• Fibers and Polymers
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• v.1 no.2
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• pp.83-91
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• 2000

Thermotropic liquid crystalline polymer made up of poly(p-hydroxybenzoate) (PHB)-poly(ethylene terephthalate)(PET) 8/2 copolyester, poly(ethylene 2,6-naphthalate) (PEN) and PET were mechanically blended to pursue the liquid crystalline phase of ternary blends. Complex viscosities of blends decreased with increasing temperature and PHB content. DSC thermal analysis indicated that glass transition temperature (Tg) and melting temperature (Tm) of blends increased with increasing PHB content. Both tensile strength and initial modulus increased with raising PHB content and take-up speed of monofilaments. In the WAXS diagram, only PEN crystal reflection at 2Θ=$15.5^{\circ}C$ appeared but PET crystal reflection was not shown in all compositions. The degree of transesterification and randomness of blends increased with blending time but sequential length of both PEN and PET segment decreased.

• Composites Research
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• v.26 no.2
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• pp.123-128
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• 2013

The PVDF (polyvinylidene fluoride) fibers were prepared using the wet spinning processing. To improve ${\beta}$-phase crystalline which closely related piezoelectric property PVDF wet spun fibers conducted post treatment. Post treatment is consisted of heat stretching and annealing process. The heat stretching and annealing conditions were controlled by changing temperature between glass transition temperature and melting temperature. From these experimental data, the resulting crystal structure of the ${\beta}$-phase crystalline was confirmed by FT-IR and XRD experiments. From these analysis results, optimum stretching and annealing conditions of the wet spun PVDF fibers were founded to increase high ${\beta}$-phase crystalline. Furthermore results showed that thermal processing had a direct effect on modifying the crystalline microstructure and also confirmed that heat stretching and annealing could increase the degree of crystallinity and ${\beta}$-phase crystalline. Finally, piezoelectric constant ($d_{11}$) of the post heat treated PVDF fibers reinforced composite were measured to investigate the feasibility for the sensing materials.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.109-110
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• 2006

In bio applications, high temperature coefficient of resistance (TCR) at $30^{\circ}C{\sim}40^{\circ}C$ is especially important for a temperature sensor. In this work, single phase-vanadium dioxide ($VO_2$) thin films for temperature sensor were fabricated by reactive DC magnetron sputtering and post-annealing method. VOx thin films deposited by reactive sputtering in a controlled $Ar/O_2$ atmosphere can be transformed into single phase-$VO_2$ films by post-annealing in $N_2$ atmosphere. The grown $VO_2$ thin films have a moderate resistance at room temperature and very high TCR at room temperature and transition temperature, respectively 2.88%/K and 15.8%/K. A detailed structural characterization is performed by SEM, XRD and RBS. SEM morphology image indicates that grains of fabricated $VO_2$films are homogeneous and ball-like in shape. A fact that the films contain only single phase-$VO_2$ is obtained by XRD and RBS analysis. After deposition, the sensors were fabricated by micromachining technology. Silicon nitride membrane and black nickel were used for a thermal isolation structure and absorption layer. In the vicinity of room temperature, the TCR of sensors was enough high to apply for bio sensors.

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.312-317
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• 2006

Binary skutterudite $CoSb_3$ compounds were prepared by the encapsulated induction melting (EIM) process, and their thermoelectric, microstructural and mechanical properties were examined. Single-phase ${\delta}-CoSb_3$ was successfully produced by the EIM and subsequent heat treatment at 773 K-873 K for 24 hours in vacuum. Seebeck coefficient increased with increasing heat treatment temperature up to 673 K, showing the positive signs in the range of measuring temperature. However, the samples heat-treated at 773 K-873 K showed negative Seebeck coefficient from room temperature to 400 K, while it showed positive signs above 400 K. Electrical resistivity decreased with increasing temperature, showing typical semiconducting conductivity. Thermal conductivity decreased drastically with increasing heat-treatment temperature. This is closely related with the phase transition to ${\delta}-CoSb_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.419-420
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• 2008

In this work, we report several experimental data capable of evaluating the phase transition characteristics of (InTe)x(GeTe)y (x = 0.1, 0.3, y =1) pseudo-binary thin films. (InTe)x(GeTe)y phase change thin films have been prepared by thermal evaporator. The crystallization characteristics of amorphous (InTe)x(GeTe)y thin films were investigated by using nano-pulse scanner with 658 nm laser diode (power : 1~17 mW, pulse duration : 10~460 ns) and XRD measurement. It was found that the crystalline speed of In-Ge-Te thin films are faster than $Ge_2Sb_2Te_5$[1] and also the crystalline temperature is higher. Changes in the optical transmittance of as-deposited and annealed films were measured using a UV-VIS-IR spectrophotometer and four-point probe was used to measure the sheeresistance of InGeTe films annealed at different temperature.

• Polymer(Korea)
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• v.25 no.2
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• pp.160-167
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• 2001

The various compositions of polyimide (PI)/polyamideimide (PAI) composites were prepared by heat treatment of the solvent cast PI precursors/PAI blends. The optical micrographs showed that a good compatibility was observed between poly(amic acid) (PAA) and PAI, but in the case of PAME/PAI mixtures, a phase separation apparently occurred due to the absence of ionic and/or H-bonding forces. Regardless of PI precursors, the similar tensile properties were observed. The tensile modulus of the composites were higher than that of the neat polyimide. The X-ray diffraction patterns of the composites showed that the chain rearrangement of PI was increased due to the plasticizing effect of PAI, which has lower glass transition temperature than that of PI, during thermal imidization process.

