• Korean Journal of Materials Research
• /
• v.12 no.12
• /
• pp.930-934
• /
• 2002

Nanosized $WO_3$ powders were synthesized by the sol-precipitation process using $WCl_{6}$ as the starting material, ethanol as a solvent and $NH_4$OH solution as a precipitant, followed by a washing-drying treatment and calcination. The effects on the powder crystallinity and microstructure of calcination temperature were investigated with XRD and FE-SEM. The $WO_3$ powders calcined at $500^{\circ}C$ and $700^{\circ}C$ showed good crystallinity and their mean particle size was 30nm and 70nm, respectively. These powders were used for the preparation of pastes which were printed as thick films on alumina substrates with comb-type Pt electrodes. The particle size strongly influenced the $NO_2$ gas sensing property of the thick films. A significant reduction in the $NO_2$ sensitivity was observed for the film prepared from larger particle size, having thus a larger grain size. For the film having a smaller grain size, on the other hand, the higher $NO_2$ sensitivity was observed and the sensitivity increased with $NO_2$ concentration.

• Journal of the Microelectronics and Packaging Society
• /
• v.22 no.4
• /
• pp.83-89
• /
• 2015

In this paper, we propose a fabrication technique for enhanced electrical properties of piezoelectric thick films with excellent patterning property using sol-infiltration and a direct-patterning process. To achieve the needs of high-density and direct-patterning at a low sintering temperature (< $850^{\circ}C$), a photosensitive lead zirconate titanate (PZT) solution was infiltrated into a screen-printed thick film. The direct-patterned PZT films were clearly formed on a locally screen-printed thick film, using a photomask and UV light. Because UV light is scattered in the screen-printed thick film of a porous powder-based structure, there are needs to optimize the photosensitive PZT sol infiltration process for obtaining the enhanced properties of PZT thick film. By optimizing the concentration of the photosensitive PZT sol, UV irradiation time, and solvent developing time, the hybrid films prepared with 0.35 M of PZT sol, 4 min of UV irradiation and 15 sec solvent developing time, showed a very dense with a large grain size at a low sintering temperature of $800^{\circ}C$. It also illustrated enhanced electrical properties (remnant polarization, $P_r$, and coercive field, $E_c$). The $P_r$ value was over four times higher than those of the screen-printed films. These films integrated on silicon wafer substrate could give a potential of applications in micro-sensors and -actuators.

• Applied Chemistry for Engineering
• /
• v.20 no.6
• /
• pp.622-627
• /
• 2009

Using an alkali-solution developable photosensitive resin and a carbon black as a conductive filler, photo-patternable pastes for polymer thick film resistor were fabricated and evaluated. A photo solder resist (PSR), which is usually used as protecting layer of printed circuit board (PCB), was used as a photosensitive resin so that ultraviolet exposure and alkali-aqueous solution development of paste were possible. After fabricating the photosensitive polymer resistor paste, the electrical properties of thick film resistors were measured using PCB test boards. Sheet resistance was decreased with increasing amount of carbon black, but the developability was limited in excess loading of carbon black. The sheet resistance was also reduced by re-curing and the change rate was smaller in higher carbon black loading. Moreover, finely patterned meander-type thick film resistors were fabricated using photo-process and large resistance up to several tens of sheet resistance could be obtained in small area by this technique.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.29A no.3
• /
• pp.79-86
• /
• 1992

The cause of excess current noise which appears some times in RuO$_2$ thick film chip resistors and the process to reduce such noise are investigated. We observed that too large thermal expansion coefficients of resistor paste and electrode metal paste can induce the mechanical stress and microcracks in the contact region of the two sintered materials. Such microcracks result in the reduction of conduction paths in the sintered electrode and this provokes the increase of the resistance value and the current noise. Such excessive current noise induced by microcracks could be reduced or even eliminated by using an enlarged overcoat patterns in the plating process or by adding an additional annealing process before plating.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.289.1-289.1
• /
• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• Electrical & Electronic Materials
• /
• v.9 no.1
• /
• pp.59-66
• /
• 1996

Polyimides containing cyclobutane ring in main chain is known to be thermally stable and able to be developed in organic solvents after photolysis with 254 nm UV light. This type of polyimides can be used as promising positive photoresist in VLSI fabrication process. In the current VLSI process, photoresist films are formed by spin coating. The film thickness is more than several hundred nano meters. It seems that there is room for improvement of film coating process by introducing Langmuir Blodgett technique. Thereby ultra thin film photoresist can be formed, and higher density of integration in VLSI be achieved. In the present work, depositing procedure of LB films of this polyimide was investigated. LB film thickness was measured by ellipsometry to evaluate deposited film status. Chemical imidization procedure was studied to avoid several problems in thermal imidization. The pattern of submicron dimension has successfully formed on LB film of 8nm thick, which found showing good contrast.

