• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.5
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• pp.351-355
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• 2001

Via for achieving reliable fabrication of MCM(Multichip Module) substrate was formed on photosensitive BCB layer. The MCM substrate consists of photosensitive BCB(Benzocyclobutene) interlayer dielectric and copper conductors. In order to form the vias in the photosensitive BCB layer, the process of forming the BCB layer and its via forming plasma etch using C$_2$F$\_$6//O$_2$ gas were evaluated. The thickness of the BCB layer after hard bake was shrunk down to 40% of the original. The resolution of vias formed on the BCB was 15㎛ and the slope after develop was 85 degree. AES analysis was done on two vias, one is etched in C$_2$F$\_$6/O$_2$ gas and the other isnot etched. On the via etched in C$_2$F$\_$6//O$_2$, native C was detected and the amount of native C was reduced after Ar sputter. On the via not etched in C$_2$F$\_$6//O$_2$, organic C was detected. As a result of AES, BCB residue was not removed by Ar sputter, so plasma etch is necessary for achieving reliable vias.

• Electrical & Electronic Materials
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• v.8 no.5
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• pp.558-563
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• 1995

Dynamic characteristics of TbFeCo magneto-optical recording media at 680nm wavelength region were studied by means of computer simulation of disc structure and optimization of process variables during sputter deposition. With the slightly reduced Kerr rotation angle due to the reduced wavelength of optical laser source, the improved recording density in TbFeCo magneto optical media showing the CNR greater than 50dB could be achieved by only adjusting the thickness of dielectric and the recording layers when the wavelength of light source is changed from 780nm to 680nm. In addition, the recording power margin of 5mW and the 2mW minimum recording power was realized, It was shown from the present study that the increase in laser power density demonstrated feasibility of low cost and low power laser diode with the reduced optimum recording power.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.245-247
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• 1996

The ferroelectric $Pb(Zr_xTi_{1-x})O_3$ (20/80, 80/20) heterolayered thin films were fabricated from an alkoxide-based by Sol-Gel method. The PZT(20/80) and PZT(80/20) stock solution were made and spin-coated on the Pt/Ti/$SiO_2$/Si substrate by turns. Each layers were baked to remove the organic materials at 300[$^{\circ}C$] for 30[min]. and sintered at 650[$^{\circ}C$] for 1[hr]. This procedure was repeated 5 times. At this time the thickness of thin films were about 4000[$\AA$]. Relative dielectric constant and remanent polarization of the PZT heterolayered thin films were 1200, 27.10 [${\mu}C/cm^2$], respectively.

• Composites Research
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• v.15 no.2
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• pp.18-23
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• 2002

The absorption and the interference shielding of the problems thor both commercial and military purposes. In this study, the minimization of the electromagnetic wale reflections using composite layers with different dielectric properties was performed. Dielectric constants were measured for glass/epoxy composites containing conductive carbon blacks and carbon/epoxy fabric composites. Using the measured permittivities of the composites having various carbon black contents, the optimal electromagnetic wave absorbing structure in X-band(8.2GHz-12.4GHz) was determined. The optimal multi-layered composite plates have the thickness of 2.6mm. The maximum reflection loss is -30dB at 10GHz, and the bandwidth haying the absorptivity lower than -l0dB is about 2GHz.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2004.05a
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• pp.113-116
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• 2004

The materials showing high structure dispersion with functional properties were developed on the quartz base and those were obtained by mechano-chemical reaction technology. Depending on the processing conditions and subsequent applications the materials produced by mechano-chemical reaction show concurrently magnetic, dielectric and electrical properties. The obtained magnetic-electrical powders classified by aggregate complex of their features as segnetomagnetics, containing a dielectric material as a carrying nucleus, particularly the quartz on that surface one or more layers of different compounds were synthesized having thickness up to 10~50 nm showing magnetic, electrical properties and others. The similarity of the structure of surface layers of quartz particles subjected to mechano-chemical processing and nano-structure cluspol (clusters in a polymer matrics) material was also confirmed by the fact that the characteristics of ferromagnetic quartz of insulating nano-composite powder were changed with time, after its preparing process was completed. The magnetic permeability of the sample was decreasing within first two months down by 15~20 %. Then, the magnetic characteristics were almost stabilized steadily and continuously. The observed changes were related with defective structure of the particles, elastic stress relief, and changes of electron density and magnetic moment in deformation zones. This process of stabilization of the investigated properties could be intensified by the thermal annealing heat treatment in short time period of the nano-composite quartz powders at the temperature ranges of 100~15$0^{\circ}C$.

