• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.24.1-24.1
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• 2006

• Proceedings of the KSME Conference
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• 2007.05b
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• pp.2079-2084
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• 2007

A small-scale thermoelectric cooling system was built in an effort to enhance the performance of the refrigeration system by utilizing the water-cooled jacket which was attached on the hot side of the thermoelectric module. Considered design parameters for the water-cooled jacket included the geometry of the flow passage inside the jacket and the flow rate of cooling water. The higher flow rate of cooling water in the jacket resulted in a better performance of the refrigeration system. The introduction of geometrical complexity of the cooling water flow passage to the cooling jacket also showed significant improvement on the performance of the thermoelectric refrigeration system such as the cooling capacity and the COP of the refrigeration system.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.29 no.8
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• pp.1-6
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• 2015

In this paper, we propose the LED(Light-Emitting-Diode) emergency lighting in a tunnel by using the thermoelectric devices. To achieve high generated power, thermoelectric device should be have high Seebeck coefficient and small contact area. Also, we reveal that a moderate heatsink required for high generated power. From the waste heat of LED tunnel lighting module (25W), the generated power was 0.062W by thermoelectric device, and it could illuminate for 1hour after charge the battery of emergency lighting during about 101hours.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.15 no.11
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• pp.889-894
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• 2003

The objectives of this study are to present a proper mathematical model for a thermoelectric cooler equipped with the spacer and to investigate the effect of its geometries by heat transfer analysis. In order to enhance the efficiency of the thermoelectric cooler, the spacer is inserted between TEM (thermoelectric module) and cold plate. The theoretical results show that the COP (coefficient of performance) increases nonlinearly as high as 0.63 with increasing the depth of spacer and the depth of TEM and with decreasing the area of insulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.12
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• pp.1135-1140
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• 2008

Bismuth-telluride based thin film materials are grown by Metal Organic Chemical Vapor Deposition(MOCVD). A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_2Te_3$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $4{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_2Te_3$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_2Te_3$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the sample was heated by heating block and the voltage output measured. As expected for a thermoelectric generator, the voltage decreases linearly, while the power output rises to a maximum. The highest estimated power of $1.3{\mu}W$ is obtained for the temperature difference of 45 K. we provide a promising procedure for fabricating thin film thermoelectric generators by using MOCVD grown thermoelectric materials which may have nanostructure with high thermoelectric properties.

• Korean Journal of Materials Research
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• v.27 no.8
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• pp.416-421
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• 2017

V-substituted $SrTiO_3$ thermoelectric oxide materials were fabricated by the conventional solid state reaction method. From X-ray diffraction pattern analysis, it can be clearly seen that almost every vanadium atom incorporated into the $SrTiO_3$ provided charge carriers. The electrical conductivity ${\sigma}$, Seebeck coefficient S, and thermal conductivity k were investigated in a high temperature regime above 1000 K. The addition of vanadium significantly reduced the thermal conductivity and enhanced the Seebeck coefficient, as well as the electrical conductivity, thus enhancing the ZT value. A maximum ZT value of 0.084 at 673 K was observed for the sample with 1.0 mole% of vanadium substitution. In this study, the reason for the enhanced thermoelectric properties via vanadium addition was also investigated.

• Applied Microscopy
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• v.47 no.3
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• pp.105-109
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• 2017

The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

• Journal of Ceramic Processing Research
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• v.20 no.6
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• pp.582-588
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• 2019

FeVSb1-xTex (0.02 ≤ x ≤ 0.10) half-Heusler alloys were fabricated by mechanical alloying process and subsequent vacuum hot pressing. Near single half-Heusler phases are formed in vacuum hot pressed samples but a second phase of FeSb2 couldn't be avoided. After doping, the lattice thermal conductivity in the system was shown to decrease with increasing Te concentration and with increasing temperature. The lowest thermal conductivity was achieved for FeVSb0.94Te0.06 sample at about 657 K. This considerable reduction of thermal conductivities is attributed to the increased phonon scattering enhanced by defect structure, which is formed by doping of Te at Sb site. The phonon scattering might also increase at grain boundaries due to the formation of fine grain structure. The Seebeck coefficient increased considerably as well, consequently optimizing the thermoelectric figure of merit to a peak value of ~0.24 for FeVSb0.94Te0.06. Thermoelectric properties of various Te concentrations were investigated in the temperature range of around 300~973 K.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.292-296
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• 2006

Effects of rapid thermal annealing of bismuth telluride thin films on their thermoelectric properties were investigated. Films with four different compositions were elaborated by co-sputtering of Bi and Te targets. Rapid thermal treatments in range of $300{\sim}400^{\circ}C$ were carried out during 10 minutes under the reducing atmosphere (Ar with 10% $H_2$). As the temperature of thermal treatment increased, carrier concentrations of films decreased while their mobilities increased. These changes were clearly observed for the films close to the stoichiometric composition. Rapid thermal treatment was found to be effective in improving the thermoelectric properties of $Bi_2Te_3$ films. Recrystallization of $Bi_2Te_3$ phase has caused the enhancement of thermoelectric properties, along with the decrease of the carrier concentration. Maximum values of Seebeck coefficient and power factor were obtained for the films treated at $400^{\circ}C$ (about $-128{\mu}V/K$ and $9{\times}10^{-4}\;W/K^2m$, respectively). With further higher temperature ($500^{\circ}C$), thermoelectric properties deteriorated due to the evaporation of Te element and subsequent disruption of film's structure.

• Journal of Powder Materials
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• v.17 no.4
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• pp.336-341
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• 2010

The present study focused on the synthesis of Bi-Sb-Te-based thermoelectric powder by an oxidereduction process. The phase structure, particle size of the synthesized powders were analyzed using XRD and SEM. The synthesized powder was sintered by the spark plasma sintering method. The thermoelectric property of the sintered body was evaluated by measuring the Seebeck coefficient and specific electric resistivity. The $Bi_{0.5}Sb_{1.5}Te_3$ powder had been synthesized by a combination of mechanical milling, calcination and reduction processes using mixture of $Bi_2O_3$, $Sb_2O_3$ and $TeO_2$ powders. The sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ powder synthesized by an oxide-reduction process showed p-type thermoelectric characteristics, even though it had lower thermoelectric properties than the sintered body of the $Bi_{0.5}Sb_{1.5}Te_3$ thermoelectric powder synthesized by the conventional melting-crushing method.