• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.290-296
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• 2011

Carbon nanotubes (CNTs) have excellent electrical, chemical stability, mechanical and thermal properties. In this paper, networks of Multi-walled carbon nanotube (MWCNT) materials were investigated as a resistive gas sensors for the $H_2$ gas detection. Sensor films were fabricated by the air spray method using the multi-walled CNTs dispersion solution on the glass substrates cured with plasma and nitrocellulose. Sensors were characterized by the resistance measurements in the self-fabricated oven in order to find the optimum detection properties for the hydrogen gas molecular. The sensitivity and the linearity of the MWVNT sensors using the glass substrate cured with plasma for the $H_2$ gas concentration of 0.06~0.6 ppm are 0.013~0.097%/sec and 0.131~0.959%FS, respectively. The MWCNT film was excellent in the response for the hydrogen gas moleculars and its reaction speed was very fast, which could be using as hydrogen gas sensor. The resistance of the fabricated sensors decreases when the sensors are exposed to $H_2$ gas.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.39-44
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• 2013

In the semiconductor heat-treatment process, the temperature uniformity determines the film quality of a wafer. This film quality effects on the overall yield rate. The heat transfer of the wafer surface in the heat-treatment process equipment is occurred by convection and radiation complexly. Because of this, there is the nonlinearity between the wafer temperature and reactor. Therefore, the accurate prediction of temperature on the wafer surface is difficult without the direct measurement. The thermal camera and the T/C wafer are general ways to confirm the temperature uniformity on the heat-treatment process. As above ways have limit to measure the temperature in the precise domain under the micro-scale. In this study, we developed the thin film type temperature sensor using the MEMS technology to establish the system which can measure the temperature under the micro-scale. We combined the experiment and numerical analysis to verify and calibrate the system. Finally, we measured the temperature on the wafer surface on the semiconductor process using the developed system, and confirmed the temperature variation by comparison with the commercial T/C wafer.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.55-59
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• 2012

NOx is one of the toxin gases, which is mainly causing the optic-chemical smog phenomena, and decreasing in the function of nose and taste. Especially, NO is easily reacting with $O_3$, and then becoming the $NO_2$. $NO_2$ is mainly causing the acidulation rain. So, we should develop the NOx gas sensing system to detect NOx gas. In this paper, we present the microstructure and the NOx gas detecting properties of the nitrocellulose/MWCNT thin film coated by the air-spray on the glass substrate. The nitrocellulose/MWCNT-based gas sensors have been studied detecting NOx molecules of a ppm-level at the temperature range of $30{\sim}120^{\circ}C$. The resistance of the sensors decreases when the sensors are exposed to NOx gas. As a results, we obtained the nitrocellulose/MWCNT sensors with the sensitivity of 0.6%/sec under the 0.8 ppm of NOx gas concetration. Also, we get the activation energy of 0.202eV from the sensor for the 0.3 ppm of NOx gas concentration.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.953-956
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• 2009

We have investigated the effect of light on amorphous silicon thin film transistors based photo-sensor applications. We have analyzed the instability caused by electrical gate bias stresses under the light illumination and the effect of photo-induced quasi-annealing on the instability. Threshold voltage ($V_{TH}$) under the negative gate bias stress with light illumination was more decreased than that under the negative gate bias stress without light illumination even though $V_{TH}$ caused by the light-induced stress without negative gate bias was shifted positively. These results are because the increase of carrier density in a channel region caused by the light illumination has the enhanced effect on the instability caused by negative gate bias stress. The prolonged light illumination led to the recovery of shifted VTH caused by negative gate bias stress under the light illumination due to the recombination of trapped hole charges.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Journal of Sensor Science and Technology
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• v.21 no.3
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• pp.223-228
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• 2012

In this study, a fiber-optic pH sensor based on a pH sol-gel film is fabricated. The sol-gel film is made by co-polymerizing tetramethoxysilane, trimethoxymethylsilane, ethanol and distilled water. As a pH indicator, a neutral red is immobilized in a thin porous film formed by the sol-gel process. The pH change in a sensing probe gives rise to a change in the color of the pH sol-gel film, and the absorbance of reflected light through the pH sol-gel film is also changed. By using a spectrometer, therefore, the spectra of reflected lights in the sensing probe with different pH values are measured. Also, the relationships between the pH values and the absorbance are analyzed on the basis of the color variations of the pH sol-gel films. In repeated experiments, the fiber-optic pH sensor shows that it has reversibility, a high reproducibility and a wide absorbance change in a pH range from pH 5 to 9. Also, we confirmed that the fabricated pH sol-gel film exhibits a fast response time, little or no pH indicator leaching and a dynamic range of 2.04 dB from pH 5 to 9. Based on the results of this study, a fiber-optic pH sensor can be developed for the pH monitoring in the harsh environments.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.185.2-185.2
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• 2015

