• 한국전기전자재료학회논문지
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• 제30권5호
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• pp.276-283
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• 2017

A polysilicon-based metal-semiconductor-metal (MSM) photodetector was fabricated by means of our new methods. Its photoresponse characteristics were analyzed to see if it could be applied to a sensor system. The processes on which this study focused were an alloy-annealing process to form metal-polysilicon contacts, a post-annealing process for better light absorption of as-deposited polysilicon, and a passivation process for lowering defect density in polysilicon. When the alloy annealing was achieved at about $400^{\circ}C$, metal-polysilicon Schottky contacts sustained a stable potential barrier, decreasing the dark current. For better surface morphology of polysilicon, rapid thermal annealing (RTA) or furnace annealing at around $900^{\circ}C$ was suitable as a post-annealing process, because it supplied polysilicon layers with a smoother surface and a proper grain size for photon absorption. For the passivation of defects in polysilicon, hydrogen-ion implantation was chosen, because it is easy to implant hydrogen into the polysilicon. MSM photodetectors based on the suggested processes showed a higher sensitivity for photocurrent detection and a stable Schottky contact barrier to lower the dark current and are therefore applicable to sensor systems.

• 센서학회지
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• 제4권3호
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• pp.15-21
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• 1995

본 논문은 졸겔법에 의해 $TiO_{2}-V_{2}O_{5}$ 습도센서를 제조하고, 미세구조 및 결정구조를 분석하여 습도감지특성이 뛰어난 최적 제조조건을 찾았다. 그레인 크기는 $Ti^{4+}$ 사이트에 치환되는 $V^{5+}$비에 비례하여 증가하였다. X-선 회절분석 결과, $V_{2}O_{5}$비에 관계없이 $V^{5+}$피크는 확인할 수 없었다. 실험결과로부터 $V_{2}O_{5}$비가 1mol%, 열처리온도가 $700^{\circ}C$일때 가장 우수한 습도감지특성을 나타내었다. 시편의 정전용량은 주파수가 증가할수록 감소하였다.

• 센서학회지
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• 제27권1호
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• pp.13-20
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• 2018

Gas sensors based on metal oxide semiconductors are used in numerous applications including monitoring indoor air quality and detecting harmful substances like volatile organic compounds. Nanostructures, for example, nanoparticles, nanotubes, nanodomes, and nanofibers have been widely utilized to improve gas sensing properties of metal oxide semiconductors, and this increases the effective surface area, resulting in participation of more target gas molecules in the surface reaction. In the recent times, 1-dimensional (1D) metal oxide nanostructures fabricated using anodic oxidation have attracted great attention due to their high surface-to-volume ratio with large-area uniformity, reproducibility, and capability of synthesis under ambient air and pressure, leading to cost-effectiveness. Here, we provide a brief overview of 1D metal oxide nanostructures fabricated by anodic oxidation and their gas sensing properties. In addition, recent progress on thin film-based anodic oxidation for application in gas sensors is introduced.

• 센서학회지
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• 제16권6호
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• pp.395-400
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• 2007

Ambient drying sol-gel processing was used for monolithic silica ambigels in the temperature range of $130-250^{\circ}C$. A new method of mesopore ambigels, which mean the aerogels prepared by ambient pressure drying process synthesis, is suggested at first. This method includes two important approaches. The first point is that $SiO_{2}$ surface modification of wet gel was performed by trimethylchlorosilane in n-butanol solution. This procedure is provided the silica gel mesopore structure formation. The second point is a creation of the ternary azeotropic mixture water/n-butanol/octane as porous liquid, which is effectively provided removing of water such a low temperature by 2 step drying condition under ambient pressure. The silica aerogels, which were prepared by ambient pressure drying from azeotropic mixture of water/n-butanol/octane, are transparent, crack-free and mesoporous (pore size ${\sim}$ 5.6 nm) with surface area of ${\sim}$ $923{\;}m^2/g$, bulk density of $0.4{\;}g/cm^3$ and porosity of 85 %.

• Advances in materials Research
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• 제2권4호
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• pp.181-193
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• 2013

Description and theory of spin coating technique has been elaborately outlined and a spin coating machine designed and fabricated using affordable components. The system was easily built with interdisciplinary knowledge of mechanics, fluid mechanics and electronics. This equipment employs majorly three basic components and two circuit units in its operation. These include a high speed dc motor, a proximity sensor mounted at a distance of about 15 mm from a reflective metal attached to the spindle of the motor to detect every passage of the reflective metal at its front and generate pulses. The pulses are transmitted to a micro-controller which process them into rotational speed (revolution per minute) and displays it on a lead crystal display (LCD) which is also a component of the micro-controller. The circuit units are a dc power supply unit and a PWM motor speed controlling unit. The various components and circuit units of this equipment are housed in a metal casing made of an 18 gauge black metal sheet designed with a total area of 1, $529.2cm^2$. To illustrate the use of the spin-coating system, ZnO sol-gel films were prepared and characterized using SEM, XRD, UV-vis, FT-IR and RBS and the result agrees well with that obtained from standard equipment and a speed of up to 9000 RPM has been achieved.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2005년도 추계종합학술대회
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• pp.781-784
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• 2005

