• Journal of Sensor Science and Technology
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• v.21 no.6
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• pp.395-401
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• 2012

The bond strength of three types of $TiO_2$ coatings onto fluorine-doped $SnO_2$ (FTO) glass was investigated with the aid of a tape test according to ASTM D 3359-95. Transmittance was then measured using an UV-vis spectrophotometer in the wavelength range of 300 nm to 800 nm to evaluate the extent of adhesion of $TiO_2$ nanorods/nanoparticles on FTO glass. A sharp interface between the coating layer and the substrate was observed for single $TiO_2$ coating ($TiO_2$ nanorods/FTO glass), which may be detrimental to the bonding strength. In multicoating sample ($TiO_2$ nanorod/$TiO_2$ nanoparticle/$TiO_2$ nanoparticle/FTO glass), the tape test was not performed due to severe peeling-off prior to the test. On the other hand, the dual coating sample ($TiO_2$ nanorod/$TiO_2$ nanoparticle/FTO glass) showed minimum variation of transmittance (4%) after the test, suggesting that the topcoat adheres well with the FTO substrate due to the presence of the $TiO_2$ nanoparticle buffer layer. The use of a $TiO_2$ nanorod electrode layer with good adhesion may be attributed to the excellent dye sensitized solar cell performance.

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.266-269
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• 2020

In this study, we investigated the effect of a sulfur passivation (S-passivation) process step on the electrical properties of surface-channel In_0.7Ga_0.3As quantum-well (QW) metal-oxide-semiconductor field-effect transistors (MOSFETs) with S/D regrowth contacts. We fabricated long-channel In_0.7Ga_0.3As QW MOSFETs with and without (NH₄)₂S treatment and then deposited 1/4 nm of Al₂O₃/HfO₂ through atomic layer deposition. The devices with S-passivation exhibited lower values of subthreshold swing (74 mV/decade) and drain-induced barrier lowering (19 mV/V) than the devices without S-passivation. A conductance method was applied, and a low value of interface trap density D_it (2.83×10¹² cm^-2eV^-1) was obtained for the devices with S-passivation. Based on these results, interface traps between InGaAs and high-κ are other defect sources that need to be considered in future studies to improve III-V microsensor sensing platforms.

• Journal of Sensor Science and Technology
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• v.11 no.3
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• pp.145-154
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• 2002

NiCr-heaters with three different thicknesses ranging from 400 nm to 800 nm were fabricated and their characteristics were compared for the purpose of developing a chromel-alumel multijunction thermal converter for low input voltage with low frequency. The thermoelectric effect-induced AC-DC voltage transfer difference of the thermal converter with a built-in NiCr-heater of 400 nm-thickness was ${\pm}0.51{\sim}1.69\;ppm$ in the DC reversing frequency of $40\;Hz{\sim}10\;kHz$ with appling $0.5\;V_{rms}$ and the difference was increased to ${\pm}40{\sim}{\pm}115\;ppm$ in the frequency of $40\;Hz{\sim}1\;MHz$, when both thermoelectric effects and frequency effects were considered, showing the thermal converter would be suitable for the low input voltage application with low frequency.

• Journal of Sensor Science and Technology
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• v.14 no.3
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• pp.160-168
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• 2005

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_{2}O_{3}$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193 nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_{2}O_{3}$) substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence. The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}1016cm^{-3}$ and $299cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=3.3973 eV-($2.69{\times}10^{-4}$ eV/K)$T^{2}$/(T+463K). The crystal field and the spin-orbit splitting energies for the valence band of the ZnO have been estimated to be 0.0041 eV and 0.0399 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{6}$ states of the valence band of the ZnO. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n = 1.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.333-337
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• 2013

This study proposes a simply fabricated micro stator for higher output power than previously reported micro stators. The stator has been fabricated by inserting enamel coil in silicon mold formed by micro etching process. The most merits of the proposed micro stator are the simple fabrication process and high output power. Previously reported micro stators have high resistance because the micro coil is fabricated by relatively thin-film-based deposition process such as sputtering and electroplating. In addition, the previously reported micro coil has many electrical contact points for forming the coil structure. These characteristics of the micro stator can lead to low performance in output power. However, the proposed micro stator adopts commercially available enamel coil without any contact point. Therefore, the enamel coil of the proposed micro stator has low junction resistance due to the good electrical quality compared with the deposited or electroplated metal coil. Power generation tests were performed and the fabricated stator can produce 5.4 mW in 4000 RPM, $1{\Omega}$ and 0.3 mm gap. The proposed micro stator can produce larger output power than the previously reported stator spite of low RPM and the larger gap between the permanent magnet and the stator.