Tin Oxide (SnO2) has been widely investigated as a transparent conducting oxide (TCO) and can be used in optoelectronic devices such as solar cell and flat-panel displays. In addition, it would be applicable to fabricating the wide bandgap semiconductor because of its bandgap of 3.6 eV. There have been concentrated on the improvement of optical properties, such as conductivity and transparency, by doping Indium Oxide and Gallium Oxide. Recently, with development of fabrication techniques, high-qulaity SnO2 epitaxial thin films have been studied and received much attention to produce the electronic devices such as sensor and light-emitting diode. In this study, powder sputtering method was employed to deposit epitaxial thin films on sapphire (0001) substrates. A commercial SnO2 powder was sputtered. The samples were prepared with varying the growth parameters such as gas environment and film thickness. Then, the samples were characterized by using XRD, SEM, AFM, and Raman spectroscopy measurements. The details of physical properties of epitaxial SnO2 thin films will be presented.

• Journal of Industrial and Engineering Chemistry
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• v.67
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• pp.417-428
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• 2018

In this study, we fabricated hierarchically self-assembled thin films composed of graphene oxide (GO) sheets and gold nanoparticles (Au NPs) using the Langmuir-Blodgett (LB) and Langmuir-Schaefer (LS) techniques and investigated their gas-sensing performance. First, a thermally oxidized silicon wafer ($Si/SiO_2$) was hydrophobized by depositing the LB films of cadmium arachidate. Thin films of ligand-capped Au NPs and GO sheets of the appropriate size were then sequentially transferred onto the hydrophobic silicon wafer using the LB and the LS techniques, respectively. Several different films were prepared by varying the ligand type, film composition, and surface pressure of the spread monolayer at the air/water interface. Their structures were observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM), and their gas-sensing performance for $NH_3$ and $CO_2$ was assessed. The thin films of dodecanethiol-capped Au NPs and medium-sized GO sheets had a better hierarchical structure with higher uniformity and exhibited better gas-sensing performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.10
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• pp.731-735
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• 2013

YBCO thin films on $SiO_2$/Si substrate were fabricated by spin-coaing of an alkoxide-derived precursor and heat treatment. The structural and electrical properties of the YBCO films were investigated as functions of annealing temperature at $600{\sim}800^{\circ}C$. Although YBCO single phase was not synthesized, dense films of YBCO matrix phase and minor second phases have been successfully fabricated at the annealing temperatures of $650{\sim}800^{\circ}C$. Thickness and temperature coefficient of resistance (TCR) of YBCO thin films with annealing temperature of $750^{\circ}C$ were 0.31 ${\mu}m$ and $-2.92%/^{\circ}C$, respectively.

• Journal of Sensor Science and Technology
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• v.13 no.3
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• pp.252-257
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• 2004

$Y_{2}O_{3}:Eu^{3+}$ thin films have been grown on $Al_{2}O_{3}$(0001) substrates by a pulsed laser deposition (PLD) method. The phosphor thin films were deposited at a substrate temperature of 500, 600, and $700^{\circ}C$ under the oxygen pressure of 100, 200, and 300 mTorr. The crystallinity, surface roughness and photoluminescence of the films are highly dependent on the substrate temperature and oxygen pressure. The films grown on $Al_{2}O_{3}$(0001) substrate even under the different substrate temperatures and oxygen pressures exhibited (222) preferred orientation. The luminescent spectra exhibited strong luminescence of ${^{5}D_{0}}-{^{7}F_{2}}$ transition within $Eu^{+3}$ peaking at 612 nm. The crystallinity and luminescence intensity of the films have been improved as the substrate temperature increasing. With increase of oxygen pressure from 50 to 300 mTorr, the crystallinity of the films has been uniformly decreased. The photoluminescence intensity and surface roughness have similar behaviors as a function of oxygen pressure. At 200 mTorr, both photoluminescence intensity and surface roughness show a maximum.