• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.99.1-99.1
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• 2010

Many efforts on the surface sulfurization of $Cu(InGa)Se_2$ (CIGS)thin films have been reported as techniques to improve CIGS solar cell performance. We have investigated the sulfurization technique using the sulfur vapor. The co-evaporated $Cu(In,Ga)Se_2$ tin film was used for sulfurization. A thin $Cu(In,Ga)(S,Se)_2$ layer was grown on the surface of the CIGS thin film after high-temperature annealing in sulfur vapor. The structural and compositional properties of the thin films were studied by XRD, EDS and AES analysis. The obtained results revealed that the surface modification technique is promising method to S incorporated into CIGS absorber.

• Current Photovoltaic Research
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• v.4 no.1
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• pp.16-20
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• 2016

$Cu_2ZnSnS_4$ (CZTS) thin films were fabricated by successive electrodeposition of layers of precursor elements followed by sulfurization of an electrodeposited Cu-Zn-Sn precursor. In order to improve quality of the CZTS films, we tried to optimize the deposition condition of absorber layers. In particular, I have conducted optimization experiments by changing the Cu-layer deposition time. The CZTS absorber layers were synthesized by different Cu-layer conditions ranging from 10 to 16 minutes. The sulfurization of Cu/Sn/Zn stacked metallic precursor thin films has been conducted in a graphite box using rapid thermal annealing (RTA). The structural, morphological, compositional, and optical properties of CZTS thin films were investigated using X-ray diffraction (XRD), Field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and X-ray Flourescenece Spectrometry (XRF). Especially, the CZTS TFSCs exhibits the best power conversion efficiency of 4.62% with $V_{oc}$ of 570 mV, $J_{sc}$ of $18.15mA/cm^2$ and FF of 45%. As the time of deposition of the Cu-layer to increasing, the properties were confirmed to be systematically changed. And we have been discussed in detail below.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.440-448
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• 2004

In this paper, to make a solar cell of II-Ⅵ ZnTe compound semiconductor, we studied for the property of the transparent electrode(AZO) and Buffer layer(ZnO), and for reducing the energyband gap of optical absorber layer which are most effective on its efficiency. The ZnTe thin film was used the optical absorber layer of solar cell. Zn and Te were deposited using the co-sputtering method. The thin film was sputtered RF power of Zn/50W and Te/30W, respectively and a substrate temperature of foot under Ar atmosphere of 10mTorr. The energy band gap of the thin film was 1.73ev Then the thin film was annealed at $400^{\circ}C$ for 10sec under a vacuum atmosphere. The energy band gap of 1.67eV was achieved and the film composition ratio of Zn and Te was 32% and 68%. At the best condition, the Solar Cell was manufactured and the efficiency of 6.85% (Voc: 0.69V, Jsc: 21.408㎃/$cm^2$, Fill factor (FF): 0.46) was achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.820-824
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• 2014

TiNOx multi-layer thin films on aluminum substrates were prepared by DC reactive magnetron sputtering method. 4 multi-layers of $TiO_2$/TiNOx(LMVF)/TiNOx(HMVF)/Ti/substrate have been prepared with ratio of Ar and ($N_2+O_2$) gas mixture. $TiO_2$ of top layer is anti-reflection layer on double TiNOx(LMVF)/TiNOx(HMVF) layers and Ti metal of infrared reflection layer. In this study, the crystallinity and surface properties of TiNOx thin films were estimated by X-ray diffraction(XRD) and field emission scanning electron microscopy(FE-SEM), respectively. The grain size of TiNOx thin films shows to increase with increasing sputtering power. The composition of thin films has been investigated using electron probe microanalysis(EPMA). The optical properties with wavelength spectrum were recorded by UV-Vis-NIR spectrophotometry at a range of 200~1,500 nm. The TiNOx multi-layer films show the excellent optical performance beyond 9% of reflectance in those ranges wavelength.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.235-236
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• 2008

Wet etched ZnO:Al films for thin film solar cells were prepared by Facing Target sputtering(FTS) method. Wet etching has been used to produce a rough TCO surface that enables light trapping in the absorber. The ZnO:Al films for thin film solar cells were etched by HCl 0.5%. The etching performance of ZnO:Al films can be tuned by changing etching time. The etched ZnO:Al films compared to a smooth ZnO:Al thin film structure. From the results, the lowest resistivity of deposited films was $5.67\times10^{-4}$ [$\Omega$-cm] and the transmittance of all ZnO:Al thin films were over 80% in visible range.

