• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.258-258
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• 2008

Among several available high-k dielectrics the lanthanum zirconium oxide ($LaZrO_x$) system is very attractive as a buffer insulating layer. Because both lanthanum and zirconium atoms, the constituents of the $LaZrO_x$ thin film, have been considered to be thermally stable in contact with Si. The $LaZrO_x$ films were deposited by a sol-gel method. After the deposition, The $LaZrO_x$ films were crystallized at $750^{\circ}C$ for 30 minutes in $O_2$ ambient. PVDF-TrFE films were deposited on these $LaZrO_x$/Si structures using a sol-gel technique. The sol-gel solution was spin-coated on $LaZrO_x$/Si structures at 500 rpm for 5 sec and 2500 rpm for 15 sec. The deposited layer was dried at $165^{\circ}C$ for 30 min in air on a hot-plate. Then, we deposited Au electrode on PVDF-TrFE films using thermal evaporation.

• 전기의세계
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• v.25 no.1
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• pp.95-100
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• 1976

The main purpose of this paper is to study on the transient current due to the change of environmental temperature under no external field in the arrangement of M$_{1}$(metal)-P(polyver)-M$_{2}$(metal). The specimer of polymeric insulator sandwiched by two metal electrodes composes a parallel-plate condenser represented by Maxwell-model. The behaviors of short circuit current flowing in M-P-M arrangement are very complex and the analysis of its conduction mechanism appears to be much complicated. In this paper we can suggest that a contact potential difference as an energetic state exists in the thin film specimen both sides of which are contacted by two different metals having different cook functions. Futhermore the contact potential difference appears to be constant through the course of temperature change, however, the dielectric constant and caparitance of the specimen must be temperature dependent. Accordingly the charge difference induced on both sides of electrodes may be a cause for the shory circuited transient current flowing through the external circuit. It is also suggestive that the results of the observation must be considered in cases of insulation design of electrical machines and D.C. cable for high voltage use.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.123-124
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• 2006

The sandwiched PZT/$BaTiO_3$/PZT thick films were fabricated by two different methods thick films of the PZT by screen printing method on alumina substrateselectrodes with Pt, thin films of $BaTiO_3$ by the spin-coating method on the PZT thick films and once more thick films of the PZT by the screen printing method on the $BaTiO_3$ layer. The structural and the dielectric properties were investigated for effect of various stacking sequence of sol-gel prepared $BaTiO_3$ coating solution at interface of the PZT thick films, The insertion of BaTi03 interlayer yielded the PZT thick films with homogeneous and dense grain structure with the number of $BaTiO_3$ layers. The leakage current density of the $PZT/BaTiO_3-1$ film is less that $4.41{\times}10^{-9}A/cm^2$ at 5 V.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.15.2-15.2
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• 2009

Manufacturing of printed electronics using printing technology has begun to get into the hot issue in many ways due to the low cost effectiveness to existing semi-conductor process. This technology with both low cost and high productivity, can be applied in the production of organic thin film transistor (OTFT), solar cell, radio frequency identification (RFID) tag, printed battery, E-paper, touch screen panel, black matrix for liquid crystal display (LCD), flexible display, and so forth. The emerging technology to manufacture the products in mass production is roll-to-roll printing technology which is a manufacturing method by printings of multi-layered patterns composed of semi-conductive, dielectric and conductive layers. In contrary to the conventional printing machines in which printing precision is about $50~100{\mu}m$, the printing machines for printed electronics should have a precision under $30{\mu}m$. In general, in order to implement printed electronics, narrow width and gap printing, register of multi-layer printing by several printing units, and printing accuracy of under $30{\mu}m$ are all required. We developed the roll-to-roll printing equipment used for printed electronics, which is composed of un-winder, re-winder, tension measurement system, feeding units, dancer systems, guide unit, printing unit, vision system, dryer units, and various auxiliary devices. The equipment is designed based on cantilever type in which all rollers except printing ones have cantilever types, which could give more accurate machine precision as well as convenience for changing rollers and observing the process.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.1
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• pp.103-109
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• 2004

In this paper, a new modeling methodology of thin film bulk acoustic resonator(TFBAR) is presented and the formulations of each lumped element in the model are also introduced. The new model is based upon the Mason model that is a reasonable model to explain the physical characteristics of unit TFBAR. After simplifying the modified Mason model with an additional dielectric loss term, the new model similar to Modified Butterworth-Van Dyke(MBVD) model is complete. The proposed model has three optimization variables which is half of the MBVD model. As a result, the curve fittings for the measured data are much faster and more accurate than any other conventional models. Moreover, it is very useful to design the bandpass filters or voltage controlled oscillators due to the design parameters, such as resonant and anti-resonant frequency, which can reflect the intentions of designer in the model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.177-178
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• 2007

본 연구에서는 MIM (Metal-Insulator-Metal) capacitor의 유전 물질로 사용되는 $Ba_xTi_yO_z$(BTO) 박막의 식각 특성을 고찰하였다. $Cl_2$/Ar 혼합가스를 이용하여 Inductively Coupled Plasma(ICP)에서 BTO 박막을 식각하였고, 식각된 BTO박막의 표면을 X-ray photoelectron spectroscopy(XPS) 분석하였다. BTO박막의 식각 속도는 Ar이 80%인 식각 조건에서 31.7nm/min의 식각 속도를 추출하였고, 동시에 Pt박막에 대한 높은 선택비를 얻었다. X-ray photoelectron spectroscopy (XPS) 분석 결과로부터 표면 반응을 조사하여, 식각 기구를 고찰하였다.

