• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.25-29
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• 2020

This study demonstrates direct-patternable amorphous TiO_x resistive switching (RS) device and the fabrication method using photochemical metal-organic deposition (PMOD). For making photosensitive stock solutions, Ti(IV) 2-ethylhexanoate was used as starting precursor. Photochemical reaction by UV exposure was observed and analyzed by Fourier transform infrared spectroscopy and the reaction was completed within 10 minutes. Uniformly formed 20 nm thick amorphous TiO_x film was confirmed by atomic force microscopy. Amorphous TiO_x RS device, formed as 6 × 6 ㎛ square on 4 ㎛ width electrode, showed forming-less RS behavior in ±4 V and on/off ratio ≈ 20 at 0.1 V. This result shows PMOD process could be applied for low temperature processed ReRAM device and/or low cost, flexible memory device.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.30 no.1
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• pp.52-59
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• 2008

The geometric design of an implant surface may play an important role in affecting early osseointegration. It is well known that the porous surfaced implant had much benefits for the osseointegration and the early stability of implant. However, the porous surfaced implant had weakness from the transgingival contamitants, and it resulted in alveolar bone loss. The other problem identified with porous surface implant is the loss of physical properties resulting from the bead sintering process. In this study, we developed the new bead coating implant to overcome the disadvantages of porous surfaced implant. Ti-6Al-4V beads were supplied from STARMET (USA). The beads were prepared by a plasma rotating electrode process (PREP) and had a nearly spherical shape with a diameter of 75-150 ${\mu}m$. Two types of titanium implants were supplied by KJ Meditech (Korea). One is an external hexa system (External type) and the other is an internal system with threads (Internal type). The implants were pasted with beads using polyvinylalcohol solution as a binder, and then sintered at 1250 $^{\circ}C$ for 2 hours in vacuum of $10^{-5}$ torr. The resulting porous structure was 400-500 ${\mu}m$ thick and consisted of three to four bead layers bonded to each other and the implant. The pore size was in the range of 50-150 ${\mu}m$ and the porosity was 30-40 % in volume. The aim of this study was to evaluate the osseointegration of the newly developed dental implant. The experimental implants (n=16) were inserted in the unilateral femur of 4 mongrel dogs. All animals were killed at 8 weeks after implantation, and samples were harvested for hitological examination. All bead coated porous implants were successfully osseointegrated with peripheral bone. The average bone-implant contact ratios were 84.6 % (External type) and 81.5 % (Internal type). In the modified Goldner's trichrome staining, new generated mature bones were observed at the implant interface at 8 weeks after implantation. Although, further studies are required, we could conclude that the newly developed vacuum sintered Ti-6Al-4V bead coating implant was strong enough to resist the implant insertion force, and it was easily osseointegrated with peripheral bone.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.1
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• pp.17-22
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• 2011

ZnO-based thin-film transistors (TFTs) have been fabricated and the mechanical characteristics of electric circuits, such as stress, strain, and deformation are analyzed by the finite element method (FEM). In this study, a mechanical-stability design guide for such systems is proposed; this design takes into account the stress and deformation of the bridge to estimate the stress distribution in an $SiO_2$ film with 0 to 5% stretched on 0.5-${\mu}m$-thick. The predicted buckle amplitude of $SiO_2$ bridges agrees well with experimental results within 0.5% error. The stress and strain at the contact point between bridges and a pad were measured in a previous structural analysis. These structural analysis suggest that the numerical measurement of deformation, SU-8 coating thickness for Neutral Mechanical Plane (NMP) and ITO electrode size on a dielectric layer was useful in enhancing the structural and electrical stabilities.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.23 no.1
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• pp.78-84
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• 2009

In this paper, ZnO:Al thin film was deposited on polyethylene terephthalate(PET) substrate by capacitively coupled r. f. magnetron sputtering method from a ZnO target mixed with 2wt[%] Al2O3 to investigate the possible application of ZnO:Al film as a transparent conducting electrode for film typed DSCs. The effect of substrate bias on the electrical properties and film structure were studied. The results showed that a positive bias applied to the substrate during sputtering contributed to an improvement of electrical properties of the film by attracting electrons in the plasma to bombard the growing films. These bombardments provided additional energy to the growing ZnO:Al film on the substrate, resulting in significant variations in film structure and electrical properties. Electrical resistivity of the film decreases significantly as the positive bias increases up to +30[V] However, as the positive bias increases over +30[V], the resistivity decreases. The transmittance varies little as the substrate bias is increased from 0 to +60[V], and as r. f. powers increases from 160[W] to 240[W]. The film with electrical resistivity as low as $1.8{\times}10^{-3}[{\Omega}-cm]$ and optical transmittance of about 87.8[%] were obtained for 1,012[nm] thick film deposited with a substrate bias of +30[V].

