• 제목/요약/키워드: Thermal oxide

검색결과 1,683건 처리시간 0.025초

멜라민 화합물을 이용한 산화 그래핀 도핑 및 특성 평가 (Synthesis of Nitrogen-Doped Graphene by Thermal Annealing of Graphene Oxide with Melamine Compounds)

  • 김수민;김현;김소양;한종훈
    • 한국재료학회지
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    • 제29권11호
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    • pp.677-683
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    • 2019
  • In this paper, nitrogen-doped reduced graphene oxide(rGO) is obtained by thermal annealing of nitrogen-containing compounds and graphene oxide (GO) manufactured by modified Hummers' method. We use melamine as a nitrogen-containing compound and treat GO thermally with melamine at over $800{\sim}1,000^{\circ}C$ and 1 ~ 3 hr under Ar atmosphere. The electrical conductivity of doped rGO is measured by 4-point probe method. As a result, nitrogen contents on rGO are found to be in the range of 2.5 to 12.5 at% depending on the doping conditions after thermal annealing. The main doping site on graphene oxide is changed from pyridinic-N and pyrrolinic N to the graphitic site as the heat treatment temperature increases. The electrical conductivity of doped rGO increases as the N doping content increases. As the thermal treatment time increases, the change of both total doping contents and doping sites is slight and the surface resistance is remarkably reduced, which is caused by healing effects of doped graphene oxide at high temperature.

머플러용 스테인리스강의 내식성에 미치는 열적 산화의 영향 (Effects of Thermal Oxidation on Corrosion Resistance of Stainless Steels for Muffler Materials)

  • 김동우;김희산
    • 대한금속재료학회지
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    • 제46권10호
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    • pp.652-661
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    • 2008
  • Reduction of NOx in emission gas, improvement of engine efficiency, and extension of warranty period has made demands for developing materials more corrosively resistant to the inner-muffler environments or predicting the lifetime of materials used in muffler more precisely. The corrosion inside muffler has been explained with condensate corrosion mainly though thermal oxidation experiences prior to condensate corrosion. Hence, the aim of this study is to describe how the thermal oxidation affects the corrosion of stainless steel exposed to the inner-muffler environments. Auger electron spectroscopy and electrochemical tests were employed to analyze oxide scale and to evaluate corrosion resistance, respectively. Thermal oxidation has different role of condensate corrosion depending on the temperature: inhibiting condensate corrosion below $380^{\circ}C$ and enhancing condensate corrosion above $380^{\circ}C$. The low temperature oxidation causes to form compact oxide layer functioning a barrier for penetrating condensate into a matrix. Although though thermal oxidation caused chromium-depleted layer between oxide layer and matrix, the enhancement of the condensate corrosion in high temperature oxidation resulted from corrosion-induced crevice formed by oxide scale rather than corrosion in chromium-depleted layer. It was proved by aids of anodic polarization tests and measurements of pitting corrosion potentials. By the study, the role of high temperature oxidation layer affecting the condensate corrosion of stainless steels used as muffler materials was well understood.

열성장을 통해 형성된 산화구리의 광전기화학적 특성 (Photoelectrochemical property of thermal copper oxide thin films)

  • 최용선;유정은;이기영
    • 한국표면공학회지
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    • 제55권4호
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    • pp.215-221
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    • 2022
  • In the present work, copper oxide thin films were formed by heat-treatment method with different temperatures and atmosphere, e.g., at 200 ~ 400 ℃; in air and Ar atmosphere. The morphological, electrical and optical properties of the thermally fabricated Cu oxide films were analyzed by SEM, XRD, and UV-VIS spectrometer. Thereafter, photoelectrochemical properties of the thermal copper oxide films were analyzed under solar light (AM 1.5, 100 mW/cm2). Conclusively, the highest photocurrent was obtained with Cu2O formed under the optimum annealing condition at 300 ℃ in air atmosphere. In addition, EIS results of Cu oxide formed in air atmosphere showed relatively low resistance and long electron life-time compared with Cu Oxide fabricated in Ar atmosphere at the same temperature. This is because heat-treatment in Ar atmosphere could not form Cu2O due to lack of oxygen, and thermally formed CuO at high temperature suppressed stability and conductivity of the Cu oxide.

