• 전기학회논문지
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• 제58권12호
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• pp.2420-2424
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• 2009

We have successfully demonstrated of metal-insulator-semiconductor (MIS) capacitors with $Al_2O_3/p-Si$ structures. The $Al_2O_3$ film was grown at $200^{\circ}C$ on H-terminated Si wafer by atomic layer deposition (ALD) system. Trimethylaluminum [$Al(CH_3)_3$, TMA] and $H_2O$ were used as the aluminum and oxygen sources. A cycle of the deposition process consisted of 0.1 s of TMA pulse, 10 s of $N_2$ purge, 0.1 s of $H_2O$ pulse, and 60 s of $N_2$ purge. The 5 nm thick $Al_2O_3$ layer prepared on Si substrate by ALD exhibited excellent electrical properties, including low leakage currents, no mobile charges, and a good interface with Si.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.19-20
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• 2007

At first the $Ba_{0.5}Sr_{0.5}TiO_3$-MgO powder with $B_2O_3-Li_2CO_3$ were made by the Sol-Gel method. The thick films of BST-MgO with $B_2O_3-Li_2CO_3$ were fabricated on the $Al_2O_3$ substrates coated with Pt by the screen printing method. The structural and dielectric properties of the BST-MgO thick film with $B_2O_3-Li_2CO_3$, addition were investigated. The structure of the BST-MgO with $B_2O_3-Li_2CO_3$ thick films were dense and homogeneous with no pores. The dielectric constant was increased and dielectric loss was decreased with increasing the sintering temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.192-192
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• 2009

We have successfully demonstrated the inkjet printing process to fabricate $Al_2O_3$ thick films without a high temperature sintering process. A single solvent system had a coffee ring pattern after printing of $Al_2O_3$ dot, line and area. In order to fabricate the smooth surface of $Al_2O_3$ thick film, we have introduced a co-solvent system which has nano-sized $Al_2O_3$ powders in the mixture of Ethylene glycol monomethyl ester and Di propylene glycol methyl ether. This co-solvent system approached a uniform and dense deposition of $Al_2O_3$ powders on the substrate. The packing density of inkjet-printed $Al_2O_3$ films is more than 70% which is very high compared to the value obtained from the films synthesized by other conventional methods such as casting processes. The characterization of the inkjet-printed $Al_2O_3$ films has been implemented to investigate its thickness and roughness. Also the dielectric loss of the films has been measured to understand the feasibility of its application to 3D integration package substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.171-171
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• 2009

We have investigated the impact of coffee ring effect on the inkjet-printed $Al_2O_3$ thick films. In a single solvent system such as Dimethylformamide, the coffee-ring-pattern has appeared on the edge of sessile drop after evaporation. The peak-to-valley height difference in $Al_2O_3$ coffee ring is over 2um. This non-uniform deposition of $Al_2O_3$ over the surface leads to sever surface roughness of the inkjet-printed films. However, we have manipulated our printing parameters to improve the surface roughness and the packing density of the printed $Al_2O_3$ films. Our inkjet-printed $Al_2O_3$ films show 10 times smoother surface than the initially printed sample's surface. Also the packing density of the printed Ah03 film becomes 70% of high packed $Al_2O_3$. In this presentation, we would like to present the key process parameters of the inkjet printing process to overcome the genetic coffee ring problem.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.359-361
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• 2003

Nano-porous alumina was investigated as a protecting layer in an AC Plasma Display Panel. A 2 ${\mu}m$ thick nano-porous $Al_2O_3$ layer inserted with MgO was formed on the dielectric layer instead of the conventional 500 nm-thick MgO thin film. Both nano-porous $Al_2O_3$layer and inserted MgO were prepared by wet process. The luminance and luminous efficiency of 3-inch test panel adopting nano-porous $Al_2O_3$ was higher than that of the conventional PDP.

