• Journal of Welding and Joining
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• 제20권6호
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• pp.106-106
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• 2002

This study investigated variations of micro-structures and mechanical properties of Ti / STS321L joint with various bonding temperature and time using brazing method. According to increasing bonding temperature and time, it was observed that the thickness of their reaction layer increased due So increasing diffusion rate and time. From the EPMA results, Ti diffused to the STS321L substrate according to increasing bending time to 30min. Hardness of bonded interface increased with increasing bonding temperature and time due to increasing their oxides and intermetallic compounds. XRD data indicated that Ag, Ag-Ti intermetallic compounds, TiAg and Ti₃Ag and titanium oxide, TiO₂were formed in interface. In tensile test, it was found that the tensile strength had a maximum value at the bonding temperature of 900℃ and time of 5min, and tensile strength decreased over bonding time of 5min. The critical thickness of intermetallic compounds was observed to about 30㎛, because of brittleness from their excessive intermetallic compounds and titanium oxide, and weakness from void.

• Transactions on Electrical and Electronic Materials
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• 제5권1호
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• pp.34-37
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• 2004

Amorphous chalcogenide thin films, especially a-(Se, S) based films, exhibit a number of photo-induced phenomena. In this study, we make the As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag thin film and then we measure the holographic diffraction efficiency according to thickness of Ag. And we form the two-dimensional holographic grating. At first, we formed one-dimensional grating and then we form two-dimensional grating by rotate the sample. We found out the most suitable thickness of Ag and in case of As$\_$40/Ge$\_$10/Se$\_$15/S$\_$35//Ag(600${\AA}$), the diffraction efficiency was more higher than other samples. The holographic grating was formed by He-Ne laser(λ=632.8nm). The intensity of incident beam was 2.5mW and incident angle was 20$^{\circ}$. We confirm. the two-dimensional holographic grating by the pattern of diffracted beam and AFM(Atomic Force Microscope) image. We perform the etching process using by 0.26N NaOH in order to confirm clearly two-dimensional grating.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.440-440
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• 2012

The optical characteristics of transparent electrode with various kind of materials and thickness to be used for organic photovoltaic cells were studied by simulation methodology. It demonstrated that the transmittance varies with the kinds of materials, the number of layers and change in the thickness of each layer. In the case of the structure composed of dielectric/Ag/dielectric, optimized transmittance was higher than 90% at 550 nm and the thickness of the Ag layer was ~10nm. Top and bottom dielectric materials can be changed with different refractive index and extinction coefficient. The relation between the optical transmittance of device and transparent electrode with different refractive indices was discussed as well. By processing numerical simulations, an optimized optical transmittance can be obtained by tunning the thickness and materials of transparent electrode.

• Korean Chemical Engineering Research
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• 제56권3호
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• pp.410-415
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• 2018

Expanded graphite (EG)/Ag nanoparticle composites were synthesized by the chemical reduction of Ag ions, followed by the addition of expanded graphite into an Ag reducing solution. The prepared composites showed uniform dispersion of Ag nanoparticles on the surface of expanded graphite and exhibited relatively higher thermal conductivities than those of pure expanded graphite. In the case of 10% Ag content in the composite, the thermal conductivity in the thickness direction was 78% higher than the pure expanded graphite. We suggest that EG/Ag nanoparticle composites are a strong candidate for advanced heat spreading material.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.256-258
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• 2003

Two Si wafers are bonded with indium-silver alloy using diffusion bonding method. When silver and indium thin films are contacted, they diffuse into each other and form inter-metallic compounds like $AgIn_2$, $Ag_2In$, $Ag_3In$ etc. These compounds are determined by ratio of two metals. From phase diagram of Ag-In alloy, we can get the ratio of $Ag_2In$, that has high melting point about 700$^{\circ}C$, approximately 2:1. This ratio was made by controlling of film thickness. And bonding was executed by annealing and adding pressures at a time. The joint of these wafers had been observed by SEM. And we had also seen the EDS (Energy Dispersive Spectroscopy) data to analysis the component of samples.

• 분석과학
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• 제7권2호
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• pp.181-186
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• 1994

Poly(3-methylthiophene) 전도성 막전극을 이용해서 벗김 전압-전류법으로 Ag의 분석 가능성을 연구하였다. 막전극 표면에 존재하는 18-crown-6은 수용액에서 Ag(I)을 착화에 의해서 흡수하고 이 Ag(I)은 제한된 전위 범위의 순환 전압-전류법에 의해서 막전극 속으로 이동하여 유리질 탄소전극에서 산화-환원된다. 따라서 막전극은 Ag(I)의 침투를 용이하게 하기 위해서 적당한 두께의 다공성으로 제조되어야 한다. 이러한 실험 결과를 바탕으로 수용액에서 $5.0{\times}10^{-6}M$의 Ag(I)을 검출할 수 있었다.

• 한국분말재료학회지
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• 제4권3호
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• 한국광학회지
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• 제3권4호
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• pp.205-216
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• 1992

공명각과 비공명각에서 각각 표면 플라즈몬의 전기장 분포를 계산하고 두 경우를 비교하였다. 표면 플라즈몬 공명의 응용으로서 (1) 은박막 위에 덧증착한 얇은 ZnS 박막의 광학 상수를 두께가 증가함에 따라 측정하였고, (2) 발산하는 입사파를 이용하여 은박막 위에 덧증착한 두께가 서로 다른 SiO 박막에 의한 4개의 표면 플라즈몬 공명을 한 화면에서 관측하였으며 (3) 평행광을 이용하여 은박막 위에 덧증착한 격자 모양의 SiO박막과 문자 "가" 모양의 SiO 박막의 형상을 측정하였다.

• 한국표면공학회지
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• 제35권1호
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• pp.47-52
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• 2002

Intermetallic compound on the soldered interface plays important role on the bondability and mechanical properties of soldered joint. The formation of intermetallic compounds are influenced by many factors such as temperature, holding time, base metals and so on. On this study the effect of number of reflow times on the intermetallic growth was investigated. For the experimental materials, Sn-3.5Ag-0.7Cu solder ball of 0.3mm diameter and RMA-type flux were used. Thickness of intermetallic compound of solder ball by 2nd reflow showed nearly 60% higher than that of 1st reflow, and shear strength showed 10% higher value. Thickness and shear strength according to the position of interface such as upper side or lower side between two substrates were also investigated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.162-163
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• 2007

In this paper, we fabrication of 2-D photonic crytal using holographic lithography. We used Ag doped chalcogenide AsGeSeS film and He-Ne (632.8nm) (P:P) Polarized laser beam. The thickness of Ag thin film was varied from 60nm and the thickness of chalcogenide thin film was varied from 2um. Frist, holographic lithography with 1-D photonic crystal on Ag/AsGeSeS film. And than revolved the sample $90^{\circ}$ to fabricate 2-D photonic crystal with holographic lithography.