• 제목/요약/키워드: Thermal oxidation method

검색결과 247건 처리시간 0.03초

Hafnium Carbide Protective Layer Coatings on Carbon/Carbon Composites Deposited with a Vacuum Plasma Spray Coating Method

  • 유희일;김호석;홍봉근;신의섭;문세연
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.237.2-237.2
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    • 2016
  • A pure hafnium-carbide (HfC) coating layer was deposited onto carbon/carbon (C.C) composites using a vacuum plasma spray system. By adopting a SiC buffer layer, we successfully integrated C.C composites with a $100-{\mu}m-thick$ protective coating layer of HfC. Compared to the conventional chemical vapor deposition process, the HfC coating process by VPS showed increased growth rate, thickness, and hardness. The growth behavior and morphology of HfC coatings were investigated by FE-SEM, EDX, and XRD. From these results, it was shown that the addition of a SiC intermediate layer provided optimal surface conditions during the VPS procedure to enhance adhesion between C.C and HfC (without delamination). The thermal ablation test results shows that the HfC coating layer perfectly protected inner C.C layer from thermal ablation and oxidation. Consequently, we expect that this ultra-high temperature ceramic coating method, and the subsequent microstructure that it creates, can be widely applied to improve the thermal shock and oxidation resistance of materials under ultra-high temperature environments.

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태양 선택흡수막의 특성 분석 (Property Analysis of Solar Selective Coatings)

  • 이길동
    • 한국태양에너지학회 논문집
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    • 제33권4호
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    • pp.31-38
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    • 2013
  • The chemical composition of the black Cr solar selective coatings electrodeposited were investigated for property analysis by using a XPS(X-ray photoelectron spectroscopy) before and after annealing in air at $300^{\circ}C{\sim}500^{\circ}C$ for 120 hours. Black Cr selective coating exposed by solar radiation for 5 months was compared with annealed sample. In addition, The Cu solar selective coatings were prepared by thermal oxidation method for low temperature application. The samples obtained were characterized by using the optical reflectance measurements by using a spectrometer. Optical properties of oxidized Cu solar coatings were solar absorptance $({\alpha}){\simeq}0.62$ and thermal emittance $({\epsilon}){\simeq}0.41(100^{\circ}C)$. In the as-prepared Cr black selective coating, the surface of the coating was found to have Cr hydroxide and Cr. The Cr hydroxide of the major component was converted to $Cr_2O_3$ or $CrO_3$ form after annealing at $500^{\circ}C$ with the desorption of water molecules. The black Cr selective coating was degraded significantly at temperature of $500^{\circ}C$. The main optical degradation modes of this coating were diffusion of Cu substrate materials.

Evaluation of Ozone for Metal Oxide Thin Film Fabrication

  • Lim, Jung-Kwan;Park, Yong-Pil;Jang, Kyung-Uk;Lee, Hee-Kab
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.675-678
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    • 2004
  • Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. An ozone condensation system is constructed for metal oxide thin film fabrication. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

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Evaluation of Ozone Concentration for the Oxide Thin Film Growth

  • 박노봉;임중관;박용필;이희갑
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.579-582
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    • 2003
  • Ozone is usually generated from oxygen gas using a silent discharge apparatus and its concentration is less then 10 mol%. Ozone is condensed by the adsorption method, which is widely used for the growth of oxidation thin films such as superconductor. Highly condensed ozone is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is most effective in the highly condensed ozone region and its method is superior to Q-mass analyzer for determining ozone concentration because of the simplicity of the method.

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초전도 박막 제작을 위한 산화 시스템의 특성( II ) (Characteristics of Oxidation System for Superconductor Thin Film( II ))

  • 안인순;박용필;임중관;장경욱;이희갑;김귀열;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.264-267
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    • 2002
  • An ozone condensation system is evaluated from the viewpoint of an ozone supplier for oxide thin film growth. Ozone is condensed by the adsorption method and its concentration is analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the concentration evaluation from dilution to highly condensed ozone. The highest ozone concentration condensed by the adsorption method is evaluated to be 97 mol%

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초전도 박막 제작을 위한 산화 시스템의 특성( I ) (Characteristics of Oxidation System for Superconductor Thin Film( I ))

  • 임중관;박용필;양동복;김정호;이희갑;박노봉
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.272-275
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    • 2002
  • An ozone condensation system is evaluated in the viewpoint of an ozone supplier for oxide thin film growth. Ozone is condensed by the adsorption and distillation method. Then their concentrations are analyzed by three methods; ultraviolet absorption, thermal decomposition and Q-mass analyzing methods. Thermal decomposition method is found to be available to the concentration evaluation from dilution to highly condensed ozone. The highest ozone concentration condensed by the adsorption method is evaluated to be 96 mol%. The ozone is supplied for a sufficiently long time to grow oxide thin films.