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.33-38
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• 2001

We investigate the via-size dependance of as-electroplated- and reflow-bump shapes for realizing both high-density and high-aspect ratio of solder bump. The solder bump is fabricated by subsequent processes as follows. After sputtering a TiW/Al electrode on a 5-inch Si-wafer, a thick photoresist for via formation it obtained by multiple-codling method and then vias with various diameters are defined by a conventional photolithography technique using a contact alinger with an I-line source. After via formation the under ball metallurgy (UBM) structure with Ti-adhesion and Cu-seed layers is sputtered on a sample. Cu-layer and Sn/pb-layer with a competition ratio of 6 to 4 are electroplated by a selective electroplating method. The reflow-bump diameters at bottom are unchanged, compared with as-electroplated diameters. As-electroplated- and reflow-bump shapes, however, depend significantly on the via size. The heights of as-electroplated and reflow bumps increase with the larger cia, while the aspect ratio of bump decreases. The nearest bumps may be touched by decreasing the bump pitch in order to obtain high-density bump. The touching between the nearest bumps occurs during the overplating procedure rather than the reflowing procedure because the mushroom diameter formed by overplating is larger than the reflow-bump diameter. The arrangement as zig-zag rows can be effective for realizing the flip-chip-interconnect bump with both high-density and high-aspect ratio.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.8-14
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• 2007

In this paper, $HfO_2$/Hf stacked film has been applied as the gate dielectric in MOS devices. The $HfO_2$ thin film was deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$ as precursors. Prior to the deposition of the $HfO_2$ film, a thin Hf metal layer was deposited as an intermediate layer. Round-type MOS capacitors have been fabricated on Si substrates with 2000${\AA}$-thick Al or Pt top electrode. The prepared film showed the stoichiometric components. At the $HfO_2$/Si interface, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. It seems that the intermediate Hf metal layer has a benefit for the enhancement of electric characteristics of gate dielectric in $HfO_2$/Si structure.

• Composites Research
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• v.23 no.3
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• pp.31-36
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• 2010

A new material, carbon-nanofiber/polypyrrole (CNF/PPy) composite films, with different CNF weight ratios were fabricated electrochemically. Compared to the fabrication process based on simple physical mixing, the flexibility of the new film has been improved much better than the previous similar material. Pure PPy films were also fabricated by the new electrochemical process for the comparison of difference. Several SEM images were taken at two locations (electrode-side and solution-side) and at the cross section of the samples. Electrical conductivity of the composite films was measured by the four-probe method. The conductivity of the pure PPy film 0.013cm thick was 79.33S/cm. The CNF/PPy composite film with 5% CNF showed a conductivity of 93S/cm. One with 10% CNF showed a conductivity of 126 S/cm. The conductivity of PPy improves, as the CNF weight ratio increases. The good conductivity of CNF/PPy composites makes them a candidate for a small bending actuator. A bending sensor consists of PPy and PVDF, which can be operated in the air, was designed and the bending deflection was calculated using FEM.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.4
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• pp.2037-2042
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• 2013

A TCO-less palladium (Pd) catalytic layer on the glass substrate was assessed as the counter electrode (CE) in a dye sensitized solar cell (DSSC) to confirm the stability of Pd with the $I^-/I_3{^-}$electrolyte on the DSSC performance. A 90nm-thick Pd film was deposited by a thermal evaporator. Finally, DSSC devices of $0.45cm^2$ with glass/FTO/blocking layer/$TiO_2$/dye/electrolyte(10 mM LiI + 1 mM $I_2$ + 0.1 M $LiClO_4$ in acetonitrile solution)/Pd/glass structure was prepared. We investigated the microstructure and photovoltaic property at 1 and 12 hours after the sample preparation. The optical microscopy, field emission scanning electron microscopy (FESEM), cyclic voltammetry measurement (C-V), and current voltage (I-V) were employed to measure the microstructure and photovoltaic property evolution. Microstructure analysis showed that the corrosion by reaction between the Pd layer and the electrolyte occurred as time went by, which led the decrease of the catalytic activity and the efficiency. I-V result revealed that the energy conversion efficiency after 1 and 12 hours was 0.34% and 0.15%, respectively. Our results implied that we might employ the other non-$I^-/I_3{^-}$electrolyte or the other catalytic metal layers to guarantee the long term stability of the DSSC devices.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.33-42
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• 2009

A polymer-based flexible neural probe was fabricated for monitoring of neural activities from a brain. To improve the insertion stiffness, a 5 ${\mu}m$ thick biocompatible Au layer was electroplated between the top and bottom polymer layers. The developed neural probe penetrated a gel whose elastic modulus is similar to that of a live brain tissue without any fracture, To minimize mechanical residual stress and bending from the probe, two new methods were employed: (1) use of a thermal annealing process after completing the device and (2) incorporation of multiple different layers to compensate the residual stress between top and bottom layers. Mechanical bending around the probe tip was clearly removed after employing the two processes. In electrical test, the developed probe showed a proper impedance value to record neural signals from a brain and the result remained the same for 72 hours. In simple in-vitro probe characterization, the probe showed a great removal of residual stress and an excellent recording performance. The in-vitro recording results did not change even after 1 week, suggesting that this electrode has the potential for great recording from neuron firing and long-term implant performance.