• 전자공학회논문지 IE
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• v.44 no.1
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• pp.6-9
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• 2007

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress Si3N4 membranes with $l.2{\mu}m-thickness$ using MEMS technology. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers $(16\sim48)$, thermocouple line widths $(10{\mu}m-25{\mu}m)$, thermocouple lengths $(100{\mu}m-500{\mu}m)$, membrane areas $(12mm2\sim2.52mm2)$ and junction areas $(150{\mu}m2\sim750{\mu}m2)$, respectively. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.265-266
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• 2006

It was well known that thermopile was quiet a competent sensor using to probe the temperature of "hot point" where the temperature can be off the temperature-limitation for normal operation of the main electrical power equipment. In the present work, we aimed for developing new Ge-thermopile materials which can be using a non-contact temperature sensors at various hot-point of the power equipment and evaluation of its output property. As a results of the present works, a new thermopile which were composed Ga-poded p-type and Sb-doped n-type in Ge-semiconductor were designed and manufactured by MBE(Molecular Beam Epitaxy) process and showed superior sensitivity at room temperature.

• Journal of Sensor Science and Technology
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• v.11 no.1
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• pp.1-8
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• 2002

In this paper, a thermopile which is applied to wide uses of temperature measuring was fabricated and its characteristic was improved by appling SOI structure to the fabrication. We improved characteristic of the thermopile by using single crystal silicon strips that has high seebeck coefficient and dielectric isolating the silicon strips from substrate with silicon dioxide film which dramatically decrease thermal conductivity between hot and cold junction compared to a silicon strip which was fabricated by ion implantation. The thermopile consists of 17 p-type single crystal silicon strips and 17 n-types by serial connection. The result of electromotive force measuring showed very good characteristic as 130mV/K when temperature difference between the two ends of the thermopile occurs by applying light on the thermopile fabricated with silicon strips of $1600{\mu}m$ length, $40{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.5
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• pp.1-5
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• 1972

In order to improve the response time of nelltron theromopile for reactor control a neutron thermopile made use of a vacuunl evaporated thin film thor mocouple was fablicated and tested. The test results were compared with a wire-type neutron thermopile. Good linearities between the response of the neutron thermopile and the thermal flux has been shown in the ranges from n/$\textrm{cm}^2$/sec. Thermal neutron flux distributions in the core of TRIGA Mark-II reactor were measured using the fabricated neutron thermopile, and the results were conpared with data obtained by the acrivatin foil measurement.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.369-373
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• 2013

In this paper, we developed contact type temperature sensor with single crystal silicon strip thermopile. This sensor consists of 15 p-type single crystal silicon strips, 17 n-types and contact electrodes on silicon dioxide silicon membrane. The result of electromotive force measuring showed very good characteristic as $15.18mV/^{\circ}C$ when temperature difference between the two ends of the thermopile occurs by applying thermal contact on the thermopile which was fabricated with silicon strip of $200{\mu}m$ length, $20{\mu}m$ width, $1{\mu}m$ thickness.

• Journal of Sensor Science and Technology
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• v.11 no.5
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• pp.294-300
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• 2002

In this study, we fabricated thermopile infrared sensor with floating membrane structure. Floating membrane was formed by SOI(Silicon On Insulator) structure. In SOI structure, silicon dioxide layer between top silicon layer and bottom silicon substrate was etched by HF solution, then membrane was floated over substrate. After membrane was floated, thermopile pattern was formed on membrane. By insertion of SOI technology, we could obtain thermal isolation structure easily and passivation process for sensor pattern protection was not required during fabrication process. Then, the amplifier circuit for thermopile sensor was fabricated by using $1.5{\mu}m$ CMOS process. The voltage gain of fabricated amplifier was about two hundred.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.4
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• pp.70-76
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• 1994

A humidity sensing device based on a new humidity sensing principle is designed and fabricated in this study. The silicon thermopile is consisted of 25 couples of p-type diffused layer/Al strips. The internal resistance and the Seebeck coefficient are 300kl and 537$\mu$V/K, respectively Fabricated sensors showed linear response characteristics proportional to relative humidity changes with a sensitivity of 9$\mu$V/%RH in the range from 20% to 90%.

• Proceedings of the Korea Society for Simulation Conference
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• 2001.10a
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• pp.387-390
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• 2001

Thermopile thermometer can measure the temperature of an object without attaching the object. It measures the temperature by receiving the radiation energy from objects. The idea of this is from the law of Stefan-Boltzmann. In the past it was not used well because the size was big and the cost was too expensive. But, In these days it can be used many field because the size become smaller and advantage of cost by using micro machine technology. However, The accuracy of measuring is not better than electric type. So we want to improve the accuracy of sensor by analyzing the heat transfer of the thermopile. To analyze temperature distribution in the thermopile sensor, we use the FEM software which is named ANSYS. The conduction and radiation heat transfer is considered to simulate the temperature distribution and time response inside of the sensor.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.781-784
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• 2005

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress $Si_3N_4$ membranes with $1.2{\mu}m-thickness$ using MEMS technology. Poly-Si thin film with thickness of 3500 ${\AA}$ as the first thermocouple material, was deposited by LPCVD method. And aluminum thin film with thickness of 6000 ${\AA}$ as the second thermocouple material, was deposited by sputtering method. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers (16 ${\sim}$ 48), thermocouple line widths (10 ${\mu}m$ ${\sim}$ 25 ${\mu}m$), thermocouple lengths (100 ${\mu}m$ ${\sim}$ 500 ${\mu}m$), membrane areas ($1^2\;mm^2$ ${\sim}$ $2.5^2\;mm^2$) and junction areas (150 ${\mu}m^2$ ${\sim}$ 750 ${\mu}m^2$), respectively. Electromotive forces of fabricated thermopile were measured 1.1 mV ${\sim}$ 7.4 mV at $400^{\circ}C$. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.627-628
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• 2013