• Title/Summary/Keyword: Thickness Uniformity

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Effect of Clipping Time on Seed Maturity and Germination in Italian Ryegrass (Lolium multiflorum Lam. Italicum) (이탈리안라이그라스 예취시기가 종자 등숙 및 발아에 미치는 영향)

  • 서석기;김영두;박호기;박문수
    • KOREAN JOURNAL OF CROP SCIENCE
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    • v.42 no.1
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    • pp.104-111
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    • 1997
  • Since seeds of Italian ryegrass should be imported every year, it is necessary to investigate the prossible production of seeds in Italian ryegrass field after rice. Seven Italian ryegrass varieties were planted on October 8, 1986 at National Honam Crop Experiment Station at Iksan and clippings were made on April 10 and April 30 in 1987. Headings of K-11 and T.N.T were earlier than those of Tetrone and Bettina. For all varieties tested, heading date was delayed and 1,000 grain weight was decreased linearly as the clipping was made later. Length, width and thickness of a grain were reduced by clipping and later clipping, while tetraploid varieties produced larger grains than diploid varieties. The germination percentage and germination speed at $25^{\circ}C$ were higher than at 15$^{\circ}C$. The final germination percentage was lower at the later clippings and was higher at 15$^{\circ}C$, and earlier varieties showed higher germination percentage. Uniformity of germination was greater at $25^{\circ}C$ and was decreased as the clipping was made later, and the eariler varieties such as K-11 were germinated more uniformly. Average number of days to germination was longer at 15$^{\circ}C$ than at $25^{\circ}C$ and was longer at later clipping. The germination percentage was decreased linearly as the heading was delayed, while it increased linearly as the 1,000 grain weight was increased.

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Fabrication and Characterization of Bi-axial Textured Conductive Perovskite-type Oxide Deposited on Metal Substrates for Coated Conductor. (이축 배향화된 전도성 복합산화물의 금속 기판의 제조와 분석)

  • Sooyeon Han;Jongin Hong;Youngah Jeon;Huyong Tian;Kim, Yangsoo;Kwangsoo No
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.235-235
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    • 2003
  • The development of a buffer layer is an important issue for the second -generation wire, YBCO coated metal wire. The buffer layer demands not only on the prohibition of the reaction between YBCO and metal substrate, but also the proper lattice match and conductivity for high critical current density (Jc) of YBCO superconductor, In order to satisfy these demands, we suggested CaRuO3 as a useful candidate having that the lattice mismatches with Ni (200) and with YBCO are 8.2% and 8.0%, respectively. The CaRuO3 thin films were deposited on Ni substrates using various methods, such as e-beam evaporation and DC and RF magnetron sputtering. These films were investigated using SEM, XRD, pole-figure and AES. In e-beam evaporation, the deposition temperature of CaRuO3 was the most important since both hi-axial texturing and NiO formation between Ni and CaRuO3 depended on it. Also, the oxygen flow rate had i[n effect on the growth of CaRuO3 on Ni substrates. The optimal conditions of crystal growth and film uniformity were 400$^{\circ}C$, 50 ㎃ and 7 ㎸ when oxygen flow rate was 70∼100sccm In RF magnetron sputtering, CaRuO3 was deposited on Ni substrates with various conditions and annealing temperatures. As a result, the conductivity of CaRuO3 thin films was dependent on CaRuO3 layer thickness and fabrication temperature. We suggested the multi-step deposition, such as two-step deposition with different temperature, to prohibit the NiO formation and to control the hi-axial texture.

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Development of MRI Phantom for Assessing MR Image Quality (자기공명영상 화질 평가용 팬텀 개발에 관한 연구)

  • Ahn, Chang-Beom;Na, Dong-Gyu;Kim, Kwang-Gi;Kim, Dong-Sung;Kim, In-Su;Lee, Jung-Whee;Hong, Suk-Joo;Byun, Jae-Ho;Khang, Hyun-Soo;Jang, Gi-Won;Song, In-Chan
    • Investigative Magnetic Resonance Imaging
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    • v.10 no.2
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    • pp.89-97
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    • 2006
  • Purpose : To evaluate MR image qualities we developed a new MRI phantom with the fixation structures necessary to position it into coil firmly. Materials and methods : We designed MRI phantom for eight evaluation items such as slice thickness accuracy, high contrast spatial resolution, low contrast object detectability, geometry accuracy, slice position accuracy, image intensity uniformity, percent signal ghosting and signal to noise ratio. For the positioning of phantom at coils, the fixation structures were set up on the surface of phantom. Six different MRI units were used for test the possibility for the clinical application and their image qualities were evaluated. Results : We acquired appropriate MR image qualities enough for the evaluation on all used MR units and confirmed that their evaluations were within reliable values compared to real ones for some items. The positioning of our phantom into head coils with fixation structures worked well for proper imaging. Conclusion : We found that our prototype of MRI phantom had the possibility of clinical application for MR image quality assessment.

