• Journal of Information Display
• /
• v.2 no.1
• /
• pp.38-42
• /
• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Journal of Magnetics
• /
• v.10 no.4
• /
• pp.163-170
• /
• 2005

The RF integrated noise filters are fabricated by photolithography. The stack for the electromagnetic noise filters consists of the nano-granular ($Co_{41}Fe_{38}AI_{13}O_8$) soft magnetic film / $SiO_2$ / Cu transmission line / seed layer (Cu/Ti) / $SiO_2$-substrate. A good signal-attenuation feature along with a low signal-reflection feature is observed in the present filters. Especially in the noise filter incorporated with a $Co_{41}Fe_{38}AI_{13}O_8$ magnetic film with lateral dimensions of $2000{\mu}m$ wide, 15 mm long and $1{\mu}m$ thick, the maximum magnitude of signal attenuation reaches -55 dB, and the magnitude of signal reflection is below -10 dB in the overall frequency range. And this level of signal attenuation is much larger than that of a noise filter incorporated with a Fe magnetic film.

• Journal of Surface Science and Engineering
• /
• v.53 no.5
• /
• pp.257-264
• /
• 2020

Anodization of Fe and Fe alloys is one of the most promising techniques to obtain iron oxide films applying to the various electrochemical devices due to their electrochemical catalytic properties. In this study, we investigate on the preparation of anodic iron oxide composite incorporated with WO₃ through a single-step anodization of stainless steel type-304 (STS304) as a substrate. The effects of applied voltage and tungsten precursor on the structural characteristics of iron oxide composite with different amount of incorporated WO₃ were observed. It is demonstrated that when the voltage of 60 V applied with 20 mM of Na₂WO₄ as a precursor, anodic iron oxide composite with a large pore diameter and a thick oxide length in which WO₃ is uniformly incorporated is obtained.

• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1432-1433
• /
• 2006

$Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were fabrication by sol-gel method. Sintering temperature must be suited to the LTCC technology. Structure and dielectric properties were investigated for effect of $Li_{2}CO_3$ dopants at BST. Structure of $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics were dense and homogeneous with almost no pore. Relative permittivity was decreased and dielectric loss was increased with increasing $Li_{2}CO_3$ doping rations. In the case of the 3wt% $Li_{2}CO_3$ doped $Ba_{0.5}Sr_{0.5}TiO_3$ ceramics sintered at $900^{\circ}C$, relative permittivity and dielectric loss were 907 and 0.003 at 100 kHz.

• Journal of Surface Science and Engineering
• /
• v.43 no.2
• /
• pp.47-50
• /
• 2010

This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.296-297
• /
• 2007

PMN-PZT 단층 및 다층 후막을 알루미나 기판위에 켄티레버 형태로 제작하여, 외부의 미소 진동에 의한 마이크로 발전 특성을 고찰하였다. 미소 변위에 의한 마이크로 발전 특성은 켄티레버의 무게(load), 진동수, 켄티레버의 길이 등에 밀접한 영향을 미치므로 이에 준한 요소를 고려하여 여러 가지 변수로 실험하였다. 연구 결과 서로 다른 소재의 기판과 발전체의 계면 분리 현상, 전극과 발전체의 분리 현상, 소결 온도 등이 소재 측면의 문제점으로 크게 대두되었으며, $5{\times}20mm$ 기판위에 형성된 발전체의 특성은 $1.1k{\Omega}{\sim}1M{\Omega}$의 부하에 따른 전압변동이 0.01V에서 3.6V로 큰 차이가 났다. 켄티레버의 로드의 변화에 대한 피크 전압은 $1.9{\sim}{\pm}2.8V$로 조사되었으며, 출력은 $0.45{\sim}4{\mu}W$로 측정되었다. 그러나 이런 외부 조건 보다 압전체의 공진 특성과 진동수는 가장 중요한 요인으로 나타났으며, 몇몇 문제가 해결될 경우 마이크로 발전소자로의 활용 가능성이 있는 것으로 조사되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2005.07a
• /
• pp.187-188
• /
• 2005

