• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.05a
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• pp.113-116
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• 2005

In this paper, a computational and experimental analysis about the flow behavior of thin polymer film in the spin coating process for stable cover layer coating of a blu-ray disc is described. The blu-ray disc, a next-generation optical disc format over 25GB, consists of a 1.1mm thick substrate and a 0.1mm tick cover layer. Generally, cover layer on the blu-ray disc is made by the polymer spin coating process. However, it is hard to secure sufficient coating uniformity around the rim on the cover layer. In order to get the uniform thickness deviation and to minimize the bead around the rim, the edge of the disc substrate can be modified into various shapes around the rim on the disc and analyzed with various parameters, such as surface tension, viscosity, and rotation speed, etc. The optimal shape of the rim was tried to get by 3 dimensional computer simulation of the polymer expulsion process.

• Journal of the Korean Ceramic Society
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• v.42 no.12 s.283
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• pp.865-871
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• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

• Composites Research
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• v.31 no.1
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• pp.23-29
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• 2018

The RFI process can be applied to very thick structures without limiting the resin viscosity. When the proper thickness of the resin film cannot be set, the resin film creates either the non-impregnated section or the excessive resin contents and this leads to the deterioration of mechanical properties. Therefore, this study proposed a method for setting the resin film thickness in the RFI process. The fiber compaction behavior test was proposed by setting the proper resin film thickness and the properties of composites were evaluated through short beam shear strength test, compression test and porosity measurement to verify the proposed method. The evaluation of physical properties of composites was conducted and an appropriate level of resin film thickness was found based on the results of fiber compaction behavior test.

• Progress in Superconductivity
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• v.5 no.2
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• pp.132-135
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• 2004

We fabricated YBCO thick films by using a screen printing method with $Y_2$BaCuO$_{5}$(Y211) and BaCO$_3$ powders on Cu-substrate in $N_2$ atmosphere. Cu-sheathed YBCO thick film process is more simple and economic than YBCO coated conductor methods. The heat treatment is performed in the range of 860 - 875 $^{\circ}C$ for 5 min in the tube furnace of $N_2$ atmosphere. The flow rate of $N_2$ gas is fixed 60 $m\ell$/min. Microstructure and phases of thick films were investigated by optical microscope, X-ray diffraction(XRD) and SEM. At heat-treatment temperature, the thick films were partially melted by liquid reaction between CuO of oxidized copper substrate and the powders screen-printed on Cu-sheath. During the heat-treatment procedure, YBCO superconducting grains nucleate.e.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.2008-2010
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• 2002

Process conditions of a novel negative thick photoresist, JSR THB-$430N^{(R)}$, are established in this paper. Although SU-8 obtains uniform and high-aspect-ratio structures, it is hard to remove the SU-8 mold after electroplating. The JSR THB-$430N^{(R)}$ can be more easily removed than the SU-8 and has a low internal stress. Introducing two step strip processes using acetone and the jSR THB-$S1^{(R)}$, the JSR THB-$430N^{(R)}$ electroplating mold was removed completely and a JSR THB-$430N^{(R)}$ film stress is compressive less than 2 MPa. In this paper, we obatined $200{\mu}m$ thick PR structure and $100{\mu}m$ thick electroplated nickel structure using the JSR THB-$430N^{(R)}$ photoresist.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05b
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• pp.57-59
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• 2005

Ploycrystalline $Pb(Zr_{0.5},Ti_{0.5})O_3$ and $BaTiO_3$ powder were prepared by sol-gel process. The alumina substrate were sintered at $1400^{\circ}C$ with bottom electrode of Pt for 2 hours. The Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films with laminating times were fabricated on alumina substrate by screening printing method. The obtained thick films were sintered at $800^{\circ}C$ with upper electrode of Ag paste for 1 hour. Structural properties of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films were investigated. As a result of the Differential Thermal Analysis(DTA) of Pb(Zr0.5,Ti0.5)O3, exothermic peak was observed at around $650^{\circ}C$. The X-ray diffraction (XRD) patterns indicated that BaTi03 and Pb(Zr0.5,Ti0.5)O3 phases and porosities were formed in the interface of Pb(Zr0.5,Ti0.5)O3 / BaTiO3 multilayered thick films.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.597-600
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• 2006

The silver gate and source/drain electrodes for an a-Si thin film transistor were fabricated by the selective electroless plating (SELP) process. Relevant physical properties including taper angle, uniformity and resistivity are investigated. The Ag layer was about 150nm to 250nm thick, the resistivity less than $3{\times}10^{-6}$ Ohm-cm and the taper angle 45'-60' and the nonuniformity less than 10% on G2 substrates. The transfer characteristics with the Ag gate, and source/drain electrodes respectively possessed good field effect mobility similar to conventionally fabricated a-Si TFTs. This process provided low resistivity, low cost and ease of processing.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2001.07a
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• pp.151-156
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• 2001

Using the photoimageable thick film conductors, $25\mu\textrm{m}$ line widths and $25\mu\textrm{m}$ spaces can be obtained. Test patterns are made by green tape lamination, paste printing, exposing to UV light, developing in an aqueous process and cofiring. Postfiring method using alumina substrate can be also applied to fine line formation. Series gap resonator formed by photopatterning process showed the improved signal transmission characteristics compared to that obtained by conventional screen printing.

• Proceedings of the Korean Society of Marine Engineers Conference
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• 2006.06a
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• pp.265-266
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• 2006

The chemical conversion coating formed on magnesium alloy investigated for low cost and harmless in environment by using the colloidal silica as the main component. The film formed in 298 K is thick, the film, which was thought combination of Si-O, was formed. The film formed in 313 K is thinner than that in 298 K. The quantity of film formed at high temperature such as 333 K and 353 K is smaller than dissolved quantity. At the anodic polarization experiment, corrosion resistance in sealing by hot water after chemical conversion treatment in basic solution condition get worse than that in comparison with basic solution condition. In salt spray test, the ratio of black rust on specimen that did not conducted chemical conversion treatment was five times or more compared with those of chemical conversion treated specimen. The film thickness of chemical conversion coating produced by alkali treatment process is thinner than in comparison with that of specimen produced in basic chemical conversion treatment solution condition. It is thought, however, that it showed good corrosion resistance during salt spray test because the area of microcracks is small.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.185-190
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• 2003

In this paper, it was demonstrated that the organic thin film transistors were fabricated by the organic gate insulators with vapor deposition polymerization (VDP) processing. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and 2,2-bis(3,4-dicarboxyphenyl)hexafluoropropane dianhydride (6FDA) and ODA, and cured at $150^{\circ}C$ for 1hr. Electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure obtained to the saturated slop in the saturation region and the subthreshold non-linearity in the triode region. Field effect mobility, threshold voltage, and on-off current ratio in $0.45\;{\mu}m$ thick gate dielectric layer were about $0.17\;cm^2/Vs$, -7 V, and $10^6\;A/A$, respectively. Details on the explanation of compared to organic thin-film transistors (OTFTS) electrical characteristics of ODPA-ODA and 6FDA-ODA as gate insulators by fabricated thermal co-deposition method.