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Fabrication of SmBCO superconducting coated conductor using 100m class batch-type co-evaporation method (100m 급 batch-type co-evaporation 증착장치를 이용한 SmBCO 초전도테이프 제조)

  • Kim, H.S.;Oh, S.S.;Ha, H.S.;Yang, J.S.;Kim, T.H.;Lee, N.J.;Jeong, Y.H.;Ko, R.K.;Song, K.J.;Ha, D.W.;Youm, D.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.24-25
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    • 2006
  • SmBCO coated conductors were successfully fabricated using EDDC (Evaporation using Drum in Dual Chambers) deposition system that is a bath type co-evaporation system for fabrication of superconducting tape and divided into two chambers named evaporation chamber and reaction chamber. To obtain long and high quality superconducting coated conductor, it is very important to secure the uniformity of all the deposition parameters m the deposition system such as deposition temperature, oxygen partial pressure, compositional ratios and so on. Therefore, we investigated the distribution of the parameters along the axis of the drum m EDDC on which tapes were wound helically. When the temperature on the middle point of deposition zone was $700^{\circ}C$, that on the edge of deposition zone was $675^{\circ}C$. When the thickness of SmBCO layer on the middle point of deposition zone was 1063 nm, that on the edge of deposition zone was 899 nm. The partial pressure of oxygen was 5 mTorr in the reaction chamber while that was $7{\times}10^{-5}$Torr in the evaporation chamber. The composition ratio of Sm:Ba:Cu, that was measured by EDX, was very uniform along the axis of the drum. Under these deposition conditions, critical current distribution along the drum axis was 175 A/cm, 190A/cm, 217.5 A/cm, 182.5 A/cm, 175 A/cm with the interval of 9 cm between samples. It means that the EDDC system has the potential of fabricating (100m, 200A) class coated conductor.

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A study on the Compressive Strength of the Improved Skin-timber (개량 스킨팀버의 압축 강도에 관한 연구)

  • Kim, Gwang-Chul
    • Journal of the Korean Wood Science and Technology
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    • v.38 no.4
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    • pp.282-291
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    • 2010
  • As compared with existing center-boring timber, skin timber which be hollowed out of its considerable inner parts has some merits as like short drying time, less developed checks during drying, a advantage of lower MC (8~%), more easy injection of chemicals, a possibility of using as a lighter structural heavy timber including Hanok and heavy timber construction, a possibility for the various living necessaries and furniture materials. However, development of hybrid skin timber is required for using as a value-added materials and giving a confidence for the structural safety of skin timber to general user. Thus, improved pine skin timber (IPST) and improved larch skin timber (ILST) were manufactured using the lighter steel plate possible. And compressive capacity of improved skin timber was analyzed. From the results of this study, the following conclusions have been made: 1. Both of IPST and ILST can give a uniformity of material capacity compared with non-treated skin timber. 2. Both IPST and ILST, there was not statistical significancy among the thickness of steel plate. Therefore, it concluded that it was not necessary to use thicker steel plate. 3. There was also not statistical significancy between IPSR and ILST, so it need not to be selective about the species of improved skin timber. 4. IPST showed various failure types, but most failure types of ILST is a splitting type.

저온 공정 온도에서 $Al_2O_3$ 게이트 절연물질을 사용한 InGaZnO thin film transistors

  • 우창호;안철현;김영이;조형균
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2010.06a
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    • pp.11-11
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    • 2010
  • Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

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Present Situation of Zoysiagrass (Zoysia spp.) Culture, Sod Production, and Bland by Prefecture in Japan (일본의 한국잔디의 재배, 생산 및 현별 브랜드화 현황)

  • Jang, Deok-Hwan;Park, Nam-Il;Yang, Seung-Won;Sim, Gyu-Yul
    • Asian Journal of Turfgrass Science
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    • v.25 no.2
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    • pp.229-236
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    • 2011
  • This study was carried out to provide recent information on zoysiagrass (Zoysia spp.) sod production in Japan. Total zoysiagrass sod production acreage in Japan was 6,623 ha. The acreage by prefecture was 3,900 ha (58.9%) in Ibalaki, 779 ha (11.8%) in Tostoli, 609 ha (9.2%) in Kagosima, and 550 ha (8.3%) in Sijeumoka, respectively. Sod was harvested by 1.5 cm sod thickness. Mowing height of Goraisiba (Zoysia matrella) and Nosiba (Zoysia japonica) cultivars was cut by 10 mm and 25 mm height, respectively. Japan agricultural cooperative issued a warranty of sod production quality to zoysiagrass consumers. A quality evaluation for sod production was carried out continuously to maintain a reasonable degree of uniformity and hight quality of sod production three times a year. Also, zosiagrass sod production was rotated with Chinese cabbage (Brassica rapa var. glabra Regel) for improving fertility of soil every five to six years. Patented cultivars for promoting bland in Ibaraki prefecture of Japan were 'Tsukuba himae', 'Tsukuba kagayaki', 'Tsukuba Talou' and 'Tsukuba green'.

