• Transactions of the Korean Society of Mechanical Engineers A
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• v.41 no.6
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• pp.443-453
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• 2017

In flip chip technology, the conventional solder bump has been replaced with a copper (Cu) pillar bump owing to its higher input/output (I/O) density, finer pitch, and higher reliability. However, Cu pillar bump technology faces several issues, such as interconnect shorting and higher low-k stress due to stiffer Cu pillar structure when the conventional reflow process is used. Therefore, the thermal compression bonding (TCB) process has been adopted in the flip chip attachment process in order to reduce the package warpage and stress. In this study, we investigated the package warpage induced during the TCB process using a numerical analysis. The warpage of the TCB process was compared with that of the reflow process.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.22 no.6
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• pp.565-572
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• 2009

This work intends to establish the reliability and fracture toughness $K_{IC}$ criterion of welded joints by EGW for high strength EH36-TMCP ultra thick plate. For this, firstly thermo elasto-plastic analysis has been carried out on two pass X-groove butt joint model to clarify the thermal and mechanical behaviour(residual stress, plastic strain, magnitude of stress and their distribution and production mechanism). Moreover, to establish fracture criterion, analysis of fracture toughness $K_{IC}$ has been performed under the notch machined and residual stress with the load condition on EGW welded joints. A quantitative fracture criterion for EGW welded joints is suggested by using $K_{IC}$.

• Korean Journal of Materials Research
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• v.18 no.4
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• pp.204-210
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• 2008

$1.5\;{\mu}m$-thick copper films deposited on silicon wafers were successfully bonded at $415^{\circ}C$/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than $10.4\;J/m^2$ as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than $300^{\circ}C$ had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over $400^{\circ}C$. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

• Journal of the Society of Naval Architects of Korea
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• v.58 no.1
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• pp.17-23
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• 2021

The membrane-type Liquefied Natural Gas (LNG) cargo tank is equipped with a double barrier to seal the LNG, of which the secondary barrier serves to prevent LNG leakage and mainly uses fiber-reinforced composite materials. However, the composite materials have thermal expansion anisotropy, which deteriorates shape distortion and mechanical performance due to repeated thermal loads caused by temperature changes between cryogenic and ambient during the unloading of LNG. Therefore, in this study, the longitudinal thermal expansion characteristics of the composite materials were obtained using a vertical thermo-mechanical analyzer, and the elastic modulus was obtained through the tensile test for each temperature to perform thermal load analysis for each direction. This is considered that it is useful to secure reliability from the viewpoint of the design of materials for a LNG cargo hold.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.10
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• pp.817-822
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• 2017

The braking system is one of the most important components in vehicles and machines. It must exert a reliable braking force when they are brought to a halt. Generally, frictional heat is generated by converting kinetic energy into heat energy through friction. As the kinetic energy is converted into heat energy, high temperature heat is generated which affects the mechanical behavior of the braking system. Frictional heat affects the thermal expansion and friction coefficient of the brake system. If the temperature is not controlled, the brake performance will be decreased. Therefore, it is important to predict and control the heat generation of the brake. Various numerical analysis studies have been carried out to predict the frictional heat, but they assumed the existence of boundary conditions in the numerical analysis to simulate the frictional heat, because the simulation of frictional heat is difficult and time consuming. The results were based on the assumption that the frictional heat is different from the actual temperature distribution in a rotating brake system. Therefore, the reliability of the cooling effect or thermal stress using the results of these studies is insufficient. In order to overcome these limitations and establish a simulation procedure to predict the frictional heat, this study directly simulates the frictional heat generation by using a thermal-structure coupling element. In this study, we analyzed the thermo-mechanical behavior of a brake model, in order to investigate the thermal characteristics of brake systems by using the Finite Element method (FEM). This study suggests the necessity to directly simulate the frictional heating and it is hoped that it can provide the necessary information for simulations.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.1
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• pp.69-73
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• 2010

Finite-element analyses were conducted to investigate the thermal stress in 3-dimensional stacked wafers package containing through-silicon-via (TSV), which is being widely used for 3-Dimensional integration. With finite element method (FEM), thermal stress was analyzed with the variation of TSV diameter, bonding diameter, pitch and TSV height. It was revealed that the maximum von Mises stresses occurred at the edge of top interface between Cu TSV and Si and the Si to Si bonding site. As TSV diameter increased, the von Mises stress at the edge of TSV increased. As bonding diameter increased, the von Mises stress at Si to Si bonding site increased. As pitch increased, the von Mises stress at Si to Si bonding site increased. The TSV height did not affect the von Mises stress. Therefore, it is expected that smaller Cu TSV diameter and pitch will ensure mechanical reliability because of the smaller chance of plastic deformation and crack initiation.

• Korean Chemical Engineering Research
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• v.46 no.2
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• pp.402-407
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• 2008

Recent popularity in mobile electronics requires higher standard on the mechanical strength of electronic packaging. Thus, the method of soldering between chip and substrate in electronic packaging process is changing from conventional method using intermetallic compound to a new method using organic solderability preservative (OSP) in order to improve the stability and the reliability of final product. Since current organic solder preservatives have several serious problems like thermo-stability during packaging process, however, it is necessary to develop new OSPs having thermo-stability. The main purpose of this study is to investigate the effect of MeOH/IPA (Isopropyl alcohol) ratio on the fluxing of a new OSP, developed in previous research, andto find out an optimum formulation of flux components for the application of the OSP in current packaging process. As a result of this study, it was revealed that higher MeOH/IPA ratio in flux showed better performance of fluxing a new OSP.

• Journal of the Microelectronics and Packaging Society
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• v.24 no.1
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• pp.103-111
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• 2017

In this study, the thermomechanical stress and fatigue analysis of a high voltage and high current (3,300 V/1200 A) insulated gate bipolar transistor (IGBT) module used for electric locomotive applications were performed under thermal cycling condition. Especially, the reliability of the copper wire and the ribbon wire were compared with that of the conventional aluminum wire. The copper wire showed three times higher stress than the aluminum wire. The ribbon type wire showed a higher stress than the circular type wire, and the copper ribbon wire showed the highest stress. The fatigue analysis results of the chip solder connecting the chip and the direct bond copper (DBC) indicated that the crack of the solder mainly occurred at the outer edge of the solder. In case of the circular wire, cracking of the solder occurred at 35,000 thermal cycles, and the crack area in the copper wire was larger than that of the aluminum wire. On the other hand, when the ribbon wire was used, the crack area was smaller than that of the circular wire. In case of the solder existing between DBC and base plate, the crack growth rate was similar regardless of the material and shape of the wire. However, cracking occurred earlier than chip solder, and more than half of the solder was failed at 40,000 cycles. Therefore, it is expected that the reliability of the solder between DBC and base plate would be worse than the chip solder.