• Transactions on Electrical and Electronic Materials
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• v.15 no.3
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• pp.164-169
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• 2014

We investigated the etching characteristics of $HfAlO_3$ thin films in $O_2/Cl_2/Ar$ and $O_2/BCl_3/Ar$ gas, using a high-density plasma (HDP) system. The etch rates of the $HfAlO_3$ thin film obtained were 30.1 nm/min and 36 nm/min in the $O_2/Cl_2/Ar$ (3:4:16 sccm) and $O_2/BCl_3/Ar$ (3:4:16 sccm) gas mixtures, respectively. At the same time, the etch rate was measured as a function of the etching parameter, namely as the process pressure. The chemical states on the surface of the etched $HfAlO_3$ thin films were investigated by X-ray photoelectron spectroscopy. Auger electron spectroscopy was used for elemental analysis on the surface of the etched $HfAlO_3$ thin films. These surface analyses confirm that the surface of the etched $HfAlO_3$ thin film is formed with nonvolatile by-product. Also, Cl-O can protect the sidewall due to additional $O_2$.

• Biomaterials and Biomechanics in Bioengineering
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• v.2 no.2
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• pp.71-84
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• 2015

A low-profile flow sensor has been designed, fabricated, and characterized to demonstrate the feasibility for monitoring hemodynamics in cerebral aneurysm. The prototype device is composed of three micro-membranes ($500-{\mu}m$-thick polyurethane film with $6-{\mu}m$-thick layers of nitinol above and below). A novel super-hydrophilic surface treatment offers excellent hemocompatibility for the thin nitinol electrode. A computational study of the deformable mechanics optimizes the design of the flow sensor and the analysis of computational fluid dynamics estimates the flow and pressure profiles within the simulated aneurysm sac. Experimental studies demonstrate the feasibility of the device to monitor intra-aneurysmal hemodynamics in a blood vessel. The mechanical compression test shows the linear relationship between the applied force and the measured capacitance change. Analytical calculation of the resonant frequency shift due to the compression force agrees well with the experimental results. The results have the potential to address important unmet needs in wireless monitoring of intra-aneurysm hemodynamic quiescence.

• Journal of Sensor Science and Technology
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• v.15 no.3
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• pp.216-221
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• 2006

ZnO thin films prepared by PLD method exhibit an excellent optical property, but may have some problems such as incomplete surface roughness and crystallinity. In this study, undoped ZnO buffer layers were deposited on (0001) sapphire substrates by ultra high vacuum pulse laser deposition (UHV-PLD) and molecular beam epitaxy (MBE) methods, respectively. After post annealing of ZnO buffer layer, undoped ZnO thin films were deposited under different oxygen pressure ($35{\sim}350$ mtorr) conditions. The Arsenic-doped (1, 3 wt%) ZnO thin layers were deposited on the buffer layer of undoped ZnO by UHV-PLD method. The optical property of the ZnO thin films was analyzed by photoluminescence (PL) measurement. The ${\theta}-2{\theta}$ XRD analysis exhibited a strong (002)-peak, which indicates c-axis preferred orientation. Field emission-scanning electron microscope (FE-SEM) revealed that microstructures of the ZnO thin films were varied by oxygen partial pressure, Arsenic doping concentration, and deposition method of the undoped ZnO buffer layer. The denser and smoother films were obtained when employing MBE-buffer layer under lower oxygen partial pressure. It was also found that higher Arsenic concentration gave the enhanced growing of columnar structure of the ZnO thin films.

• Journal of Sensor Science and Technology
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• v.4 no.4
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• pp.81-87
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• 1995

A novel biomaterial capable of incorporating biotinylated biomolecule has been synthesized. Our strategy is to biotinylate one-dimensional electroactive polymers and use a bridging streptavidin protein on Langmuir-Blodgett (LB) organized films. These copolymers are derivatized with long alkyl chains and biotin moieties to bind, respectively, to the hydrophobic surface and the biotinylated species, through the biotin and streptavidin complexation. We utilize the polymer assembly approach to attach a signal transducing biomolecule biotinylated phycoerythrin (B-PE) into this novel biomaterial by binding the unoccupied biotin binding sites on the bound streptavidin (4 sites total). The pressure-area isotherm of the protein injected monolayer showed area expansion. A characteristic fluorescent emission peak at 576nm was detected from the monolayer transferred onto a solid substrate. These observations demonstrated the promise of the organized thin polymer assemblies for their application to the sensor system.