• 한국자기학회지
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• 제16권6호
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• pp.283-286
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• 2006

고밀도 자기기록용 Ba-페라이트/$SiO_{2}$ 자성박막에서 계면확산 장벽으로써 ${\alpha}-Al_{2}O_{3}$ 버퍼층의 역할을 연구하였다. 열처리동안 $1900{\AA}$의 두께를 가진 비정질 Ba-페라이트/$SiO_{2}$ 박막에서 계면확산은 약 $700^{\circ}C$에서 일어나기 시작하였다. 열처리온도를 $800^{\circ}C$까지 증가시켰을 때, 계면확산은 자기특성을 저하시킬 정도로 급격히 진행되었다. 고온에서의 계면확산을 억제하기 위하여, $110{\AA}$ 두께의 ${\alpha}-Al_{2}O_{3}$ 버퍼층을 Ba-페라이트/$SiO_{2}$ 박막의 계면에 증착하여 사용하였다. Ba-페라이트/${\alpha}-Al_{2}O_{3}/SiO_{2}$ 박막에서는 $800^{\circ}C$의 고온까지 열처리하여도 계면확산이 심각하게 일어나지는 않았다. ${\alpha}-Al_{2}O_{3}$ 버퍼층에 의하여 계면확산이 억제되기 때문에 Ba-페라이트 자성박막의 포화자속밀도와 보자력이 향상되었다. 따라서 Ba-페라이트/$SiO_{2}$ 박막의 계면에서 ${\alpha}-Al_{2}O_{3}$ 버퍼층은 $SiO_{2}$ 기판 성분의 계면확산 장벽으로 사용될 수 있다.

• 센서학회지
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• 제8권5호
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• pp.421-426
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• 1999

본 논문에서는 반절연성 GaAs(semi-insulating GaAs) 기판위에 $Al_2O_3$ 절연막이 게이트 절연막으로 이용된 공핍형모드 p-채널 GaAs MOSFET (depletion mode p-channel GaAs MOSFET)를 제조하였다. 반절연성 GaAs 기판위에 $1\;{\mu}m$의 GaAs 버퍼층(buffer layer), $4000\;{\AA}$의 p형 GaAs 에피층(epi-layer), $500\;{\AA}$의 AlAs층, 그리고 $50\;{\AA}$의 캡층(cap layer)을 차례로 성장시키고 습식열산화시켰으며, 이를 통하여 AlAs층은 완전히 $Al_2O_3$층으로 산화되었다. 제조된 MOSFET의 I-V, $g_m$, breakdown특성 측정을 통하여 AlAs/GaAs epilayer/S I GaAs 구조의 습식열산화는 공핍형 모드 p-채널 GaAs MOSFET를 구현하기에 적합함을 알 수 있다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.139-142
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• 2002

Characteristics of piezoelectric thick films prepared by screen printing were investigated. The piezoelectric thick films were fabricated using Pb(Al,Nb)O$_3$-Pb(Zr,Ti)O$_3$ system on Si-substrate. The fabricated thick films were burned out at 400$^{\circ}C$ and sintered at 850∼1000$^{\circ}C$ using rapid thermal annealing(RTA) precess. The thickness of piezoelectric thick films were 10$\mu\textrm{m}$. PAN-PZT thick film on Ag-Pd/SiO$_2$/Si prepared at 900$^{\circ}C$/1300sec had remanent polarization of 19.70 ${\mu}$C/$\textrm{cm}^2$.

• 동굴
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• 제75호
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• pp.49-54
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• 2006

Electrophoretic Deposition (EPD) is the most convenient technology to deposit natural or oxide powders of nonconductive materials in alcoholic suspension solution with adding electrolyte of iodine to form ceramic thick film on metal substrate under applied electric field with double electric layer between electrode and metal substrate. In this research work, the important parameters and technical ways were studied to form EPD thick films of typical oxide ceramics of Al2O3, YBCO and tourmaline powders.