• Korean Journal of Optics and Photonics
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• v.33 no.6
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• pp.260-266
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• 2022

A diffraction grating structure composed of two matching layers and two grating layers was formed, and a diffraction grating with high transmission diffraction efficiency in the -1st order was designed through an optimization technique. The designed diffraction grating had a transverse electric wave diffraction efficiency of 99.997% at the design center wavelength, and had a wavelength width of 80 nm and an incident angle width of 20.0° that maintained a diffraction efficiency of 95% or more. By performing the grating tolerance analysis, it was confirmed that the thickness tolerance for a diffraction efficiency of 95% or more was secured to at least 60 nm, and the diffraction efficiency could be maintained even in a trapezoidal shape with an internal angle of less than 10°.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.7-12
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• 1995

When a $Ta_O_5$ dielectric film is deposited on a bare silicon, the growth of $SiO_2$ at the $Ta_O_5$/Si interface cannot be avoided. Even though the $SiO_2$ layer is ultrathin (a few nm), it has great effects on the electrical properties of the capacitor. The concentration depth profiles of the ultrathin interfacial $SiO_2$ and $SiO_2/Si_3N_4$ layers were obtained using an Auger electron spectroscopy (AES) equipped with a cylindrical mirror analyzer (CMA). These AES depth profiles were quantitatively analyzed by comparing with the theoretical depth profiles which were obtained by considering the inelastic mean free path of Auger electrons and the angular acceptance function of CMA. The direct measurement of the interfacial layer thicknesses by using a high resolution cross-sectional TEM confirmed the accuracy of the AES depth analysis. The $SiO_2/Si_3N_4$ double layers, which were not distinguishable from each other under the TEM observation, could be effectively analyzed by the AES depth profiling technique.

• Journal of the Korean Ceramic Society
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• v.43 no.1 s.284
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• pp.42-47
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• 2006

In this paper, we prepared high-quality ZnO thin films for application of FBAR (Film Bulk Acoustic Resonator) by using pulse DC magnetron sputtering. To prevent the formation of low dielectric layers between metal and piezoelectric layer, Ru film of 30 nm thickness was used as a buffer layer. In addition we investigated the influence of annealing condition with various temperatures. As the annealing temperature increased, the crystalline orientation with the preference of (002) c-axis and resistance properties improved. The single resonator which was fabricated at $500^{\circ}C$ exhibited the resonance frequency and the return loss 0.99 GHz and 15 dB, respectively. This work demonstrates potential feasibility for the use of thin film Ru buffer layers and the optimization of annealing condition.

• Structural Engineering and Mechanics
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• v.58 no.2
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• pp.347-378
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• 2016

Within the scope of the plane-strain state, by utilizing the three-dimensional linearized theory of elastic waves in initially stressed piezoelectric and elastic materials, Lamb wave propagation and the influence of the initial stresses on this propagation in a sandwich plate with pre-stressed piezoelectric face and pre-stressed metal elastic core layers are investigated. Dispersion equations are derived for the extensional and flexural Lamb waves and, as a result of numerical solution to these equations, the corresponding dispersion curves for the first (fundamental) and second modes are constructed. Concrete numerical results are obtained for the cases where the face layers' materials are PZT-2 or PZT-6B, but the material of the middle layer is Steel (St) or Aluminum (Al). Sandwich plates PZT-2/St/PZT-2, PZT-2/Al/PZT-2, PZT-6B/St/PZT-6B and PZT-6B/Al/PZT-6B are examined and the influence of the problem parameters such as piezoelectric and dielectric constants, layer thickness ratios and third order elastic constants of the St and Al on the effects of the initial stresses on the wave propagation velocity is studied.