Effect of Thermal Treatment Temperature on Lifespan of Conductive Oxide Electrode

  • Yoo, Y.R.;Chang, H.Y.;Jang, S.G.;Nam, H.S.;Kim, Y.S.
    • Corrosion Science and Technology
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    • 제6권2호
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    • pp.44-49
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    • 2007
  • Dimensionally stable anodes have been widely used to cathodically protect the metallic materials in corrosive environments including concrete structure as the insoluble anode. Lifespan of the anode for concrete construction can be determined by NACE TM0294-94 method. Lifespan of conductive oxide electrode would be affected by thermal treatment condition in the process of sol-gel coatings. This work aims to evaluate the effect of thermal treatment temperature on the lifespan of the $RuO_{2}$ electrode. $450^{\circ}C$ treated conductive oxide electrode showed the excellent properties and its lifespan was evaluated to be over 88 years in 3% NaCl, 4% NaOH, and simulated pore water. This behavior was related to the formation of $RuO_{2}$.

열피로에 의한 세라믹 코팅재의 파손 (Failure of Ceramic Coatings Subjected to Thermal Cyclings)

  • 한지원
    • 한국안전학회지
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    • 제20권2호
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    • pp.1-5
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    • 2005
  • An experimental study was conducted to develop an understanding of failure of ceramic coating when subjected to a thermal cycling. Number of cycles to failure were decreased as the coating thickness and the oxide of bond coat were increased. Using the finite element method, an analysis of stress distribution in ceramic coatings was performed. Radial compressive stress was increased in the top/bond coat interface with increasing coating thickness and oxide of bond coat.

나트륨 아지드와 금속산화물과의 혼합물에 대한 열분해 특성 (Thermal Decomposition Characteristics on Sodium Azide and Metallic Oxide Mixtures)

  • 이내우;최재욱;박광수;설수덕;왕석주
    • 한국안전학회지
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    • 제12권3호
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    • pp.106-113
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    • 1997
  • The thermal characteristics of two binary mixtures by sodium azide/manganese dioxide and ferric oxide, two ternary mixtures by sodium azide/silicon dioxide/manganese dioxide and ferric oxide were studied to obtain the basic data of gas-generating agents for air bags. The thermal reaction for all mixtures started at about $420^{\circ}C$, but the temperature at which the reaction rate reached a maximum was different with the states of samples. According to reaction results, nitrogen, nitrogen oxide and nitrogen dioxide were detected by GC-MS and so many kinds of new chemicals from sodium azide and metal oxide mixtures by XRD. NMS is considered as most stable and reasonable mixture for this types of gas-generating agents.

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초임계유체 조건에서 제조된 그래핀의 구조분석과 그래핀/에폭시 수지조성물의 열전도 특성 (Structural Characteristics of Graphene Prepared in Supercritical Fluids and Thermal Conductivity of Graphene/Epoxy Composites)

  • 오원태;최규연
    • Composites Research
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    • 제34권5호
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    • pp.277-282
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    • 2021
  • 초임계유체 조건은 별도의 환원제와 높은 열처리 공정조건 없이 산화그래핀으로부터 그래핀을 제조할 수 있다. 본 연구에서는 메탄올과 에탄올 용매의 초임계유체 조건에서 산화그래핀을 그래핀으로 변환시키는 공정을 연구하였다. 제조된 그래핀의 구조를 FE-SEM과 XRD를 사용하여 분석하였을 때, 초임계 조건에서 산화그래핀의 환원반응은 다른 변수(농도, 반응시간)보다는 용매의 변화에 더 크게 영향을 받았다. 에탄올 용매의 사용이 메탄올을 사용했을 때보다 환원반응에 더욱 좋은 결과를 보여주었다. 본 연구에서 준비된 그래핀을 20 wt%까지 에폭시수지와 혼합하여 복합수지 조성물을 제조하여, 이 조성물의 열전도특성을 분석하였다. 복합수지조성물의 열전도도는 그래핀의 함량에 비례하여 상승하였고, 에탄올 초임계 용액조건에서 제조된 그래핀이 복합수지조성물의 열전도도에 더 효과적이었다.