• Progress in Superconductivity and Cryogenics
• /
• v.6 no.3
• /
• pp.21-26
• /
• 2004

Deposition condition of YBa$_2$Cu$_3$$O_{7-x}$ (YBCO) films on moving IBAD templates (CeO$_2$/IBAD-YSZ/SS) was studied in a hot-wall type metal organic chemical vapor deposition (MOCVD) process using single liquid source. The reel velocity was 40 cm/hr and the source mole ratios of Y(tmhd)$_3$:Ba(tmhd)$_2$:Cu(tmhd)$_2$ were 1:2.3:3.1 and 1:2.1:2,9, Two different types of IBAD templates with thin CeO$_2$ and thick CeO$_2$ layers were used, The YBCO films were successfully deposited at the deposition temperatures of 780~89$0^{\circ}C$ ; the a-axis growth was observed together with the c-axis growth up to 83$0^{\circ}C$. while the c-axis growth became dominant above 83$0^{\circ}C$. The top surface of the c-axis film was fairly dense and included a small amount of the a-axis growth, although the peaks of the a-axis grains were not observed in XRD pattern, The YBCO film deposited on IBAD template with thin CeO$_2$ layer showed low critical current of 2.5 A/cm-width. while the YBCO film deposited on IBAD template with thick CeO$_2$ layer showed higher critical current of 50 A/cm-width. This result indicates that thick CeO$_2$ layer is thermally more stable than thin CeO$_2$ layer at the high deposition temperature of the MOCVD process.s.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.4
• /
• pp.185-187
• /
• 2012

Ga doped ZnO (GZO)/copper (Cu) bi-layered film was deposited on glass substrate by RF and DC magnetron sputtering and then the effect of the Cu bottom layer on the optical, electrical and structural properties of GZO films were considered. As-deposited 100 nm thick GZO films had an optical transmittance of 82% in the visible wavelength region and a sheet resistance of 4139 ${\Omega}/{\Box}$, while the GZO/Cu film had optical and electrical properties that were influenced by the Cu bottom layer. GZO films with 5 nm thick Cu film show the lower sheet resistance of 268 ${\Omega}/{\Box}$ and an optical transmittance of 65% due to increased optical absorption by the Cu metallic bottom layer. Based on the figure of merit, it can be concluded that the thin Cu bottom layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Korean Journal of Materials Research
• /
• v.24 no.9
• /
• pp.443-450
• /
• 2014

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide which can enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was then prepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a $NiCl_2$ environment. After removing surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemical vapor deposition at $200^{\circ}C$. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing (RTA) process at $730^{\circ}C$ for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as the crystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer was epitaxially crystallized with the help of $NiSi_2$ precipitates that originated from the poly-Si seed layer. The crystallinity of the SERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process. The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to $1{\times}10^{18}cm^{-3}$. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by the SERTA process were $85cm^2/V{\cdot}s$ and 1.23 V/decade at $V_{ds}=-3V$, respectively. The off current was little increased under reverse bias from $1.0{\times}10^{-11}$ A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakage current can be fabricated with more precise experiments.

• Journal of Sensor Science and Technology
• /
• v.17 no.6
• /
• pp.418-424
• /
• 2008

The PZT based piezoelectric thick films prepared by screen printing method have been mainly used as a functional material for MEMS applications due to their compatibility of MEMS process. However the screen printed thick films generally reveal poor electrical and mechanical properties because of their porous microstructure. To improve microstructure we mixed attrition milled powder with ball milled powder of 0.01Pb$(Mg_{1/2}W_{1/2})O_3$-0.41Pb$(Ni_{1/3}Nb_{2/3})O_3$-$0.35PbTiO_3$-$0.23PbZrO_3$+0.1 wt% ${Y_2}{O_3}$+1.5 wt% ZnO composition. By mixing 25 % of attrition milled powder and 75 % of ball milled powder, the broadest particle size distribution was obtained, leading to a dense thick film with crack-free microstructure and improved dielectric properties. The X-ray diffraction analysis revealed that the film was in wellcrystallized perovskite phase. The remanent polarization was increased from $13.7{\mu}C/cm^2$ to $23.3{\mu}C/cm^2$ at the addition of 25 % attrition milled powder.