• Korean Journal of Materials Research
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• 제16권7호
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• pp.412-415
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• 2006

Te-doped $CoSb_3$ was prepared by the encapsulated induction melting, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by the subsequent annealing at 773 K for 24 hrs. Tellurium atoms acted as electron donors by substituting antimony atoms. Thermoelectric properties were remarkably improved by the appropriate doping. Dimensionless figure of merit was obtained to be 0.83 at 700K for the $CoSb_{2.8}Te_{0.2}$ specimen.

• Korean Journal of Materials Research
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• 제16권6호
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• pp.382-385
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• 2006

Ni-doped $CoSb_3$ was prepared by the hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase ${\delta}-CoSb_3$ was successfully obtained by encapsulated induction melting and the subsequent heat treatment at 773 K for 24 hrs, followed by the hot pressing under 60 MPa at 773 K for 2 hrs. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the Ni doping.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.688-689
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• 2006

Ni-doped $CoSb_3$ was prepared by the encapsulated induction melting and hot pressing, and its doping effects on the thermoelectric properties were investigated. Single phase $\delta-CoSb_3$ was successfully obtained by the subsequent heat treatment at 773K for 24 hours. Nickel atoms acted as electron donors by substituting cobalt atoms. Thermoelectric properties were remarkably improved by the appropriate doping.

• Journal of the Korean Ceramic Society
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• 제27권3호
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• pp.412-422
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• 1990

Porous SiC ceramics were proposed to be promising materials for high-temperature thermoelectric energy conversion. Throughthe thermoelectric property measurements and microstructure observations on the porous alpha SiC and the mixture of $\alpha$-and $\beta$-SiC, it was experimentally clarified that elimination of stacking faults and twin boundaries by grain growth is effective to increase the seebeck coefficient and increasing content of $\alpha$-SiC gives rise to lower electrical conductivity. Furthermore, the effects of additives on the thermoelectric properties of 6H-SiC ceramics were also studied. The electrical conductivity and the seebeck coefficient were measured at 35$0^{\circ}C$ to 105$0^{\circ}C$ in argon atmospehre. The thermoelectric conversion efficiency of $\alpha$-SiC ceramics was lower than that of $\beta$-SiC ceramics. The phase homogeneity would be needed to improve the seebeck coefficient and electrical conductivity decreased with increasing the content of $\alpha$-phase. In the case of B addition, XRD analysis showed that the phase transformation did not occur during sintering. On the other hand, AlN addiiton enhanced the reverse phase transformation from 6H-SiC to 4H-SiC, and this phenomenon had a great effect upon the electrical conductivity.

• Journal of Advanced Marine Engineering and Technology
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• 제36권1호
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• pp.51-56
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• 2012

This paper reports the generation efficiency and the thermal performance of a thermoelectric generator (TEG) harvesting energy from the waste heat of high power electronic components. A thermoelectric (TE) model containing thermal boundary resistances is used to predict generation efficiency and junction temperature of a high power electronic component. The predicted results are verified with measured values, and the discrepancy between prediction and measurement is seen to be moderate. The verified TE model predicts generation efficiencies, junction temperatures of the component, and temperature differences across a TEG at various source heat flows associated with various electrical load resistances. This study explores effects of the load resistance on the generation efficiency, the temperature difference across a TEG, and the junction temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제33권2호
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• pp.141-146
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• 2020

Thermoelectric Bi₂Te₃ thin films were synthesized by a co-sputtering method at 300℃. A Fe dopant was considered to enhance the thermoelectric properties of the system. The Seebeck coefficient of the Fe-doped films increased whereas the electrical conductivity decreased. As a result, the power factor of the system increased owing to the enhanced Seebeck coefficient. Grain growth inhibition was detected in the Fe-doped system, which produced more grain boundaries in the Fe-doped films than in the undoped system. The increased grain boundary scattering was deemed to be effective for a reduced thermal conductivity. This is advantageous for the preparation of high-performance thermoelectric films.

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.304.2-304.2
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• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Journal of Powder Materials
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• 제30권2호
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• pp.123-129
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• 2023

High-temperature and high-pressure post-processing applied to sintered thermoelectric materials can create nanoscale defects, thereby enhancing their thermoelectric performance. Here, we investigate the effect of hot isostatic pressing (HIP) as a post-processing treatment on the thermoelectric properties of p-type Bi_0.5Sb_1.5Te_3.0 compounds sintered via spark plasma sintering. The sample post-processed via HIP maintains its electronic transport properties despite the reduced microstructural texturing. Moreover, lattice thermal conductivity is significantly reduced owing to activated phonon scattering, which can be attributed to the nanoscale defects created during HIP, resulting in an ~18% increase in peak zT value, which reaches ~1.43 at 100℃. This study validates that HIP enhances the thermoelectric performance by controlling the thermal transport without having any detrimental effects on the electronic transport properties of thermoelectric materials.

• Journal of Powder Materials
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• 제22권4호
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• pp.254-259
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• 2015

$Bi_2Te_3$ related compounds show the best thermoelectric properties at room temperature. However, n-type $Bi_2Te_{2.7}Se_{0.3}$ showed no improvement on ZT values. To improve the thermolectric propterties of n-type $Bi_2Te_{2.7}Se_{0.3}$, this research has Cu-doped n-type powder. This study focused on effects of Cu-doping method on the thermoelectric properties of n-type materials, and evaluated the comparison between the Cu chemical and mechanical doping. The synthesized powder was manufactured by the spark plasma sintering(SPS). The thermoelectric properties of the sintered body were evaluated by measuring their Seebeck coefficient, electrical resistivity, thermal conductivity, and hall coefficient. An introduction of a small amount of Cu reduced the thermal conductivity and improved the electrical properties with Seebeck coefficient. The authors provided the optimal concentration of $Cu_{0.1}Bi_{1.99}Se_{0.3}Te_{2.7}$. A figure of merit (ZT) value of 1.22 was obtained for $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu chemical doping, which was obviously higher than those of $Cu_{0.1}Bi_{1.9}Se_{0.3}Te_{2.7}$ at 373K by Cu mechanical doping (ZT=0.56) and Cu-free $Bi_2Se_{0.3}Te_{2.7}$ (ZT=0.51).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.23-23
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• 2009

It has been challenging to increase the thermoelectric figure of merit ($ZT=S^2{\sigma}T/\kappa$) of materials, which determine the efficiency of thermoelectric devices, because the three parameters Seebeck coefficient (S), electrical conductivity ($\sigma$), and thermal conductivity ($\kappa$) of bulk materials are inter-dependent. With the development of nanotechnology, ZT values of nanostructured materials are predicted to be enhanced by classical size effects and quantum confinement effects. In particular, Bi nanowires were suggested as one of ideal thermoelectric materials due to the expected quantum confinement effects for the simultaneous increase in Sand. In this work, we have investigated the thermal conductivity of individual single crystalline Bi nanowires with d = 98 nm and d = 327 nm in the temperature range 40 - 300 K using MEMS devices. The for the Bi nanowire with d = 98 nm was observed to be ~ 1.6 W/m-K at 300 K, which is much lower than that of Bi bulk (8 W/m-K at 300 K). This indicates that the thermal conductivity of the Bi suppressed due to enhanced surface boundary scattering in one-dimensional structures. Our results suggest that Bi nanowires grown by stress-induced method can be used for high-efficiency thermoelectric devices.