• 센서학회지
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• 제9권2호
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• pp.90-95
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• 2000

$Si_3N_4/SiO_2/Si_3N_4$/Si 판위에 MgO 박막을 성장하여 MgO 단결정과 결정배향성이 유사한 초전형 적외선 센서용 기판을 제작하였다. RF 마그네트론 스퍼터링법으로 MgO 박막을 성장하였고, 그 위에 Pt 하부전극과 PLT 박막을 성장시킨 후 c축 배향성을 조사하였다. $500^{\circ}C$의 기판온도와 30 mTorr의 분위기 압력 및 160 W의 RF power에서 성장된 MgO 박막이 단결정 MgO가 가지는 배향성 정도의 우수한 a축 배향성을 보였고, 그 위에 성장된 PLT 박막은 MgO 단결정 기판위에 성장된 것과 거의 회절강도 변화가 유사한 c축 배향성을 보였다.

• 한국세라믹학회지
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• 제36권11호
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• pp.1156-1162
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• 1999

• 센서학회지
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• 제23권1호
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• pp.15-18
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• 2014

We present gas sensing performance based on $2{\times}2$ sensor array with four different elements ($TiO_2$, $SnO_2$, $WO_3$ and $In_2O_3$ thin films) fabricated by rf sputter. Each thin film was deposited onto the selected $SiO_2$/Si substrate with Pt interdigitated electrodes (IDEs) of $5{\mu}m$ spacing which were fabricated on a $SiO_2$/Si substrate using photolithography and dry etching. For 5 ppm $NO_2$ and 50 ppm CO, each thin film sensor has a different response to offers the distinguishable response pattern for different gas molecules. Compared with the conventional micro-fabrication technology, $2{\times}2$ sensor array with such remarkable response pattern will be open a new foundation for monolithic integration of high-performance chemoresistive sensors with simplicity in fabrication, low cost, high reliablity, and multifunctional smart sensors for environmental monitoring.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.9-12
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• 1997

The fabrication and performance of a thin film pressure sensor are described. Cu-Ni thin film strain gauges have been fabricated by RF magnetron sputtering. For all the gauges, the relative chance in resistance ΔR/R with pressure is of the order 10$^{-3}$ for the maximum pressure. The output characteristic is found to be linear over the entire Pressure range (0-30kgf/cm$^2$) and the output sensitivity is 1.6 mV/V. The maximum nonlinearity observed in output characteristics is 0.34%FS for 5V excitation and the hysteresis is less than 0.1%FS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.299-302
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• 2000

RTD temperature sensor is a thermoresistor which uses the liner dependence of the resistance of the sensing material on the temperature, and has good stability and sensibility, so it can be used in highly precise temperature measurement. In this study RTD sensor was fabricated using Pt thin film. The Pt thin film was deposited on alumina using DC-Sputter, and annealed with various temperature. Through the experiments of XRD, AFM, 4-point probe, the surface structure of the thin film with annealing conditions and their effects on the electrical resistance were investigated. RTD with serpentine pattern was fabricated using Lift-off and resistance-temperature characteristics were studied.

• 센서학회지
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• 제5권5호
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• pp.39-46
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• 1996

$WO_{3}$에 미량의 Pd 또는 Pt가 첨가된 박막을 이용한 NOx 센서를 제조하였다. $WO_{3}$계 박막은 고진공, 저항가연식 evaporator를 이용하여 분위기온도에서 증착한 다음 $500^{\circ}C$에서 열처리하였다. 5 ppm의 $NO_{2}$가스에 대하여 $200^{\circ}C$에서 측정한 가스감도($R_{gas}/R_{air}$)는 0.5 wt.% $Pt-WO_{3}$ 센서에서 50으로서 최대값을 가졌다.

• Transactions on Electrical and Electronic Materials
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• 제11권2호
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• pp.77-80
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• 2010

Indium tin oxide (ITO) films with a 5 nm thick Au interlayer were prepared on glass substrates. The effects of the Au interlayer on the gas sensitivity for detecting methanol vapors were investigated at room temperature. The conductivity of the film sensor increased upon exposure to methanol vapor and the sensitivity also increased proportionally with the methanol vapor concentration. In terms of the sensitivity measurements, the ITO film sensor with an Au interlayer shows a higher sensitivity than that of the conventional ITO film sensor. This approach is promising in gaining improvement in the performance of ITO gas sensors used for the detection of methanol vapor at room temperature.

• Journal of information and communication convergence engineering
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• 제5권2호
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• pp.116-120
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• 2007

In this paper, the image sensor using the a-Si:H TFT is proposed. The optimum amorphous silicon thin film is deposited using plasma enhanced chemical vapor deposition (PECVD). TFT and photodiode both with the thin film are fabricated and form image sensor. The photodiode shows that $I_{dark}\;is\;{\sim}10^{-13}\;A,\;I_{photo}\;is\;{\sim}10^{-9}\;A\;and\;I_{photo}/I_{dark}\;is\;{\sim}10^4$, respectively. In the case of a-Si:H TFT, it indicates that $I_{on}/I_{off}\;is\;10^6$, the drain current is a few ${\mu}A\;and\;V_{th}\;is\;2{\sim}4$ volts. For the analysis on the fabricated image sensor, the reverse bias of -5 volts in ITO of photodiode and $70 {\mu}sec$ pulse in the gate of TFT are applied. The image sensor with good property was conformed through the measured photo/dark current.

• 센서학회지
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• 제1권2호
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• pp.125-130
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• 1992

습도감지물질로서 PMMA박막을 사용하여 저항형 습도감지소자를 제조하고 그 특성을 조사하였다. PMMA에 DVB를 첨가하여 가교결합을 일으키고 여기에 PVA를 섞어 제조된 습도센서는 상대습도의 증가에 따라 저항의 변화를 나타내었으며, 흡착에 비해 탈착 시 약 3% 미만의 히스테리시스 특성을 나타내었다. 또한 제조된 소자는 좋은 장기안정도를 보였으며, 응답시간은 흡착시에는 약 7분, 탈착시에는 약 5분이었다.

• 센서학회지
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• 제6권3호
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• pp.180-187
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• 1997

We demonstrate the improvement of sensitivity and analysis of operating characteristics of the piezoelectric pressure sensor using ZnO piezoelectric thin film and FET(field effect transistor) for sensing applied pressure and transforming the pressure into electrical signals, respectively. The sensitivity of the PSFET(pressure sensitive field effect transistor) was improved by using highly-oriented ZnO film perpendicular to the substrate surface and the operating characteristics was investigated by monitoring output voltage with time in various static pressure levels.