• Proceedings of the KIEE Conference
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• 2005.07b
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• pp.1123-1125
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• 2005

본 논문에서는 3차원 공간에 종이와 같은 박막형 유전체가 있을 때 임의의 점에서의 전계$\vec{E}$를 구하기 위해 유전체의 분극벡터$\vec{P}$를 미지수로 하는 경계적분법(Boundary integral method)을 사용한다. 경계적분법의 사용으로 FEM 3차원 해석에 있어서의 요소분할의 난이성 및 계수 행렬의 대형화로 인한 컴퓨터 수행능력의 한계를 극복할 수 있다. 여기서 분극벡터$\vec{P}$를 구하기 위해 전하에서의 전계${ves{E}}_s$에 의한 유전체내의 분극벡터$\vec{P}$를 수식으로 정리하여 $[\vec{K}][\vec{P}]=[\vec{E}]$ 형태의 $\vec{P}$를 미지수로 하는 system matrix를 구성한다. 위의 system matrix 통해 구해진 분극벡터 $\vec{P}$를 이용하여 유전체 밖의 한 점에서의 전계세기 ${\vec{E}}_m$를 구한 후 우리가 구하고자 하는 전계$\vec{E}$를 계산한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.122-122
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• 2000

Magnesium oxide is thermodynamically very stable, has a low dielectric constant and a low refractive index, and has been widely used as substrate for growing various thin film materials, particulary oxides of the perovskite structure. There has been a considerable interest in integrating the physical properties of these oxides with semiconductor materials such as GaAs and Si. In this regard, it is considered very important to be able to grow MgO buffer layers epitaxially on the semiconductors. Various oxide films can then be grown on such buffer layers eliminating the need for using MgO single crystal substrates. Vapor phase epitaxy of magnesium oxide has been accomplished on Si(001) substrates in a high vacuum chamber using the single precursor methylmagnesium tert-butoxide in the temperature range 750-80$0^{\circ}C$. For the epitaxy of the MgO films, SiC buffer layers had to be grown on Si(001). The films were characterized by reflection high energy electron diffraction (RHEED) in situ in the growth chamber, and x-ray diffraction (XRD), x-ray pole figure analysis, scanning electron microscopy (SEM), and x-ray photoelectron spectroscopy (XPS) after the growth.

• Journal of the Microelectronics and Packaging Society
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• v.28 no.3
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• pp.33-38
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• 2021

Recently, rollable and foldable displays are attracting great attention in the flexible display market due to their excellent form factor. To predict and prevent the mechanical failure of the display panels, it is essential to accurately understand the mechanical properties of brittle SiN_x thin films, which have been used as an insulating film in flexible displays. In this study, tensile properties of the ~130 nm- and ~320 nm-thick SiN_x thin films were successfully measured by coating a ~190 nm-thick organic nano-support-layer (PMMA, PS, P3HT) on the fragile SiN_x thin films and stretching the films as a bilayer state. Young's modulus values of the ~130 nm and ~320 nm SiN_x thin films fabricated through the controlled chamber pressure and deposition power (A: 1250 mTorr, 450 W/B: 1000 mTorr, 600 W/C: 750 mTorr, 700 W) were calculated as A: 76.6±3.5, B: 85.8±4.6, C: 117.4±6.5 GPa and A: 100.1±12.9, B: 117.9±9.7, C: 159.6 GPa, respectively. As a result, Young's modulus of ~320 nm SiN_x thin films fabricated through the same deposition condition increased compared to the ~130 nm SiN_x thin films. The tensile testing method using the organic nano-support-layer was effective in the precise measurement of the mechanical properties of the brittle thin films. The method developed in this study can contribute to the robust design of the rollable and foldable displays by enabling quantitative measurement of mechanical properties of fragile thin films for flexible displays.

• Journal of the Korean Vacuum Society
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• v.12 no.1
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• pp.40-45
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• 2003

High quality $Ta_2O_5$ thin films have been obtained from the anodization of deposited tantalum (Ta). The as-deposited amorphous films of 750 $\AA$ thickness have excellent electrical properties. These properties include refractive indices 2.1~2.2 dielectric constants ~25, and leakage currents $10^{-8}$ /A$\textrm{cm}^{-2}$ at 1 MV$\textrm{cm}^{-1}$. We fabricated a MIM element with the $Ta_2O_5$ films. They have perfect current-voltage symmetry characteristics. A high performance MIM device was formed by newly developed processes based on our unique anodization and annealing treatment. The effects of various processing conditions (top-electrode metals, annealing conditions) on the MIM device performances will be extensively discussed throughout this work.