• Journal of Sensor Science and Technology
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• v.8 no.5
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• pp.421-426
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• 1999

In this paper, we present p-channel GaAs MOSFET having $Al_2O_3$ as gate insulator fabricated on a semi-insulating GaAs substrate, which can be operated in the depletion mode. $1\;{\mu}m$ thick undoped GaAs buffer layer, $4000\;{\AA}$ thick p-type GaAs epi-layer, undoped $500{\AA}$ thick AlAs layer, and $50\;{\AA}$ thick GaAs cap layer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate and this wafer was oxidized. AlAs layer was fully oxidized as a $Al_2O_3$ thin film. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S I GaAs was successful in realizing depletion mode p-channel GaAs MOSFET.

• Journal of Sensor Science and Technology
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• v.5 no.5
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• pp.69-77
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• 1996

In this paper, we fabricated the micro hotplate which consisted of a thin film heater(Pt/Cr bilayers) sandwiched with the thermal oxide and E-beam evaporated oxide. And we studied the electrical and the structural properties of Pt/Cr bilayers due to annealing temperature. When we compared the temperature measured from type k thermocouples with the temperature acquired from I.R. thermo-vision system according to the variations of emissivity, the emissivity of I-beam evaporated oxide was 0.5. The sheet resistance of Pt/Cr bilayers didn't depend on the Cr layer thickness, and it was considered as the existence of CrO between the Pt and the Cr layer. When the annealing temperature was increased from $500^{\circ}C$ to $700^{\circ}C$, the out-diffusions of Cr were increased(which was confirmed by AES depth profile) and the grain size of Pt(220) phase was enlarged also(analyzed by XRD and SEM photographs). From the results of XRD analysis and AES depth profile, the Pt/Cr bilayers annealed at $500^{\circ}C$ were more stable than any other cases in structural properties.

• Applied Chemistry for Engineering
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• v.32 no.3
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• pp.229-236
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• 2021

During the last two decades, metal-organic frameworks (MOFs) have been drawn attention due to their high specific surface area, porosity, and catalytic activities that allow to use in many applications such as sensor, catalysis, energy storage, etc. To synthesize MOFs hydrothermal or solvothermal method were generally used. However, these methods require high-cost equipment and long time-spend for the synthesis with multi-step process. In contrast, electrochemical synthesis has been considered as a simple and easy process under the ambient conditions. In this review, we described the mechanism of electrochemical MOFs synthesis by the number of configured electrodes system, with the recent reports of various applications.

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.154-162
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• 1998

A planar Bi-Sb multijunction thermal converter with high thermal sensitivity and small ac-dc transfer error has been fabricated by preparing the bifilar thin film Pt-heater and the hot junctions of thin film Bi-Sb thermopile on the $Si_{3}N_{4}/SiO_{2}/Si_{3}N_{4}$-diaphragm, which functions as a thermal isolation layer, and the cold junctions on the dielectric membrane supported with the Si-substrate, which acts as a heat sink, and its ac-dc transfer characteristics were investigated with the fast reversed dc method. The respective thermal sensitivities of the converter with single bifilar heater were about 10.1 mV/mW and 14.8 mV/mW in the air and vacuum, and those of the converter with dual bifilar heater were about 5.1 mV/mW and 7.6 mV/mW, and about 5.3 mV/mW and 7.8 mV/mW in the air and vacuum for the inputs of inside and outside heaters, indicating that the thermal sensitivities in the vacuum, where there is rarely thermal loss caused by gas, are higher than those in the air. The ac-dc voltage and current transfer difference ranges of the converter with single bifilar heater were about ${\pm}1.80\;ppm$ and ${\pm}0.58\;ppm$, and those of the converter with dual bifilar heater were about ${\pm}0.63\;ppm$ and ${\pm}0.25\;ppm$, and about ${\pm}0.53\;ppm$ and ${\pm}0.27\;ppm$, respectively, for the inputs of inside and outside heaters, in the frequency range below 10 kHz and in the air.

• Journal of Sensor Science and Technology
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• v.4 no.1
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• pp.51-63
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• 1995

Polycrystalline $CdS_{1-x}Se_{x}$ thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study $CdS_{1-x}Se_{x}$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, CdSe samples annealed in $N_{2}$ gas at $550^{\circ}C$ it was found hexagonal structure which had the lattice constant $a_{0}=4.1364{\AA}$, $c_{0}=6.7129{\AA}$ in CdS and $a_{0}=4.3021{\AA}$, $c_{0}=7.0142{\AA}$ in CdSe, respectively. Hall effect on these samples was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity(${\gamma}$), maximum allowable power dissipation and response time on these samples.