• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.371-376
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• 1997

A 100*100.mu.m$^{2}$ aluminum micro mirror is designed and fabricated using a thick photoresist as a sacrificial layer andas a mold for nickel electroplating. The micro mirror is composed of aluminum mirror plate, two nickel support posts, two aluminum hinges, two address eletrodes, and two landing electrodes. The aluminum mirror plate,which is supported by two nickel support posts, is overhung about 10.mu.m from the silicon substrate. THe aluminum mirror plate is actuated like a seesaw by electrostatic force generated by electic potential difference applied between the mirror plate and the address electrode. This paper presents some methods to measure the optical and the dynamic characteristics of the fabricated micro mirror.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.508-515
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• 2005

We propose a fabrication method for refractive lens by variable velocity moving mask lithography and slit pattern. Distribution of exposure dose should be controlled for the curved photoresist surface that works as a refractive surface. We analyze theoretically the distribution of exposure dose by change of moving velocity, moving direction of mask and the shape of mask pattern, and confirm for the curved surface experimentally. The lens could have sag height of a few of hundreds ${\mu}m$, by using thick photoresist or Deep RIE process.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Korean Journal of Optics and Photonics
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• v.13 no.2
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• pp.117-122
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• 2002

Some 10$\times$10 micro-lens arrays of a period of 300 ${\mu}{\textrm}{m}$, a thickness of 17 ${\mu}{\textrm}{m}$, and a focal length of 2.2 mm are fabricated by exposing a thick layer of photoresist through a grayscale mask via UV proximity printing. The grayscale mask is fabricated in a holographic film by reducing (6.6X) a high-resolution black-and-white film where a grayscale patters of a micro-lens array designed by a computer has been written using a film recorder. The proposed method has the advantage of a low fabrication cost, a fill-factor of almost 100% and the ease of realizing an aspheric lens.

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.5
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• pp.182-188
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• 2003

We have demonstrated a fluidic technique for self-assembly of microfabricated parts onto substrate using patterned shapes of magnetic force self-assembled monolayers (SAMs). The metal particles and the array were fabricated using the micromachining technique. The metal particles were in a multilayer structure (Au, Ti, and Ni). Sidewalls of patterned Ni dots on the array were covered by thick negative photoresist (SU-8), and the array was magnetized. The array and the particles were mixed in buffer solution, and were arranged by magnetic force interaction. Binding direction of the metal particle onto Ni dots was controlled by multilayer structure and direction of magnetization. A quarter of total Ni dots were covered by the particles. The binding direction of the particles was controllable, and condition of particles was almost even with the Au surface on top. The particles were successfully arranged on the array.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.8-8
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a $1.1{\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of $\theta=6^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry and the diffraction patterns using a 632.8-nm HeNe laser were observed for n-rotation symmetry corresponding n-fold PQCs. The fabricated PQC template patterns were examined using scanning electron microscopy(SEM). Transmission spectra were measured fourier transform infrared(FTIR) spectrometer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.829-834
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• 2008

Two-dimensional photonic quasicrystal (PQCs) template patterns have been fabricated on a 1.1 ${\mu}m$-thick DMI-150 photoresist using a multiple-exposure holographic method. A 442-nm HeCd laser was utilized as a light source and the holographic exposure was carried out at a fixed angle of ${\theta}$ = 6$^{\circ}$. After the first holographic exposure, the sample was rotated to a proper angle and the second exposure was performed to the same manner. This exposure process was repeated n/2 times to obtain n-fold symmetric PQC patterns and then the sample was developed. The diffraction patterns of the fabricated PQC template were observed using a 632.8-nm HeNe laser. The fabricated PQCs exhibited 8, 10 and 12-fold rotational symmetry, which was in a good agreement with the interference simulation results. In addition, the diffraction patterns with n-rotation symmetry were observed for the corresponding n-fold PQCs. We believe that the multiple-exposure holography is a good method to fabricate the mesoscale PQCs with a high rotational symmetry.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.10a
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• pp.698-701
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• 2005

We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

• Journal of Sensor Science and Technology
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• v.28 no.4
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• pp.251-255
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• 2019

We propose a two-step lithography process to minimize edge-bead issues caused by thick photoresist (PR) coating. In the conventional PR process, the edge bead can be efficiently removed by applying an edge-bead removal (EBR) process while rotating the silicon wafer at a high speed. However, applying conventional EBR to the production of desired PR mold with unique negative patterns cannot be used because a lower rpm of spin coating and a lower temperature in the soft bake process are required. To overcome this problem, a two-step lithography process was developed in this study and applied to the fabrication of a polydimethylsiloxane (PDMS) film having super-hydrophobic characteristics. Following UV exposure with a first photomask, the exposed part of the silicon wafer was selectively removed by applying a PR developer while rotating at a low rpm. Then, unique PR mold structures were prepared by employing an additional under-exposure process with a second mask, and the mold patterns were transferred to the PDMS. Results showed that the fabricated PDMS film based on the two-step lithography process reduced the height difference from 23% to 5%. In addition, the water contact angle was greatly improved by spraying of hydrophobic nanosilica on the dual-scaled PDMS surface.