Tunnel Magnetoresistance with Top Layer Plasma Oxidation Time in Doubly Oxidized Barrier Process (이중 절연층 공정에서 상부절연층의 산화시간에 따른 터널자기저항 특성연구)

  • Lee, Ki-Yung;Song, Oh-Sung
    • Journal of the Korean Magnetics Society
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    • v.12 no.3
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    • pp.99-102
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    • 2002
  • We fabricated TMR devices which have doubly oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it with oxidation time of 10 sec. Subsequent sputtering of 13 $\AA$-Al was performed and the metallic layer was oxidized for 50, 80, and 120 sec., respectively. The electrical resistance changed from 500 Ω to 2000 Ω with increase of oxidation time, while variation of MR ratio was little spreading 27∼31 % which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3∼1.8 eV sufficient for tunnel barrier, and the barrier width (<15.0 $\AA$) was smaller than physical thickness. Our results may be caused by insufficient oxidation of Al precursor into A1$_2$O$_3$. However, doubly oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. Our results imply that we were able to improve MR ratio and tune resistance by employing doubly oxidized tunnel barrier process.

Thermoluminescent Response of Thin LiF:Mg,Cu,Na,Si Detectors to Beta Radiation (얇은 LiF:Mg,Cu,Na,Si 검출기의 베타선장에 대한 TL 반응)

  • Nam, Y.M.;Kim, J.L.;Chang, S.Y.;Cho, H.W.;Kim, H.J.
    • Journal of Radiation Protection and Research
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    • v.24 no.1
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    • pp.39-43
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    • 1999
  • Thermoluminescent (TL) response characteristics of a thin LiF:Mg,Cu,Na,Si Teflon detectors have been studied for use in beta radiation detection. The detectors were fabricated from a mixture of LiF:Mg,Cu,Na,Si phosphor and Teflon powder which was molded into a thin disk form of $50mg/cm^2$ thickness. These detectors were irradiated to beta fields of $^{147}Pm,\;^{204}Tl\;and\;^{90}Sr/^{90}Y$ sources with a covering of Kapton foil ($2mg/cm^2$) and photon irradiation was carried out with a $^{137}Cs$ source at the Korea Atomic Energy Research Institute (KAERI). Batch uniformity was estimated to be 4.7% and the beta dose response presented linear relationship from 0.1 mGy to 100 Gy. The beta energy responses of thin detectors normalized to $^{137}Cs$ were presented as 0.46, 1.09 and 1.06 for $^{147}Pm,\;^{204}Tl\;and\;^{90}Sr/^{90}Y$ beta rays, respectively. The evaluated values for angular responses were $0.93{\pm}0.03\;(^{147}Pm),\;0.94{\pm}0.04\;(^{204}Tl),\;and\;0.92{\pm}0.05\;(^{90}Sr/^{90}Y)$. The results satisfied well a proposed ISO Standard for beta ray dosimeters.

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Fabrication of Single-Crystal Silicon Microstructure by Anodic Reaction in HF Solution (HF 양극반응을 이용한 단결정 실리콘 미세구조의 제조)

  • Cho, Chan-Seob;Sim, Jun-Hwan;Lee, Seok-Soo;Lee, Jong-Hyun
    • Journal of Sensor Science and Technology
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    • v.1 no.2
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    • pp.183-194
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    • 1992
  • Some silicon micromechanical structures useful in sensors and actuators have been fabricated by electropolishing or porous silicon formation technique by anodic reaction in HF solution. The microstructures were lightly doped single crystal silicon and the formation was isotropic independent of crystal directions. Porous silicon layer(PSL) was formed selectively in $n^{+}$ region of $n^{+}/n$ silicon structure by anodic reaction in concentrated HF(20-48%) solution. Characteristics of the formed PSL were investigated along with change of the reaction voltage, HF concentration and the reaction time. PSL was formed only in $n^{+}$ region. The porosity of the PSL was decreased with the increase of HF concentration and independent of reaction voltage. For the case of $n/n^{+}/n$ structures, the etched surface of silicon was fairly smooth and a cusp was not found. The thickness of the microstructures was the same as that of the epitaxial n-Si layer and good uniformity. We have fabricated acceleration sensors by anodic reaction in HF solution(5 wt%) and planar technology. The process was compatible with conventional It fabrication technique. Various micromechanical structures, such as rotors of motor, gears and linear actuator, were also fabricated by the technique and examined by SEM photographs.

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