecules for the generation of homogeneous thin-films in the process of spray deposition. The calculation system was composed of a suface molecular region and droplet molecular region. The thin-film was generated when droplet molecules fell to surface molecules. Lennard-Jones potential had been used as intermolecular potential, and only attraction 때 d repulsion had been used for the behavior of the droplet on the solid surface. As results, the behavior of the droplet was so much influenced by the surface temperature in the spray deposition process. High temperature of surface has higher porosity and larger spread area. It was found that simulation results generally agreed well with previous the experimental results. This simulation result will be the foundation for the deposition processes of industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05d
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• pp.25-28
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• 2003

Ozone is a strong and useful oxidizing gas for the fabrication of oxide thin films. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper an ozone condensation system was evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Ozone was condensed by an adsorption method and the ozone concentration reached 8.5 mol% in 2.5 h after the beginning of the ozone condensation process, indicating high effectiveness of the condensation process. Ozone was continuously desorbed from the silica gel by the negative pressure. We found the decomposition in the ozone concentration negligible if the condensed ozone is transferred from the ozone condensation system to the film growth chamber within a few minutes.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1192-1195
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• 2003

A highly condensed ozone gas be transferred to the superconductor thin film growth chamber because ozone is strong oxidizing gas. In order to obtain high quality oxide thin films, higher ozone concentration is necessary. In this paper an ozone condensation system was evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Ozone was condensed by an adsorption method and the ozone concentration reached 8.5 mol% in 2.5 h after the beginning of the ozone condensation process, indicating high effectiveness of the condensation process. Ozone was continuously desorbed from the silica gel by the negative pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.94-97
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• 2005

Bismuth high Tc superconducting thin films are fabricated via a co-deposition process by an ion beam sputtering with an ultra low growth rate, and sticking processing of the respective elements are evaluated. The sticking processing of bismuth element in bismuth high Tc superconducting thin film formation was observed to show a unique temperature dependence; it was almost a constant value of 0.49 below about $730^{\circ}C$ and decreased linearly over about $730^{\circ}C$. This temperature dependence can be elucidated from the evaporation and sublimation rates of bismuth oxide, $Bi_2O_3$, from the film surface. It is considered that the liquid phase of the bismuth oxide plays an important role in the bismuth phase formation in the co-deposition process.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.375-378
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• 1998

Platinum thin film which hardly form volatile compounds with any reactive gas at normal process temperature was etched in inductive coupled BCl$_{3}$/Cl$_{2}$ plasma. The etch rate of platinum thin film increased with increasing Cl$_{2}$/(Cl$_{2}$ + BCl$_{3}$) ratio. That reasoned increasing of ion current density.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1455-1458
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• 2008

Amorphous silicon (a-Si:H) thin-film transistors (TFTs) are fabricated on flexible organic polymer foil substrates. As-fabricated performance, electrical bias-stability at elevated temperatures, electrical response under mechanical flexing, and prolonged mechanical stability of the TFTs are studied. TFTs made on plastic at ultra low process temperatures of $150^{\circ}C$ show initial electrical performance like TFTs made on glass but large gate-bias stress instability. An abnormal saturation of the instability against operation temperature is observed.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.377-377
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• 2009

Currently, new and renewable energy come into the spotlight, such as solar energy, wind power, fuel cell, hybrid car etc., due to the energy resources is being depleted. In order to solve like this problem, we addressed the roll to roll printing machine for the thin film solar cell by using printing technology. For the this research, we archived concept design and verified propriety.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.95-96
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• 2006

ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1600-1604
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• 2004

As the integrated circuit device shrinks to the smaller dimension, the chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD) layer with free-defect. The effect of alternative commerical slurries pads, and post-CMP cleaning alternatives are discuess, with removal rate, scratch dentisty, surface roughness, dishing, erosion and particulate density used as performance metrics. we investigated the performance of $SnO_2$-CMP process using commonly used silica slurry, ceria slurry, tungsten slurry. This study shows removal rate and nonuniformity of $SnO_2$ thin film used to gas sensor by using Ceria, Silica, W-Slurry after CMP process. This study also shows the relation between partical size and CMP with partical size analysis of used slurry.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.06a
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• pp.79-85
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• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.