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress $Si_3N_4$ membranes with $1.2{\mu}m-thickness$ using MEMS technology. Poly-Si thin film with thickness of 3500 ${\AA}$ as the first thermocouple material, was deposited by LPCVD method. And aluminum thin film with thickness of 6000 ${\AA}$ as the second thermocouple material, was deposited by sputtering method. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers (16 ${\sim}$ 48), thermocouple line widths (10 ${\mu}m$ ${\sim}$ 25 ${\mu}m$), thermocouple lengths (100 ${\mu}m$ ${\sim}$ 500 ${\mu}m$), membrane areas ($1^2\;mm^2$ ${\sim}$ $2.5^2\;mm^2$) and junction areas (150 ${\mu}m^2$ ${\sim}$ 750 ${\mu}m^2$), respectively. Electromotive forces of fabricated thermopile were measured 1.1 mV ${\sim}$ 7.4 mV at $400^{\circ}C$. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• 센서학회지
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• 제9권4호
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• pp.288-296
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• 2000

$64{\sim}85\;{\Omega}$의 저출력저항을 갖는 박막 크로멜-알루멜 다중접합 열전변환기의 입력-출력 관계는 근사적으로 제곱법칙을 따랐지만, 전압 감응도는 공기 중 및 진공 중에서 각각 $0.34{\sim}0.67\;V/W$ 및 $1.15{\sim}1.48\;V/W$로서 매우 작았고, 공기 중에서 교류-직류 전압 변환오차는 입력이 1 V의 정현파 실효전압일 때 $40\;Hz{\sim}10\;kHz$의 주파수 범위에서 약 +340 ppm으로서 매우 크게 나타났다. 열전변환기의 큰 변환오차는 주로 저출력저항으로부터 기인된 작은 전압 감응도 및 큰 열손실 때문으로 생각되고, 따라서 작은 교류-직류 변환오차를 얻기 위한 최적화가 필요하다.

• 센서학회지
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• 제7권2호
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• pp.97-102
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• 1998

PPV(poly(p-phenylenevinylene))를 발광체로 이용한 유기 박막 EL 소자를 다양한 구조와 조건으로 제작하였으며, 그 전기-광학적 특성을 평가하였다. 제작된 EL 소자는 단층구조(ITO(indium tin oxide)PPV/Mg), 이층구조 (ITO/PVK(poly(N-vinylcarbazole))/PPV)Mg와 ITO/PPV/Polymer matrix+PBD/Mg) 그리고 삼층구조 (ITO/PVK/PPV/PS(polystyrene)+PBD(butyl-2-(4-biphenyl)-5-(4-tert-butylphenyl-1,3,4-oxadiazole))/Mg)를 가지며, 그들의 전기광학적 특성을 상호 비교하였다. 이층구조(ITO/PPV)Polymer matrix+PBD/Mg)에서는 PMMA (poly(methyl methacrylate)), PC(polycarbonate) PS 와 MCH(side chain liquid crystalline homopolymer)를 고분자 메트릭스로 사용하였으며, 특히, PS 고분자 메트 릭스를 전자수송층으로 사용하는 경우에 전자수송제인 PBD의 농도에 따른 발광휘도 특성을 구하였다. 제작된 소자의 인가전압에 따른 전류, 휘도특성을 분석한 결과 터널링효과를 나타내었고 안정된 발광특성을 가진다는 것을 알 수 있었다.

• 센서학회지
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• 제8권2호
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• pp.184-188
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• 1999

Pulsed laser deposition법에 의하여 양질의 PbTe 박막을 다양한 기판온도에 따라 성장시켰다. XRD패턴으로 부터 각 온도에서의 PbTe층들은 결정화가 되어있음을 알 수 있었다. 또한 PbTe 박막의 XRD 피크들은 (h00)의 방향성을 나타내고 있다. Pb의 재증발로 인하여 $400^{\circ}C$이상에서는 PbTe 박막은 결정성의 박막으로 형성되지 않았다. AFM 이미지로부터 박막의 표면은 작은 granular 결정들과 평탄한 매트릭스로 구성되어 있음이 관찰되었다. 기판온도의 증가에 따라 표면의 입자들이 커지는 것을 알 수 있었다. Hall-effect 측정으로부터 $300^{\circ}C$에서 성장한 PbTe 박막의 전기적 특성은 $3.68{\times}10^{18}cm^{-3}$의 캐리어 농도와 $148\;cm^2/Vs$의 Hall 이동도를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.395-398
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• 2002

Many research group started study to develope x-ray detector using thin film transistor from 1970. But realization of TFT based x-ray detector development was caused by progress of thin film transistor liquid crystal display(TFTLCD) device technology in 1990. The main current of TFT technology is display device. Research results expend TFT technology field from display device to sensor manufacture technology. These days many research group in the world realize various digital x-ray detector. In this study, We compare discharge erasing method to visible light erasing method in a-Se based digital x-ray detector. Visible light erasing method is known reset process in direct conversion x-ray detector. Digital x-ray detector using visible light erasing method is not adaptive for conventional x-ray device, because of its thickness. And it is not avaliable for real-time imaging for digital fluoroscopy, because of its long reset time. In this study we overcome these limitations and show new idea for real-time imaging method.