• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.71-71
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• 2009

This paper describes a simple, on-chip CMOS compatible the thin-film inductor applied for the dc-dc converters. A fully CMOS-compatible thin-film inductor with a bottom NiFe core is integrated with the DC-DC converter circuit on the same chip. By eliminating ineffective top magnetic layer, very simple process integration was achieved. Fabricated monolithic thin film inductor showed fairly high inductance of 2.2 ${\mu}H$ and Q factor of 11.2 at 5MHz. When the DC-DC converter operated at $V_{in}=3.3V$ and 5MHz frequency, it showed output voltage $V_{out}=8.0V$, and corresponding power efficiency was 85%.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.816-818
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• 1998

In this paper Polyimide(PI) thin film are fabricated by vapor deposition polymerization(VDP) of dry process which are easy to control the film's thickness and hard to pollute due to volatile solvent. The FT-IR spectrum show that PAA thin films fabricated by VDP are changed to PI thin film by thermal curing. From AFM(Atomic Force Microscopy) experimental as the higher curing temperature. the thin film thickness decreases and roughness decresse.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.985-988
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• 2008

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.567-570
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• 2010

With continuously increasing flat panel display size, uniformity of thin film deposition has been drawing more attentions and associated fabrication methodologies are being actively investigated. Since the convective flow field of mixture gas plays a significant role for deposition characteristics of thin film in an APCVD system, it is greatly important to maintain uniform distribution and consistent concentration of mixture gas species. In this paper, computational study has been performed for the improvement of flow uniformity of mixture gas in an APCVD reactor during thin film deposition process. A diffuser slit has bee designed to spread the locally concentrated gas flow exiting from the flow distributor. A uniform flow distributor has been developed which has less dependency on operating conditions for global flow uniformity

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.256-259
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• 2008

An micro-probe tip must be manufactured using thin film to evaluate integrity of the semiconductor with narrow distance between pads. In this study, fatigue tests were performed for BeCu thin film which is used in micro-probe tip of semiconductor test machine. The thin film was manufactured by electro plating process, and the specimens were fabricated by wire-cut electric discharge method to make hour glass type specimen of $5000{\mu}m$ width, $29200{\mu}m$ length and $30{\mu}m$ thickness. The fatigue test of load control with 10Hz frequency was performed, in ambient environment. The fatigue cycles were tension-tension with mean stress, at stress ratio, R=0.1.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.135.2-135.2
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• 2014

Photon conversion technology for thin film solar cells is reviewed. The high-energy photons which are hardly absorbed in solar cells can be transformed the low energy photon by the photon conversion process such as down conversion or down shift, which can improve the solar cell efficiency over the material limit. CdSe-based quantum dot materials commonly used in LED can be used as the photon conversion layer for Si thin film solar cells. The photon conversion structure of CdSe-based quantum dot for Si thin film solar cells will be presented and the pros and cons for the Si thin film solar cells integrated with the photon conversion layers will be discussed.

• 한국연소학회:학술대회논문집
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• 2003.12a
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• pp.237-242
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• 2003

The measurement study of instantaneous temperature at combustion chamber wall and the temperature of combustion gas has been under lots of research and development to conclude the temperature process in internal combustion engine for combustion characteristics analysis. The measurement with fast responsibility should be used for temperature measurement inside combustion chamber wall since temperature of wall changes, due to the various gas temperature, irregularly during the combustion. Therefore, thin film instantaneous surface temperature probe, which characterizes the fastest and the most accurate responsibility among contact typed temperature measurement, was used for the experiments. This new thin film instantaneous surface temperature probe improved the problems of noise and durability. The optimal coating thickness of thin film instantaneous surface temperature probe was proven to be $10{\mu}m$ for the best responsibility and durability. It also allowed the stable temperature measurement be taken up to $1,200^{\circ}C$ and proven to be read possibly from the combustion chamber wall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.228-231
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• 1999

The preparation and electrical properties of LIPON electrolyte were investigated in order to fabricate all solid state thin film battery. The LIPON thin film was deposited by r.f. sputtering of Li$_3$PO$_4$ target in O$_2$-N$_2$ mixtures. The LIPON deposited at N$_2$+10% O$_2$ ratio had a conductivity at 25 $^{\circ}C$ of 1.8${\times}$10$\^$-6/S/cm. The ion conductivity of the LIPON films decreased as the O$_2$ content of the process gas increased.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.439-443
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• 1987

$PbTiO_3$ thin film is prepared by rf sputtering method to implement the pyroelectric infrared detector at room temperature. Annealing of $PbTiO_3$ thin film is done from $400^{\circ}C$ to $550^{\circ}C$ each for 2 hours in furnace. The spectral response to recrystallization process of $PbTiO_3$ thin film is measured by IR photospectro meter. Pyroelectric detector Modeling is studied for implementing device using electrical equivalent circuit model. It is found that $PbTiO_3$ thin film has two IR absorption band within $1000-400\;cm^{-1}$ (10um-25um) and it's spectral response is improved as annealing temperature increase. As a result of pyroelectric detector modeling, we find the possibility of implementing optimum device structure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.504-505
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• 2005

In this report, we demonstrate a high performance polymer thin-film transistor fabricated on a paper substrate. As a water barrier layer, parylene was coated on the paper substrate by using vacuum deposition process. Using poly (3-hexylthiophene) as an active layer, a polymer thin-film transistor with field-effect of up to 0.086 $cm^2/V{\cdot}s$ and on/off ratio of $10^4$ was achieved. The fabrication of polymer thin-film transistor built on a cheap paper substrate is expected to open a channel for future applications in flexible and disposable electronics with extremely low-cost.