유한요소해석과 최적설계 기법을 활용한 증착용 산화물타겟 접합공정에서의 열 변형 최소화 연구 (Thermal displacement minimization of an oxide target for bonding process by finite element analysis and optimal design)

  • 차한영;정찬엽
    • 한국결정성장학회지
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    • 제30권5호
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    • pp.208-213
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    • 2020
  • 본 연구에서는 유한요소 해석과 PQRSM 알고리즘 기반의 최적설계 기법을 활용하여 IGZO 산화물 타겟과 구리백플레이트가 서로 접합되어 있는 타겟 모듈에서 IGZO 산화물의 열변형을 최소화할 수 있는 방법에 대해 고찰했다. 3차원 유한요소 해석 결과 고온에서 IGZO와 구리 백플레이트의 접합 이후 냉각될 때 IGZO 산화물의 열변형은 최대 0.161 mm로 예측되었다. 유한요소 해석을 연동한 최적설계기법을 적용하기 위해 타겟 모듈을 냉각할 때 사용하는 하부받침대와 상부고정대의 위치를 설계변수화하여 목적함수인 IGZO의 열변형이 최소화되도록 최적설계를 수행했고, 그 결과 IGZO 산화물의 열변형을 최대 42 % 감소시킬 수 있었다. 이는 타겟을 구성하는 주재료와 구조 변경 없이 공정 중에 사용되는 부재료의 위치 변경만으로도 산화물의 열변형을 감소시킬 수 있어 산업계에 유용할 것으로 사료된다.

$N_2{O}$가스로 재산화시킨 oxynitride막의 특성 (Properties of the oxynitride films formed by thermal reoxidation in $N_2{O}$ gas)

  • 김태형;김창일;최동진;장의구
    • E2M - 전기 전자와 첨단 소재
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    • 제7권1호
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    • pp.25-31
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    • 1994
  • Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

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급속일산화법에 의한 실리콘 산화막의 특성 (Characteristics of Silicon Oxide Films Grown by Rapid Thermal Oxidation)

  • 이귀연;양두영;이재용
    • 전자공학회논문지A
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    • 제28A권12호
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    • pp.59-64
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    • 1991
  • Thin (25-103$\AA$) SiO$_2$ films are grown using the rapid thermal oxidation processing at temperatures of 105$0^{\circ}C$-115$0^{\circ}C$ for 5-30 sec, in order to investigate the characteristics of ultra thin oxide. For measuring the thickness of oxide TEM, ellipsometry, and C-V method which is taken in the condition of small surface band bending are used and compared. When neglecting the small deviation affected by both interface state and moisture charge effect, those three methods described above give similar results. In order to examine the effect of rapid thermal annealing, part of samples are annealed in N$_2$ ambient. MOS capacitors are fabricated and the characteristics of I-V and C-V are measured. Measurements show that the activation energy of initial thickness of oxide grown during the ramp-up time is of 1.125eV and the activation energy of the oxidation rate is of 0.98eV. As oxidation temperature is increased, dielectric breakdown field E$_{BD}$ is decreased due to the increase of fixed charge density N$_f$ However, E$_{BD}$ is shown to be decreased as increasing the thickness of oxide. The increase of N$_f$ in the early stage of thermal annealing results in the decrease of E$_{BD}$.

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