Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Growth and Properties of GaN films on Si(111) by MOCVD

Si(111) 기판을 이용한 crack-free GaN 박막 성장과 PL특성

  • Kim, Deok-Kyu (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Jin, Hu-Jie (Wonkwang Univ. School of Electrical Electronic and Information Engineering) ;
  • Song, Min-Jong (Kwangju Health College) ;
  • Park, Choon-Bae (Wonkwang Univ. School of Electrical Electronic and Information Engineering)
  • 김덕규 (원광대학교 전기전자 및 정보공학부) ;
  • 김호걸 (원광대학교 전기전자 및 정보공학부) ;
  • 송민종 (광주보건대학 의공과) ;
  • 박춘배 (원광대학교 전기전자 및 정보공학부)
  • Published : 2005.07.07
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Abstract

The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AlN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) GaN layer. X-ray diffraction and photoluminescence measurements are used to determine the effect of AlN thickness on the strain in the subsequent GaN layers. Strong band edge photoluminescence of GaN on Si(111) was observed with a full width at half maximum of the bound exciton line as low as 17meV at 13K.

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