The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AlN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) GaN layer. X-ray diffraction and photoluminescence measurements are used to determine the effect of AlN thickness on the strain in the subsequent GaN layers. Strong band edge photoluminescence of GaN on Si(111) was observed with a full width at half maximum of the bound exciton line as low as 17meV at 13K.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.111-111
• /
• 2010

최근 전자 소자의 집적기술은 기존의 2차원에서 System on package (SOP) 개념에 기반을 둔 3차원 집적 기술로 발전 되어가고 있다. 소자의 3차원 실장을 실현시키는 과정에서 세라믹의 여러 유용성이 언급되어져 왔지만, 취성이 매우 크다는 등의 단점이 있었다. 이러한 이유로 연성을 가지는 폴리머와 세라믹을 합성한 복합체 기판에 대하여 많은 연구가 되고 있다. 그러나 세라믹 제작을 위해서는 높은 공정온도가 요구되고 있고 이러한 높은 공정상에서의 온도는 3차원 실장에 있어서 문제점이 되고 있다. 이러한 문제점을 극복하기 위하여 상온에서 치밀한 세라믹 후막을 제작할 수 있는 공정인 Aerosol Deposition Method (ADM)방법으로 세라믹-폴리머 후막의 제조를 시도하였다. 일반적으로 ADM은 수백 나노의 출발 파우더를 사용하여 치밀한 세라믹 막을 형성하는데 사용된다. 본 연구에서는 ADM으로 100 nm미만의 나노 세라믹 파우더를 사용하여 다공성의 세라믹 후막을 제조한 후 resin을 함침시키는 방법으로 세라믹-폴리머 후막의 제조를 시도하였다. 그 결과 운송가스, aerosol 농도 등의 공정조건을 변화시켜 다공성의 $Al_2O_3$ 후막을 제조하였고, 이 다공성 후막은 반투명의 특성을 보이며 고충전율로 형성되었다. 이렇게 제조된 나노 다공성 $Al_2O_3$ 후막에 cyanate ester resin을 함침시키는 방법을 사용하여 $Al_2O_3$-cyanate ester 복합체 후막을 제조하였으며, 이의 비유전율 및 품질계수는 각각 1 MHz에서 6.7, 1000으로 우수한 유전특성을 보임이 확인되었다.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.1
• /
• pp.85-90
• /
• 2006

In this study, measurement of thermal conductivity of multilayer thin dielectric film has been conducted via differential $3\omega$ method. Also, verification of differential $3\omega$ method has been accomplished with various proposed criteria. The target film for the measurement is 300 nm thick silicon dioxide which is covered with upper protective layer of various thicknesses. The upper protective layer is inserted between the target film and the heater line for purpose of electrical insulator or anti-oxidation barrier since the target film may be a good electrical conductor or a well-oxidizing material. Since the verification of differential $3\omega$ method has not been conducted yet, we have shown that the measurement of thermal conductivity of thin films with upper protective layer via differential $3\omega$ method is verified to be reliable as long as the proposed preconditions of the samples are satisfied. Experimental results show that the experimental errors tend to increase with aspect ratio between thickness of the upper protective layer and width of the heater line due to heat spreading effect.

• Korean Journal of Metals and Materials
• /
• v.50 no.8
• /
• pp.557-562
• /
• 2012

Self-organized ruthenium (Ru) dots were fabricated by $400^{\circ}C$ RTA (rapid thermal annealing) and ALD (atomic layer deposition). The dots were produced under the $400^{\circ}C$ RTA conditions for 10, 30 and 60 seconds on all Si(100)/200 nm-SiO2, glass, and glass/fluorine-doped tin oxide (FTO) substrates. Electrical sheet resistance, and surface microstructure were examined using a 4-point probe and FE-SEM (field emission scanning electron microscopy). Ru dots were observed when a 30 nm-Ru layer on a Si(100)/200 nm-SiO2 substrate was annealed for 10, 30 and 60 seconds, whereas the dots were only observed on a glass substrate when a 50 nm-Ru layer was annealed on glass. For a glass/FTO substrate, RTA <30 seconds was needed for 30 nm Ru thick films. Those dots can increase the effective surface area for silicon and glass substrates by up to 5-44%, and by 300% for the FTO substrate with a < $20^{\circ}$ wetting angle.