• Journal of Convergence for Information Technology
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• v.12 no.2
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• pp.149-156
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• 2022

In this paper, it was attempted to form a titanium (Ti: Titanium) thin film using the atmospheric pressure plasma process technology for the conductor, which is the main component of the optical sensor. The atmospheric plasma equipment was remodeled. A 4-inch Ti target for sputter was etched using CF4 gas, and the by-product was coated on a glass sample. These by-products were formed up to about 2 cm, and could be divided into 15 areas according to color. Surface shape and constituent elements were analyzed using scanning electron microscopy (SEM) and energy dispersive spectrometer (EDS), respectively. Electrical properties using 4-point probe equipment were also measured. If the process is performed by positioning the sample at about 4.5 mm to 5 mm from the target, a uniform Ti thin film will be deposited. However, it was found that the thin film contained a significant amount of fluorine, which greatly affects the electrical properties of the thin film. Therefore, additional experiments and studies should be performed to remove or minimize fluorine during deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.589-592
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• 1999

This paper describes direct $\mu$C-Si/CaF$_2$/glass thin film growth by RPCVD system in a low temperature for thin film transistor (TFT), photovoltaic devices. and sensor applications. Experimental factors in a low temperature direct $\mu$ c-Si film growth are presented in terms of deposition parameters: SiH$_4$/H$_2$ ratio, chamber total pressure, substrate temperature, rf power, and CaF$_2$ buffer layer. The structural and electrical properties of the deposited films were studied by means of Raman spectroscopy, I-V, L-I-V, X-ray diffraction analysis and SEM. we obtain a crystalline volume fraction of 61%, preferential growth of (111) and (220) direction, and photosensitivity of 124. We achieved the improvement of crystallinity and electrical property by using the buffer layers of CaF$_2$ film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.187-189
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• 1995

A Surface Acoustic Wave Gas sensor for NO, CO, H$_2$gas detection was designed fabricated, and tested. A delay line device was designed to composite a single mode SAW oscillator which enables to measure a SAW velocity. To reduce the effect of temperature and humidity, dual delay line oscillator circuit was used. And final output was measured by digital frequency counter. NO, CO, H$_2$gas were detected by WO$_3$thin film deposited on the path of the Delay Line.

• Journal of Institute of Control, Robotics and Systems
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• v.5 no.8
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• pp.941-947
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• 1999

As pressure transducers are employed in many fields such as production facilities, test facilities vehicles and industrial machinery, there is an increasing need for high precision measurement of pressure without any calibration or maintenance. In this paper, we discuss the development of a smart thin film pressure transducer which is highly suitable for a precise measurement of pressure. The smart functions include automatic zero tracking, automatic span adjustment, temperature compenstion, continuous self-diagnostics for faults (open strain gages, abnormal data, incorrect A/D conversion, and overpressure), data memory and multi-drop communication with PC

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.67-70
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• 1994

On this study, we fabricated humudity sensor with polyimide thin film from the nonaqueous emulsion by the electrophoretic deposition as a function of film thickness. then evaluated performance of the sensor with increasing relative humidity if constant temperature constant humidity chamber, which is electronically controlled. we designed upper electrode of the sensor to brush type to make moisture particles permeate into the polymer bulk. sensing properties of the sensor on % RH shows proportion on the low %RH. Fer the 30V-30S- 200$^{\circ}C$ sample, percentage changing of capacitance on from 30 %RH to 90 %RH is 45.8 %, and increasing rate per 1 % RH of capacitance is 11.25 pF

• Journal of Sensor Science and Technology
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• v.26 no.6
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• pp.438-444
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• 2017

In this paper, we focus on optimization of the in-situ phosphorous (P) doping of low-pressure chemical vapor deposited (LPCVD) poly Si resistors for obtaining near-zero temperature coefficient of resistance (TCR) at temperature range from 25 to $600^{\circ}C$. The deposited poly Si films were annealed by rapid thermal anneal (RTA) process at the temperature range from 900 to $1000^{\circ}C$ for 90s in nitrogen ambient to relieve intrinsic stress and decrease the TCR in the poly Si layer and get the Ohmic contact. After the RTA process, a roughness of the thin film was slightly changed but the grain size and crystallinity of the thin film with the increase in anneal temperature. The film annealed at $1,000^{\circ}C$ showed the behavior of Schottky contact and had dislocations in the films. Ohmic contact and TCR of $334.4{\pm}8.2$ (ppm/K) within 4 inch wafer were obtained in the measuring temperature range of 25 to $600^{\circ}C$ for the optimized 200 nm thick-poly Si film with width/length of $20{\mu}m/1,800{\mu}m$. This shows the potential of in-situ P doped LPCVD poly Si as a resistor for pressure sensor in harsh environment applications.