• Journal of the Korean Vacuum Society
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• v.5 no.2
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• pp.161-168
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• 1996

For the improvement of microelectronic thin film interconnection materials, dielectric passivation effects on the electromigration phenomena were studied. Using Al-1%Si, various shaped patterns were fabricated and dielectric passivation layers of several structures were deposited on the $SiO_2$ layer. Lifetime of straight pattern showed 2~5 times longer than the other patterns that had various line width and area. It is believed that the flux divergence due to the structural inhomogeneity and so the current crowding effects shorten the lifetime of thin film interconnections. The lifetime of thin film interconnections seems to depend on both the passivation materials and the passivation thickness. PSG/$SiO_2$ dielectric passivation layers showed longer lifetime than $Si_3N_4$ dielectric passivation layers. This results from the PSG on $SiO_2$ layer reduces stress and from the improvement of resistance to the moisture and to the mobile ion such as sodium. This is also believed that the lifetime of thin film interconnections seems to depend on the passivation thickness in case of the same deposition materials.

• The Journal of the Convergence on Culture Technology
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• v.9 no.3
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• pp.721-726
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• 2023

In this paper, TM electromagnetic scattering problems for conductive strip grating between grounded double dielectric layers are analyzed by applying the FGMM(fourier galerkin moment method) and PMM(point matching method) known as a numerical method of electromagnetic field. The boundary conditions are applied to obtain the unknown field coefficients. In order to deal with the problem of grounded double dielectric layers, numerical calculation was performed only when the thickness and relative permittivity of the dielectric layers had the same value. As the thickness of the dielectric layer and the relative permittivity increased, the overall reflected power increased, and the minimum values of the reflected power shifted in the direction of increasing the strip width. The numerical results obtained by applying the numerical methods of FGMM and PMM to the structure proposed in this paper agree very well.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.227-230
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• 2004

Phosphor layers on rear plate of PDP were formed via osmosis coating process in an attempt to improve thickness uniformity of phosphor layer and eventually to enhance luminance and its efficiency of plasma display panel. The phosphor layers were formed uniformly not only on the sidewalls of barrier ribs but also on the dielectric layer of rear plate by the process. The processing parameters affecting the thickness uniformity of the phosphor layer formed by the osmotic coating process were investigated.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.217-221
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• 2000

The gate oxide thickness is becoming thinner and thinner in order to speed up the semiconductor CMOS devices. We have investigated very thin$ SiO_2$ gate oxide layers and found anomaly between the thickness determined with capacitance measurement and these obtained with cross-sectional high resolution transmission electron microscopy. The thicknesses difference of the two becomes important for the thickness of the oxide below 5nm. We propose that the variation of dielectric constant in thin oxide films cause the anomaly. We modeled the behavior as (equation omitted) and determined $\varepsilon_{bulk}$=3.9 and $\varepsilon_{int}$=-4.0. We predict that optimum $SiO_2$ gate oxide thickness may be $20\AA$ due to negative contribution of the interface dielectric constant. These new results have very important implication for designing the CMOS devices.s.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.11
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• pp.44-51
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• 1995

Homogeneous, compositionally graded, and superlattice-like silicon oxynitride(SiON) dielectric layers, with the refractive index varying from 1.46 to 2.05 as a function of film thickness, were grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. An antireflection(AR) coating and thin-film electroluminescent(TFEL) devices with multiple dielectrics were designed and fabricated using real time control of reactant gases of the PECVD system.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.440-440
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• 2012

The optical characteristics of transparent electrode with various kind of materials and thickness to be used for organic photovoltaic cells were studied by simulation methodology. It demonstrated that the transmittance varies with the kinds of materials, the number of layers and change in the thickness of each layer. In the case of the structure composed of dielectric/Ag/dielectric, optimized transmittance was higher than 90% at 550 nm and the thickness of the Ag layer was ~10nm. Top and bottom dielectric materials can be changed with different refractive index and extinction coefficient. The relation between the optical transmittance of device and transparent electrode with different refractive indices was discussed as well. By processing numerical simulations, an optimized optical transmittance can be obtained by tunning the thickness and materials of transparent electrode.

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.145-151
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• 1994

The multi-dielectric layer SiOz/Si3N4/SiO2(ONO) is used to scale down the memory device. In this paper, the change of composition in ONO layer due to the process condition and the conduction mechanism are observed. The composition of the oxide film grown through the oxidation of nitride film is analyzed using auger electron spectroscopy(AES). AES results show that oxygen concentration increases at the interface between oxide and nitride layers as the thickness -of the top oxide layer increases. Results of I-V measurement show that the insulating properties improve as the thickness of the top oxide layer increases. But when the thickness of the nitride layer decreases below 63.angs, insulating peoperties of film 28.angs. of top oxide and film 35.angs. turn over showing that insulating property of film 28.angs. of top oxide is better than that of film 35.angs. of top oxide. This phenomenon of turn over is thought as the result of generation of surface state due to oxygen flow into nitride during oxidation process. As the thickness of the top oxide and nitride increases, the electrical breakdown field increases, but when the thickness of top oxide reaches 35.angs, the same phenomenon of turn over occurs. Optimum film thickness for scaled multi-layer dielectric of memory device SONOS is estimated to be 63.angs. of nitride layer and 28.angs. of top oxide layer. In this case, maximum electrical breakdown field and leakage current are 18.5[MV/cm] and $8{\times}{10^-12}$[A], respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1143-1146
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• 2003

This paper was simulated the electric field distribution in dielectric tube with two layers and spherical dielectric in water. The reactor was made up of the spherical dielectric that is diameter : 2.5[mm], ${\epsilon}_r$ : 5, 25, 100, 1000, 5000 respectively and two glass plate being 2[mm] thickness, ${\epsilon}_r$ : 5 as electrode. The discharge gap was 9[mm]. As a result of the simulation, in case of being about the same value between the dielectric constant of spherical dielectric and water, when the reactor was applied to high voltage, dielectric polarization characteristic was trending toward disappearance. To get more strong electric field, the dielectric constant should be higher comparatively, Increasing the spherical dielectric constant, the location of equippotential line was shifting from the interior to the exterior.

• Journal of the Korean Magnetics Society
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• v.4 no.3
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• pp.249-255
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• 1994

Magneto-optical disks with dielectric layers for optical tunning are useful for maximizing the SNR. We have developed a computer program based on characteristic matrix to investigate the best combination of the film thicknesses. We have optimized the thicknesses of the multilayers which were composed of TbFeCo, dielectric, and AI layers at the wavelengh of 830nm. The criterion for the optimization of the film thickness was to maximize the figure of merit with maintaining the low ellipticity and rmre than 10% reflectivity.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.39-44
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• 1999

The dielectric layers in AC plasma display panel(PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric breakdown voltage, and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric breakdown voltage and transparency of the dielectric layer under various conditions. As a result, on the $15\mum$ thickness, the minimum dielectric breakdown voltage was 435V and the transmission coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15\mum$ because it has about 75V margin on the maximum applied voltage.