• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.472-473
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• 2007

The $(Sr_{1-x}Ca_x)TiO_3$(ST) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method with substitutional contents of Ca. The maximum grain of thin films is obtained by substitution of Ca at 15[mol%]. Also, the composition of ST thin films were closed to stoichiometry(1.081~1.117 in A/B ratio). The dielectric constant changes almost linearly in temperature ranges of -80~+90[$^{\circ}C$]. The current-voltage characteristics of ST15 thin films showed the increasing leakage current as the measuring temperature increases.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.516-520
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• 2012

In this paper, we have theoretically analyzed and designed a dielectric multi-layer sensor with a SPR (surface plasmon resonance) using analytical calculation and FDTD (finite difference time-domain) methods. The proposed structure is composed of periodic layer and thin metal film. It has many advantages. One of that is a high sensitivity of the SPR. Another is a high Q-factor of the characteristics in the PhC (photonic crystals) micro-cavity structure. The incident light has double resonance characteristics, because the filtered light by PhC structure, dielectric multi-layer, is met the thin metal film for SPR effect. We have also observed the change of resonance characteristics according to the variation of effective index on the metal film.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.6
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• pp.44-51
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• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.128-128
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.130-130
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• 2005

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.306-306
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• 2008

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.194.2-194
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• 2003

• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.27.1-27
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• 2003

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.7
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• pp.667-672
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• 2006

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT(52/48)) thick films were fabricated by the screen-Printing method on the alumina substrates, and $PbTiO_3$ (PT) Precursor solution, which prepared by sol-gel method, was spin-coated on the PZT(52/48) thick films to obtain a densification. Its structural and electrical properties of the PZT(52/48) thick films with the treatment of PT precursor solution coating were investigated. The particle size of the thick films was increased with increasing the number of coatings and the thickness of the PZT-6 (6: number of coatings) films was about $60{\mu}m$. The relative dielectric constant increased and the dielectric loss decreased with increasing the number of PT sol coatings. The relative dielectric constant and dielectric loss of the PZT-6 thick film were 475 and 2 %, respectively. The remanent polarization, coercive field and breakdown strength of the PZT-6 film were $32.6{\mu}C/cm^2$, 15 kV/cm and 60 kV/cm, respectively.

• Journal of the Korean Society for Nondestructive Testing
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• v.32 no.4
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• pp.393-400
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• 2012

In recent years, nano-structured thin film systems are often applied in industries such as MEMS/NEMS device, optical coating, semiconductor or like this. Thin films are used for many and varied purpose to provide resistance to abrasion, erosion, corrosion, or high temperature oxidation and also to provide special magnetic or dielectric properties. Quite a number of articles to evaluate the characterization of thin film structure such as film density, film grain size, film elastic properties, and film/substrate interface condition were reported. Among them, the evaluation of film adhesive to substrate has been of great interest. In this study, we fabricated the polymeric thin film system with different adhesive conditions to evaluate the adhesive condition of the thin film. The nano-structured thin film system was fabricated by spin coating method. And then V(z) curve technique was applied to evaluate adhesive condition of the interface by measuring the surface acoustic wave(SAW) velocity by scanning acoustic microscope(SAM). Furthermore, a nano-scratch technique was applied to the systems to obtain correlations between the velocity of the SAW propagating within the system including the interface and the shear adhesive force. The results show a good correlation between the SAW velocities measured by acoustic spectroscope and the critical load measured by the nano-scratch test. Consequently, V(z) curve method showed potentials for characterizing the adhesive conditions at the interface by acoustic microscope.