• Journal of Surface Science and Engineering
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• v.48 no.4
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• pp.169-173
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• 2015

$CuInSe_2$ thin films which have been widely used for thin solar cells as a light absorber were prepared by hydrazine solution processing, and their microstructural properties were investigated. Hydrazine $CuInSe_2$ precursor solutions were prepared by dissolving $Cu_2S$, S, $In_2Se_3$ and Se powder in hydrazine solvent. Multilayer $CuInSe_2$ chalcopyrite phase thin films were prepared by repeating spin-coating process using the precursor solution. Unfortunately, the presence of the interfaces between each $CuInSe_2$ layer formed by multi-layer coating impeded grain growth across the interface. Here, by doing simple interface engineering to solve the limited grain growth issue, the large grained (${\sim}1{\mu}m$) $CuInSe_2$ thin films were obtained.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.147.2-148
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• 2016

Light management technology is very important for thin film solar cells, which can reduce optical reflection from the surface of thin film solar cells or enhance optical path, increasing the absorption of the incident solar light. Using proper light trapping structures in hydrogenated amorphous silicon (a-Si:H) solar cells, the thickness of absorber layers can be reduced. Instead, the internal electric field in the absorber can be strengthened, which helps to collect photon generated carriers very effectively and to reduce light-induced loss under long-term light exposure. In this work, we introduced a chemical etching technology to make honey-comb textures on glass substrates and analyzed the optical properties for the textured surface such as transmission, reflection and scattering effects. Using ray optics and finite difference time domain method (FDTD) we represented the behaviors of light waves near the etched surfaces of the glass substrates and discussed to obtain haze parameters for the different honey-comb structures. The simulation results showed that high haze values were maintained up to the long wavelength range over 700 nm, and with the proper design of the honey-comb structure, reflection or transmission of the glass substrates can be enhanced, which will be very useful for the multi-junction (tandem or triple junction) thin film a-Si:H solar cells.

• Current Photovoltaic Research
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• v.2 no.3
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• pp.88-94
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• 2014

The structural, optical and electrical properties of sputter-deposited CIGS films were directly influenced by the sputtering process parameters such as substrate temperature, working pressure, RF power and distance between target and substrate. CIGS thin films deposited by using a quaternary target revealed to be Se deficient due to Se low vapor pressure. This Se deficiency affected the overall stoichiometry of the films, causing the films to be Cu-rich. Current tends to pass through the Cu-Se channels which act as the shunting path increasing the film conductivity. The crystal structure of CIGS thin films depends on the substrate orientation due to the influence of surface morphology, grain size and stress of Mo substrate. The excess of Cu was removed from the CIGS films by KCN treatment, achieving a suitable Cu concentration (referred as Cu-poor) for the fabrication of solar cell. Due to high Cu concentrations on the CIGS film surface induced by Cu-Se phases after CIGS film deposition, KCN treatment proved to be necessary for the fabrication of high efficiency solar cells. Also during KCN treatment, dislocation density and lattice parameter decreased as excess Cu was removed, resulting in increase of bandgap and the decrease of conductivity of CIGS films. It was revealed that Cu-Se secondary phase could be removed by KCN wet etching of CIGS films, allowing the fabrication of high efficiency absorber layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.1
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• pp.6-11
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• 2019

Methylammonium lead halide ($MAPbX_3$, X = I, Br) thin films, used as the light absorber of perovskite solar cells, were prepared using the dual feed ultrasonic spray method. Going through a deposition at a substrate temperature of below $60^{\circ}C$ and then a final heat treatment at $75^{\circ}C$ for 5 minutes using dual feed ultrasonic spray method, $MAPbI_3$ single phase could be formed. Whereas undergoing a deposition at temperatures above $80^{\circ}C$, the spheroidal grains could be changed into rod-shaped fractal structures due to the decomposition of the perovskite phase. Furthermore, using the same method at a higher heat treatment temperature of $100^{\circ}C$, $MAPbI_{3-x}Br_x$ thin films could also be formed from $MAPbI_3$ and $MAPbIBr_2$ solution.

• Current Photovoltaic Research
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• v.10 no.4
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• pp.101-106
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• 2022

We prepared a CsPbI₂Br solution using Cesium iodide (CsI), Lead (II) bromide (PbBr₂) and Lead (II) iodide (PbI₂) materials into a polar solvent mixture of N,N-dimethylformamide (DMF) and Dimethyl sulfoxide (DMSO). A simple spin coating technique was used for the fabrication of CsPbI₂Br absorber layer in the solution process. In order to prepare uniform coating of absorber film we adopted a hot-air process in assocation with the spin coating. It was confirmed that the thin film manufactured by the hot-air process had a higher absorption rate than that without it, and the optical band gap was measured 1.93 eV. The thin film of absorber was uniformly prepared and revealed the Black α-Cubic crystal phase as proved through X-ray diffraction analysis. Finally, a perovskite solar cell having an n-i-p structure was manufactured with a CsPbI₂Br perovskite absorption layer. From the solar cell, we obtained a power conversion efficiency (PCE) of 5.97% in a forward measurement.