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Dry oxidation of Germanium through a capping layer

  • 정문화;김동준;여인환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.143.1-143.1
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    • 2016
  • Ge is a promising candidate to replace Si in MOSFET because of its superior carrier mobility, particular that of the hole. However Ge oxide is thermodynamically unstable. At elevated temperature, GeO is formed at the interface of Ge and GeO2, and its formation increases the interface defect density, degrading its device performance. In search for a method to surmount the problem, we investigated Ge oxidation through an inert capped oxide layer. For this work, we prepared low doped n-type Ge(100) wafer by removing native oxide and depositing a capping layer, and show that GeO2 interface can be successfully grown through the capping layer by thermal oxidation in a furnace. The thickness and quality of thus grown GeO2 interface was examined by ellipsometry, XPS, and AFM, along with I-V and C-V measurements performed at 100K to 300K. We will present the result of our investigation, and provide the discussion on the oxide growth rate, interface state density and electrical characteristics in comparison with other studies using the direct oxidation method.

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APS법으로 제조된 열장벽 피막과 PAS법으로 제조된 열장벽 성형체의 고온 물성에 관한 연구 (A Study on the high Temperature Properties of the Graded Thermal Barrier Coatings by APS and PAS)

  • 강현욱;권현옥;한주철;송요승;홍상희;허성강;김선화
    • 한국표면공학회지
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    • 제32권2호
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    • pp.144-156
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    • 1999
  • Thermal Barrier Coating with Functional Gradient Materials (FGM-TBC) can play an important role to protect the parts from harmful environments in high temperatures such as oxidation, corrosion, and wear and to improve the efficiency of aircraft engine by lowering the surface temperature on turbine blade. FGM-TBC can increase the life spans of product and improve the operating properties. Therfore, in this study the evaluations of mechanical and thermal properties of FGM-TBC such as fatigue, oxidation and wear-resistance at high temperatures have been conducted. The samples of both the TBC with 2, 3, 5 layers (YSZ/NiCrAlY) to be produced by Air Plasma Spray method (APS) and the bulk TBC with 6 layers to be produced by Plasma Assisted Sintering method (PAS) were used. Furthermore, residual stress, bond strength, and thermal conductivity were evaluated. The average thickness of the APS was 500$\mu\textrm{m}$ to 600$\mu\textrm{m}$ and the average thickness of the PAS was 3mm. The hardness number of the top layer of APS was 750 Hv to 810Hv and that of PAS was 950 Hv to 1440Hv. The $ZrO_2$ coating layer of APS was composed of tetragonal structure after spraying as the result of XRD analysis. As shown in the results of the high temperature wear test, the 3 layer coating of APS had the best wear resistance at $800^{\circ}C$ and the 5 layer coating of APS had the best wear resistance at $600^{\circ}C$. But, these coatings had the tendency of the low-temperature softening at $300^{\circ}C$. The main mechanism of wear was the adhesive wear and the friction coefficient of coatings was increased as increasing the test temperatures. A s results of thermal conductivity test, the ${\Delta}T$ of the APS coating was increased as number of layer and the range of thermal conductivity of the PAS was $800^{\circ}C$ to $1000^{\circ}C$.

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용제 용해형 고분자를 이용한 열화한지의 보강처리 (Strengthening Treatment of Aged Hanji with Solvent Soluble Polymers)

  • 김강재;이민형;엄태진
    • 펄프종이기술
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    • 제44권1호
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    • pp.1-9
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    • 2012
  • In this study, 5 solvent soluble polymers were treated on Hanji. Mechanical properties, morphology and oxidation index with thermal aging were measured on the aged Hanji, dewaxed Hanji and polymer treated Hanji. Synthetic polymers(such as polylactic acid, polybutylene succinate, polystyrene) treated Hanji had higher strength and thermal stability than cellulose derivatives(such as cellulose nitrate and cellulose acetate) treated Hanji. Polymer treated Hanji showed a little bit of color change. The oxidation index of PS treated Hanji did not increase with thermal aging because it did not have a carboxyl group in chemical structure. Finally, polystyrene was found to be the most efficient method for strengthening the dewaxed Hanji. The best aging safety and thermal stability were obtained at the polystyrene 3% solution.

저온 래디컬 산화법에 의한 고품질 초박막 게이트 산화막의 성장과 이를 이용한 고성능 실리콘-게르마늄 이종구조 CMOS의 제작 (High Quality Ultrathin Gate Oxides Grown by Low-Temperature Radical Induced Oxidation for High Performance SiGe Heterostructure CMOS Applications)

  • 송영주;김상훈;이내응;강진영;심규환
    • 한국전기전자재료학회논문지
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    • 제16권9호
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    • pp.765-770
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    • 2003
  • We have developed a low-temperature, and low-pressure radical induced oxidation (RIO) technology, so that high-quality ultrathin silicon dioxide layers have been effectively produced with a high reproducibility, and successfully employed to realize high performace SiGe heterostructure complementary MOSFETs (HCMOS) lot the first time. The obtained oxide layer showed comparable leakage and breakdown properties to conventional furnace gate oxides, and no hysteresis was observed during high-frequency capacitance-voltage characterization. Strained SiGe HCMOS transistors with a 2.5 nm-thick gate oxide layer grown by this method exhibited excellent device properties. These suggest that the present technique is particularly suitable for HCMOS devices requiring a fast and high-precision gate oxidation process with a low thermal budget.