• Journal of the Korean Society of Safety
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• v.27 no.6
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• pp.59-63
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• 2012

The use of dry chemical powder has been increased as it can be stored for a long period and sustain in stable condition compared to gas or liquid phase extinguishing agents. A new type of dry chemical powder using Zeolite was produced in the research. Chemical powder was adsorbed into Zeolite 13X, a porous material appearing negative catalytic effect, to create extinguishing powder obtaining core shell structure and measured physical properties and run a small scale fire extinguishment. SEM, XRD, TA analysis was also executed, and extinguishing characteristics were measured by fire extinguishing experiment on oil pool fire. The experiment showed that the average particle size of Zeolite 13X was equivalent, indicating about $3{\pm}1{\mu}m$ and thermal analysis result illustrated that Zeolite 13X showed exothermic reaction peaks at $900^{\circ}C$ due to solid-state transformation. Extinguishing characteristics on oil fire of $NaHCO_3$/Zeolite 13X and $NH_4H_2PO_4$/Zeolite were improved, influenced by adsorbed extinguishing powders on Zeolite 13X and Zeolite 13X that contains high phase transition temperature.

• Korean Journal of Materials Research
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• v.22 no.9
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• pp.489-493
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• 2012

Green phosphors $K_2BaW_2O_8:Tb^{3+}$(1.0 mol%) were synthesized by solid state reaction method. Differential thermal analysis was applied to trace the reaction processes. Three endothermic values of 95, 706, and $1055^{\circ}C$ correspond to the loss of absorbed water, the release of carbon dioxide, and the beginning of the melting point, respectively. The phase purity of the powders was examined using powder X-ray diffraction(XRD). Two strong excitation bands in the wavelength region of 200-310 nm were found to be due to the ${WO_4}^{2-}$ exciton transition and the 4f-5d transition of $Tb^{3+}$ in $K_2BaW_2O_8$. The excitation spectrum presents several lines in the range of 310-380 nm; these are assigned to the 4f-4f transitions of the $Tb^{3+}$ ion. The strong emission line at around 550 nm, due to the $^5D_4{\rightarrow}^7F_5$ transition, is observed together with weak lines of the $^5D_4{\rightarrow}^7F_J$(J = 3, 4, and 6) transitions. A broad emission band peaking at 530 nm is observed at 10 K, while it disappears at room temperature. The decay times of $Tb^{3+}$ $^5D_4{\rightarrow}^7F_5$ emission are estimated to be 4.8 and 1.4 ms, respectively, at 10 and 295 K; those of the ${WO_4}^{2-}$ exciton emissions are 22 and 0.92 ${\mu}s$ at 10 and 200 K, respectively.

• Journal of Microbiology and Biotechnology
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• v.9 no.1
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• pp.70-77
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• 1999

An extremely cadmium-tolerant budding yeast, Hansenula anomala B-7 underwent a morphological switch in response to either heat shock treatment or cadmium stress, respectively. It exhibited a morphological transition from a unicellular yeast form to a pseudohyphae-like coagulation when subjected to prolonged heat shock treatment. In contrast, the yeast cells showed an irregularity in surface morphology when given thermal stress for a short time. Patterns of proteins expressed in the pseudohyphae-like cells demonstrated that several proteins were overexpressed while others were underexpressed in comparison with those prepared from the cells in the yeast form. It was a striking feature, however, that nearly 40％ of the proteins extracted from the cells in the pseudohyphae form appeared to be composed of a single polypeptide. This polypeptide was apparently overexpressed during the pseudohyphae phase and its molecular weight was estimated to be 58 kDa according to SDS-PAGE analysis. However, a significant level of the protein was not observed in the cells before transition to pseudohyphae. The architecture of the cell shape was also damaged when incubated in a medium containing more than 1,000 ppm (8.9mM) of cadmium ions, although able to proliferate at a slow rate. However, the irregularity in the cell morphology exerted either by the brief heat shock treatment or by the cadmium stress with the high concentrations of the metal ions was not repaired, even though the damaged cells were allowed to grow for sufficient time in fresh, cadmium-free medium.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.356.1-356.1
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• 2014

The Isolation of few-layered transition metal dichalcogenides has mainly been performed by mechanical and chemical exfoliation with very low yields. in particular, the two-dimensional layer of molybdenum disulfide (MoS2) has recently attracted much interest due to its direct-gap property and potential application in optoelectronics and energy harvesting. However, the synthetic approach to obtain high-quality and large-area MoS2 atomic thin layers is still rare. In this account, a controlled thermal reduction-sulfurization method is used to synthesize large-MoOx thin films are first deposited on Si/SiO2 substrates, which are then sulfurized (under vacuum) at high temperatures. Samples with different thicknesses have been analyzed by Raman spectroscopy and TEM, and their photoluminescence properties have been evaluated. We demonstrated the presence of mono-, bi-, and few-layered MoS2 on as-grown samples. It is well known that the electronic structure of these materials is very sensitive to the number of layer, ranging from indirect band gap semiconductor in the bulk phase to direct band gap semiconductor in monolayers. This synthetic approach is simple, scalable, and applicable to other transition metal dichalcogenides. Meanwhile, the obtained MoS2 films are transferable to arbitrary substrates, providing great opportunities to make layered composites by stacking various atomically thin layers.